Patent application number | Description | Published |
20130181228 | POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - First chip main surfaces of first semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the first semiconductor chips are bonded to a first electrode. First chip main surfaces of second semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the second semiconductor chips are bonded to a first electrode. A plurality of electrodes are provided by a lead frame. An insulating member is provided on a side opposite to the chips when viewed from the heat spreader. An insulating substrate is provided on a side opposite to the chips when viewed from the first electrodes. | 07-18-2013 |
20140070398 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A power semiconductor element, a high-voltage electrode electrically connected to the power semiconductor element, a heat radiating plate connected to the power semiconductor element and having heat radiation property, a cooling element connected to the heat radiating plate with an insulating film being interposed, and a seal covering the power semiconductor element, a part of the high-voltage electrode, the heat radiating plate, the insulating film, and a part of the cooling element are included. The cooling element includes a base portion of which part is embedded in the seal and a cooling member connected to the base portion. The base portion and the cooling member are separate from each other, and the cooling member is fixed to the base portion exposed through the seal. | 03-13-2014 |
20140217569 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the present invention includes a plurality of semiconductor chips, a plate electrode disposed on the plurality of semiconductor chips for connecting the plurality of semiconductor chips, and an electrode disposed on the plate electrode. The electrode has a plurality of intermittent bonding portions to be bonded to the plate electrode and a protruded portion which is protruded erectly from the bonding portions. The protruded portion has an ultrasonic bonding portion which is parallel with the bonding portion and is ultrasonic bonded to an external electrode. | 08-07-2014 |
20140367842 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A power semiconductor element, a high-voltage electrode electrically connected to the power semiconductor element, a heat radiating plate connected to the power semiconductor element and having heat radiation property, a cooling element connected to the heat radiating plate with an insulating film being interposed, and a seal covering the power semiconductor element, a part of the high-voltage electrode, the heat radiating plate, the insulating film, and a part of the cooling element are included. The cooling element includes a base portion of which part is embedded in the seal and a cooling member connected to the base portion. The base portion and the cooling member are separate from each other, and the cooling member is fixed to the base portion exposed through the seal. | 12-18-2014 |
20150035138 | SEMICONDUCTOR DEVICE - A circuit pattern is bonded to a top surface of a ceramic substrate. A cooling body is bonded to an undersurface of the ceramic substrate. An IGBT and a FWD are provided on the circuit pattern. A coating film covers a junction between the ceramic substrate and the circuit pattern, and a junction between the ceramic substrate and the cooling body. A mold resin seals the ceramic substrate, the circuit pattern, the IGBT, the FWD, the cooling body, and the coating film etc. The ceramic substrate has higher thermal conductivity than the coating film. The coating film has lower hardness than the mold resin and alleviates stress applied from the mold resin to the ceramic substrate. The circuit pattern and the cooling body includes a groove contacting the mold resin without being covered with the coating film. | 02-05-2015 |
20150061098 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a conductive portion having semiconductor elements provided on a substrate, a case housing the conductive portion, and a lead terminal integrated into the case to be directly connected to the semiconductor elements or an interconnection of the substrate. The lead terminal has a stress relief shape for reliving stress generated in the lead terminal. | 03-05-2015 |
20150092379 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element, in which an undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate, and the undercut part is also filled with the sealing resin. | 04-02-2015 |
20150380274 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Entry of resin into a cylindrical electrode can be suppressed without excessively increasing the number of parts and without unnecessarily damaging members. For this purpose, a semiconductor chip and a cylindrical electrode are mounted on one main surface of substrate. The substrate, the semiconductor chip, and the cylindrical electrode are sealed with resin material such that the cylindrical electrode has one end mounted to the substrate and the other opposite end at least exposed. After the step of sealing, an opening extending from the other end of the cylindrical electrode to a cavity in the cylindrical electrode is formed. Before performing the step of forming an opening, the other end of the cylindrical electrode is closed. | 12-31-2015 |