Patent application number | Description | Published |
20120018732 | INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME - Sapphire substrates are used chiefly for epitaxial growth of nitride semiconductor layers, to provide a sapphire substrate of which the shape and/or amount of warping can be controlled efficiently and precisely and of which substrate warping that occurs during layer formation can be suppressed and substrate warping behavior can be minimized, to provide nitride semiconductor layer growth bodies, nitride semiconductor devices, and nitride semiconductor bulk substrates using such substrates, and to provide a method of manufacturing these products. Reformed domain patterns are formed within a sapphire substrate and the warp shape and/or amount of warping of the sapphire substrate are controlled by means of multiphoton absorption by condensing and scanning a pulsed laser through a polished surface of the sapphire substrate. When nitride semiconductor layers are formed using sapphire substrates obtained by means of this invention, substrate warping during layer formation is suppressed and substrate warping behavior is minimized so that layer quality and uniformity are improved and the quality and yield of nitride semiconductor devices is increased. | 01-26-2012 |
20130022773 | SINGLE-CRYSTAL SUBSTRATE,SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,CRYSTALLINE FILM,METHOD FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,METHOD FOR PRODUCING CRYSTLLINE SUBSTRATE,AND METHOD FOR PRODUCING ELEMENT - Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate. | 01-24-2013 |
20130062734 | CRYSTALLINE FILM, DEVICE, AND MANUFACTURING METHODS FOR CRYSTALLINE FILM AND DEVICE - Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. And the crystalline film has a thickness of 300 μm or more and 10 mm or less and reformed region pattern is formed in an internal portion of the crystalline film. | 03-14-2013 |
20130082358 | SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD - In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate ( | 04-04-2013 |
20130161794 | INTERNALLY REFORMED SUBSTRATE FOR EPITAXIAL GROWTH, INTERNALLY REFORMED SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHODS THEREFOR - Provided are an internally reformed substrate for epitaxial growth having an arbitrary warpage shape and/or an arbitrary warpage amount, an internally reformed substrate with a multilayer film using the internally reformed substrate for epitaxial growth, a semiconductor device, a bulk semiconductor substrate, and manufacturing methods therefor. The internally reformed substrate for epitaxial growth includes: a single crystal substrate; and a heat-denatured layer formed in an internal portion of the single crystal substrate by laser irradiation to the single crystal substrate. | 06-27-2013 |
20130161797 | SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD - In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film. | 06-27-2013 |
20140217458 | METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING ELEMENT - Provided are a method of manufacturing a light-emitting element by which a light-emitting element ( | 08-07-2014 |
20150368832 | GaN SUBSTRATE, AND METHOD FOR MANUFACTURING GaN SUBSTRATE - Provided is a technology capable of simply manufacturing a GaN substrate, which is constituted by a GaN crystal having a substantially uniform dislocation density distribution, without using a complicated process, at low cost and at a high yield ratio. | 12-24-2015 |