Patent application number | Description | Published |
20090008660 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 01-08-2009 |
20090124042 | ZnO BASED SEMICONDUCTOR DEVICE MANUFACTURE METHOD - A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a −C plane on an opposite surface, a first ZnO based semiconductor layer having a first conductivity type epitaxially grown above the +C plane of the ZnO based semiconductor substrate, and a second ZnO based semiconductor layer having a second conductivity type opposite to the first conductivity type epitaxially grown above the first semiconductor layer; and (b) wet-etching the ZnO based semiconductor wafer with acid etching liquid to etch the −C plane of the ZnO based semiconductor substrate | 05-14-2009 |
20090206333 | ZnO BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure. | 08-20-2009 |
20090267065 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 μm and is surrounded by two parallel first side edges forming an angle in a range of 52.7° to 54.7° with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7° to 54.7° with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves. | 10-29-2009 |
20090294758 | ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO. | 12-03-2009 |
20110059563 | MANUFACTURE METHOD FOR ZnO-BASED LIGHT EMITTING DEVICE - A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type. | 03-10-2011 |
20110084275 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 04-14-2011 |
20130269600 | METHOD FOR GROWING MAGNESIUM-ZINC-OXIDE-BASED CRYSTAL - The method includes a step of growing an MgZnO-based single-crystal layer at a growth pressure of less than 10 kPa and a growth temperature equal to or greater than an upper limit temperature for ZnO single-crystal growth, wherein the MgZnO-based single-crystal layer is grown using a magnesium-based metal-organic compound having a Cp group, water vapor (H | 10-17-2013 |
Patent application number | Description | Published |
20100064966 | METHOD OF GROWING ZINC-OXIDE-BASED SEMICONDUCTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method includes the steps of, using water vapor and a metalorganic compound not containing oxygen, (a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer; and (b) performing crystal growth at a high growth temperature and at a pressure higher than the low growth pressure to form a high-temperature grown single-crystal layer on the low-temperature grown single-crystal layer. | 03-18-2010 |
20100065843 | ZINC OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed. | 03-18-2010 |
20100258795 | ZINC OXIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer. | 10-14-2010 |
20100258796 | ZINC OXIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a ZnO-based semiconductor device, the method includes a first metal layer formation step of forming a first metal layer on a p-type ZnO-based semiconductor layer in island-form and/or mesh-form; a heat treatment step of performing heat treatment of the first metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer comprising elements of the p-type ZnO-based semiconductor layer and the first metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the first metal layer; and a second metal layer formation step of forming a second metal layer so as to cover the first metal layer and the exposed portions of the p-type ZnO-based semiconductor layer through openings of the first metal layer. | 10-14-2010 |
20100295039 | METHOD FOR GROWING ZINC-OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600° C. and less than 900° C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method. | 11-25-2010 |
20100295040 | METHOD FOR GROWING ZINC-OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method which has a low-temperature growth step of growing a buffer layer of a ZnO-based single crystal on the substrate at a growth temperature in the range of 250° C. to 450° C. using a polar oxygen material and a metalorganic compound containing no oxygen; performing a heat treatment of the buffer layer to effect a transition of the buffer layer to a thermostable-state single crystal layer; and a high-temperature growth step of growing the ZnO-based single crystal layer on the thermostable-state single crystal layer at a growth temperature in the range of 600° C. to 900° C. using a polar oxygen material and a metalorganic compound containing no oxygen. | 11-25-2010 |
20110062452 | METHOD FOR PRODUCING ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of Mg | 03-17-2011 |