Naniwae
Koichi Naniwae, Tokyo JP
Patent application number | Description | Published |
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20090257467 | Group III Nitride Semiconductor Device and Method for Manufacturing Group III Nitride Semiconductor Device - A laser diode | 10-15-2009 |
20100252914 | OPTICAL SEMICONDUCTOR DEVICE WITH A CONCENTRATION OF RESIDUAL SILICON - In a crystal growth reactor, a source material having an etching action and a crystal growth source material are simultaneously supplied to a semiconductor wafer surface, so that residual impurities can be eliminated in an efficient manner by balancing etching rate and crystal growth rate. | 10-07-2010 |
Koichi Naniwae, Aichi JP
Patent application number | Description | Published |
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20130126907 | GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. | 05-23-2013 |
20140312004 | ETCHING METHOD - Provided are an etching method capable of increasing an etching selectivity between a subject material and a resist, a sapphire substrate processed using the etching method, and a light-emitting device including the sapphire substrate. An etching method using a plasma etching apparatus includes: a resist film forming step of forming a resist film on a subject material; a pattern forming step of forming a predetermined pattern on the resist film; a resist degenerating step of exposing the resist film on which the pattern is formed to plasma under a predetermined degeneration condition to degenerate the resist film and increase an etching selectivity; and a subject material etching step of exposing the subject material to plasma under an etching condition different from the degeneration condition to etch the subject material using the resist film having an increased etching selectivity as a mask. | 10-23-2014 |
Koichi Naniwae, Nagoya-Shi JP
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20150152326 | SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENT - Provided are a SiC fluorescent material with improved luminous efficiency, a method for manufacturing the same and a light emitting element. A SiC fluorescent material comprises a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site, and a donor impurity and an acceptor impurity added therein, wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure. | 06-04-2015 |
Koichi Naniwae, Nagoya-Shi, Aichi JP
Patent application number | Description | Published |
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20160005923 | LED ELEMENT AND MANUFACTURING METHOD FOR SAME - An LED element capable of further improving the light extraction efficiency and a manufacturing method for the same are provided. | 01-07-2016 |