Patent application number | Description | Published |
20090021444 | HIGH-IMPEDANCE SUBSTRATE - A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: | 01-22-2009 |
20100156732 | RADIO APPARATUS AND ANTENNA DEVICE INCLUDING MAGNETIC MATERIAL FOR ISOLATION - An antenna device arranged around a printed circuit board is provided. The antenna device has an antenna element connected to a feeder circuit provided on the printed board. The antenna device has an isolating material provided between the antenna element and the substrate material. The isolating material is constituted by an insulating substrate material and a plurality of pieces of magnetic material provided on the substrate material Adjacent ones of the pieces of the magnetic material are arranged separate from each other. | 06-24-2010 |
20120222742 | COMPOUND THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A compound thin film solar cell of an embodiment includes: as a light-absorbing layer a semiconductor thin film which contains Cu, an element A (A is at least one element selected from a group consisting of Al, In and Ga) and Te, and has a chalcopyrite crystal structure, wherein a buffer layer that forms an interface with the light-absorbing layer is a compound which contains at least one element selected from Cd, Zn and a group consisting of In and Ga and at least one element selected from a group consisting of S, Se and Te, and has any crystal structure of a sphalerite structure, a wurtzite structure and a defect spinel structure, and a lattice constant “a” of the buffer layer with the sphalerite structure or a lattice constant “a” of the buffer layer at the time of converting the wurtzite structure or the defect spinel structure to the sphalerite structure is not smaller than 0.59 nm and not larger than 0.62 nm. | 09-06-2012 |
20120227803 | COMPOUND THIN FILM SOLAR CELL - A compound thin film solar cell contains at least: includes a substrate; a back surface electrode provided on the substrate; an extraction electrode provided on the back surface electrode; a light absorbing layer provided on the back surface electrode; a buffer layer provided on the light absorbing layer; a transparent electrode layer provided on the buffer layer; an anti-reflective film provided on the transparent electrode layer; and an extraction electrode provided on the transparent electrode layer, wherein the light absorbing layer is formed from Cu(Al | 09-13-2012 |
20130146142 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, the first electrode including a first compound comprising at least one selected from (Zn | 06-13-2013 |
20140053902 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes a p-type light absorbing layer containing Cu, at least one or more Group IIIb elements selected from the group including Al, In and Ga, and at least one or more elements selected from the group including O, S, Se and Te; and an n-type semiconductor layer formed on the p-type light absorbing layer and represented by any one of Zn | 02-27-2014 |
20140053903 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (Cu), at least one Group IIIb element selected from the group including aluminum (Al), indium (In) and gallium (Ga), and sulfur (S) or selenium (Se), and having a chalcopyrite structure; and a buffer layer formed from zinc (Zn) and oxygen (O) or sulfur (S), wherein the molar ratio represented by S/(S+O) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm. | 02-27-2014 |
20140053904 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0. | 02-27-2014 |
20140083496 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element includes a photoelectric conversion layer, a transparent electrode, an intermediate layer, and a window layer. The photoelectric conversion layer includes a homojunction of a p-type compound semiconductor layer and an n-type compound semiconductor layer. The p-type and n-type compound semiconductors include group I-III-VI | 03-27-2014 |
20140144502 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode. | 05-29-2014 |
20140144510 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a p-type light absorbing layer having a chalcopyrite structure; an n-type semiconductor layer on the p-type light absorbing layer; an oxide layer on the n-type semiconductor layer; and a transparent electrode on the oxide layer. | 05-29-2014 |
20140166078 | LIGHT CONCENTRATOR AND A SOLAR CELL - A light concentrator of an embodiment includes: a first high refractive index layer, a first low refractive index layer, and a second high refractive index layer stacked in sequence, wherein a surface on the first low refractive index layer side of the first high refractive index layer has a periodic concavoconvex region. | 06-19-2014 |
20140246087 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a compound semiconductor constituted with a chalcopyrite structure or a stannite structure, the compound semiconductor having a first element of a Group 11 element and a second element of a Group 16 element and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly having a homo junction, wherein the n-type portion comprises a dopant which has a formal charge V | 09-04-2014 |
20140290727 | SOLAR CELL - A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI | 10-02-2014 |