Patent application number | Description | Published |
20100042671 | SERVER EMBEDDED IN DEVICE CHARGING CRADLE - A charging cradle having an embedded server, wherein the server software is a ubiquitous and integral part of the charging cradle. Additionally, the server enables monitoring of an enterprise mobile device for battery level and availability, and can push software/firmware updates to the mobile device via an integrated data connection. Furthermore, the charging cradle can distribute services to the mobile devices, reducing the overall complexity of the mobile devices. | 02-18-2010 |
20100054218 | Method and System for Detecting Broadcast Receivers and Transitioning to Selective Communications - A method and a device for detecting the presence of broadcast receivers, such as mobile communication devices, within a communication network and transitioning to selective communications to one or more of the receivers. The method including sending a broadcast query to a plurality of mobile units (“MUs”), receiving at least one response from each at least one of the MUs, each of the responses specifying whether each of the at least one MU that can receive a broadcast transmission, and indicating to a user whether any of the MUs responded to the broadcast query. Described is a further method including receiving a broadcast transmission from an MU, sending a request to the MU to conduct a private communication session, and conducting the private communication session with the MU. Described is a device including means for determining whether further devices can receive a broadcast transmission from the device, and means for transitioning from a broadcast communication session to a private communication session. | 03-04-2010 |
Patent application number | Description | Published |
20120022139 | Short Interfering Ribonucleic Acid (siRNA) for Oral Administration - Short interfering ribonucleic acid (siRNA) for oral administration, said siRNA comprising two separate RNA strands that are complementary to each other over at least 15 nucleotides, wherein each strand is 49 nucleotides or less, and wherein at least one of which strands contains at least one chemical modification. | 01-26-2012 |
20120029052 | Short Interfering Ribonucleic Acid (siRNA) for Oral Administration - Short interfering ribonucleic acid (siRNA) for oral administration, said siRNA comprising two separate RNA strands that are complementary to each other over at least 15 nucleotides, wherein each strand is 49 nucleotides or less, and wherein at least one of which strands contains at least one chemical modification. | 02-02-2012 |
20120029053 | Short Interfering Ribonucleic Acid (siRNA) for Oral Administration - Short interfering ribonucleic acid (siRNA) for oral administration, said siRNA comprising two separate RNA strands that are complementary to each other over at least 15 nucleotides, wherein each strand is 49 nucleotides or less, and wherein at least one of which strands contains at least one chemical modification. | 02-02-2012 |
Patent application number | Description | Published |
20090323043 | ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction. | 12-31-2009 |
20100321661 | METHOD FOR OPERATING AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated. | 12-23-2010 |
20120188527 | ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction. | 07-26-2012 |
20120229784 | MIRROR FOR USE IN A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS - A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror. | 09-13-2012 |
20130141707 | EUV Exposure Apparatus - A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K. | 06-06-2013 |
20130250265 | Projection Exposure Apparatus for EUV Microlithography and Method for Microlithographic Exposure - The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane. | 09-26-2013 |
20130258303 | METHOD FOR OPERATING AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated. | 10-03-2013 |