Patent application number | Description | Published |
20090178621 | SUBSTRATE TREATING SYSTEM FOR DEPOSITING A METAL GATE ON A HIGH-K DIELECTRIC FILM AND IMPROVING HIGH-K DIELECTRIC FILM AND METAL GATE INTERFACE - An apparatus to improve high-k dielectric film and metal gate interface in the fabrication of MOSFET by depositing a metal gate on a high-k dielectric comprising an annealing step annealing a substrate with high-k dielectric film deposited thereon in a thermal annealing module and a depositing step depositing a metal gate material on said annealed substrate in a metal gate deposition module, characterized that said annealing step and depositing step are carried out consecutively without a vacuum break. | 07-16-2009 |
20100133092 | SPUTTERING METHOD AND SPUTTERING APPARATUS - A sputtering method and a sputtering apparatus are provided in which a target is disposed being inclined relative to a substrate placed on a substrate-placing table so that the condition of d≧D is satisfied, (d is the diameter of the substrate, and D is the diameter of the target), and the total number of rotations R of the substrate-placing table from the beginning of film-deposition on the substrate to the completion thereof becomes ten or more. Also the sputtering method and the sputtering apparatus are provided in which the rotational speed V of the substrate-placing table is controlled so that the total number of rotations R thereof satisfies the formula of | 06-03-2010 |
20100221885 | METHOD OF MANUFACTURING DIELECTRIC FILM - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 09-02-2010 |
20100244192 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 09-30-2010 |
20100330813 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 12-30-2010 |
20110027979 | DIELECTRIC FILM, METHOD OF MANUFACUTRING SEMICONDUCTOR DEVICE USING DIELECTRIC FILM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10 | 02-03-2011 |
20110064642 | DIELECTRIC FILM WITH METALLIC OXYNITRIDE - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/(A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 03-17-2011 |
20110156128 | DIELECTRIC FILM MANUFACTURING METHOD - The present invention provides a manufacturing method of a dielectric film which reduces a leak current value while suppressing the reduction of a relative permittivity, suppresses the reduction of a deposition rate caused by the reduction of a sputtering rate, and also provides excellent planar uniformity. A dielectric film manufacturing method according to an embodiment of the present invention is forms a dielectric film of a metal oxide mainly containing Al, Si, and O on a substrate, and comprises steps of forming the metal oxide having an amorphous structure in which a molar fraction between an Al element and a Si element, Si/(Si+Al), is 006-30-2011 | |
20110210405 | METAL NITRIDE FILM, SEMICONDUCTOR DEVICE USING THE METAL NITRIDE FILM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less. | 09-01-2011 |
20110312179 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The present invention provides a substrate processing method and a substrate processing apparatus, which are capable of forming a high-k dielectric film with few trapping levels due to oxygen deficiencies and hot carriers by a sputtering method in one and the same vacuum vessel. The substrate processing method according to a first embodiment of the present invention includes: a first step of heating a to-be-processed substrate ( | 12-22-2011 |
20120021612 | METHODS FOR MANUFACTURING DIELECTRIC FILMS - A method for manufacturing a dielectric film having a high dielectric constant is provided. | 01-26-2012 |
20120161322 | ELECTRONIC COMPONENT MANUFACTURING METHOD INCLUDING STEP OF EMBEDDING METAL FILM - The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets. | 06-28-2012 |
20120248397 | NONVOLATILE STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - In a variable resistance nonvolatile storage element, an electrode suitable for a variable resistance operation and formed of a metallic nitride layer containing Ti and N is provided. In a nonvolatile storage device including: a first electrode; a second electrode; and a variable resistance layer which is sandwiched between the first electrode and the second electrode and in which a resistance value changes to two different resistance states, at least one of the first electrode and the second electrode is an electrode including a metallic nitride layer containing at least Ti and N, and a mole ratio (N/Ti ratio) between Ti and N in at least a part of the metallic nitride layer, the part being in contact with the variable resistance layer is 1.15 or more and a film density is 4.7 g/cc or more. | 10-04-2012 |
20130285158 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer. | 10-31-2013 |
Patent application number | Description | Published |
20090170340 | METHOD OF FORMING DIELECTRIC FILMS - A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film. | 07-02-2009 |
20090170341 | PROCESS FOR FORMING DIELECTRIC FILMS - A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms. | 07-02-2009 |
20090170344 | METHOD FOR FORMING DIELECTRIC FILMS - A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon. | 07-02-2009 |
20120199919 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate electrode achieves a desired work function in a semiconductor device including a field-effect transistor equipped with a gate electrode composed of a metal nitride layer. | 08-09-2012 |