Patent application number | Description | Published |
20110303288 | Solar Cell Structure And Composition and Method For Forming The Same - A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component. | 12-15-2011 |
20120240987 | METAMORPHIC SOLAR CELL HAVING IMPROVED CURRENT GENERATION - A semiconductor device structure having increased photogenerated current density, and increased current output is disclosed. The device includes low bandgap absorber regions that increase the range of wavelengths at which photogeneration of charge carriers takes place, and for which useful current can be collected. The low bandgap absorber regions may be strain balanced by strain-compensation regions, and the low bandgap absorber regions and strain-compensation regions may be formed from the same ternary semiconductor family. The device may be a solar cell, subcell, or other optoelectronic device with a metamorphic or lattice-mismatched base layer, for which the low bandgap absorber region improves the effective bandgap combination of subcells and current balance within the multijunction cell, for higher efficiency conversion of the solar spectrum. | 09-27-2012 |
20140076386 | GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES - Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least one layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers. | 03-20-2014 |
20140076387 | GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES - Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers. | 03-20-2014 |
20140076388 | GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES - Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers. | 03-20-2014 |
20140076389 | GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES - Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least as first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers. | 03-20-2014 |
20140076391 | GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES - Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers. | 03-20-2014 |
20140076401 | GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES - Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers. | 03-20-2014 |
20140261611 | SOLAR CELL STRUCTURES FOR IMPROVED CURRENT GENERATION AND COLLECTION - In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell. | 09-18-2014 |