Patent application number | Description | Published |
20120103255 | ALIGNMENT METHOD, ALIGNMENT APPARATUS, AND ORGANIC EL ELEMENT MANUFACTURING APPARATUS - Provided are an alignment method and an alignment apparatus, in which the number of times to carry out alignment operation is reduced to reduce damage of a substrate and a mask and improve the productivity of evaporation using the mask. Vibrations in the direction of gravity of a substrate immediately after the substrate is brought in are measured by a laser vibrometer. Based on the obtained vibration data, a vibration control portion generates an antiphase vibrational wave. After the vibrational wave is applied to the substrate to reduce the vibrations of the substrate, the alignment between the substrate and a mask is carried out. | 05-03-2012 |
20120114833 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - A film formation apparatus includes a film formation source, a quartz oscillator for measurement, and a quartz oscillator for calibration. When a thin film is formed on an object, a film forming material is heated in the source to release vapors thereof. The quartz oscillator for measurement measures the amount of the film forming material formed on the object, while the quartz oscillator for calibration calibrates the quartz oscillator for measurement. A moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position with respect to the film formation object is further provided, the moving part holds the quartz oscillator for measurement so that its relative position with respect to the film formation source is maintained, and the quartz oscillator for calibration is provided above the moving part when the moving part is at the film formation waiting position. | 05-10-2012 |
20120114837 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - Provided are a film formation apparatus and a film formation method which may control with accuracy the thickness of a thin film formed on the film formation object. A film formation apparatus includes a moving part (film formation source unit) for moving a film formation source between a predetermined film formation waiting position and a predetermined film forming position is provided, and the moving part holds a quartz oscillator for measurement and a quartz oscillator for calibration so that their relative positions with respect to the film formation source are maintained. And a calibration step for calibrating a monitored value of the quartz oscillator for measurement, using a monitored value of the quartz oscillator for calibration, is performed in a middle of the film forming step of forming the film on the film formation object. | 05-10-2012 |
20120114838 | FILM FORMATION APPARATUS - A film formation apparatus includes a film formation source, a quartz oscillator for measurement, and a quartz oscillator for calibration. When a thin film of a film forming material is formed on a film formation object, the film forming material is heated in the film formation source to release vapors thereof. The quartz oscillator for measurement measures the amount of the film forming material formed on the film formation object, while the quartz oscillator for calibration calibrates the quartz oscillator for measurement. In the film formation apparatus, there are further provided a moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position with respect to the film formation object and a temperature control part for controlling a temperature of the quartz oscillator for measurement and a temperature of the quartz oscillator for calibration to be substantially the same. | 05-10-2012 |
20120114839 | VACUUM VAPOR DEPOSITION SYSTEM - Provided is a vacuum vapor deposition system, which enables a vapor deposition rate to be measured accurately and a film thickness to be controlled with higher accuracy. The vacuum vapor deposition system includes: a vacuum chamber; a substrate holding mechanism; a vapor depositing source; a film thickness sensor for monitoring; a control system including a temperature controller and a film thickness controller; and a film thickness sensor for calibration, in which a distance from one film thickness sensor whose measurement accuracy is to be enhanced, out of the film thickness sensor for monitoring and the film thickness sensor for calibration, to a center of the opening of the vapor depositing source, is smaller than a distance from another film thickness sensor to the center of the opening of the vapor depositing source. | 05-10-2012 |
20120114840 | VACUUM VAPOR DEPOSITION SYSTEM - Provided is a vacuum vapor deposition system including: a vapor depositing source; a film thickness sensor for monitoring; and a film thickness sensor for calibration, in which a distance L | 05-10-2012 |
20150176129 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - Provided are a film formation apparatus and a film formation method which may control with accuracy the thickness of a thin film formed on the film formation object. A film formation apparatus includes a moving part (film formation source unit) for moving a film formation source between a predetermined film formation waiting position and a predetermined film forming position is provided, and the moving part holds a quartz oscillator for measurement and a quartz oscillator for calibration so that their relative positions with respect to the film formation source are maintained. And a calibration step for calibrating a monitored value of the quartz oscillator for measurement, using a monitored value of the quartz oscillator for calibration, is performed in a middle of the film forming step of forming the film on the film formation object. | 06-25-2015 |