Patent application number | Description | Published |
20110073750 | IMAGE PICKUP APPARATUS AND RADIATION IMAGE PICKUP SYSTEM - An image pickup apparatus includes an insulating substrate, and a plurality of pixels each including a conversion element configured to convert incident light or radiation into a charge and also including a switch element configured to transfer an electric signal corresponding to the charge generated by the conversion element. Gate wiring is configured to drive the switch element to transfer the electric signal through signal wiring. The plurality of pixels, the signal wiring, and the gate wiring are disposed on one surface of the insulating substrate. The insulating substrate has vias that provide electrical connections between the one surface and an opposite surface of the insulating substrate. | 03-31-2011 |
20120044415 | IMAGE PICKUP MODULE AND CAMERA - An image pickup module includes a cover member, an image pickup device chip including photodiodes, a fixing member which is arranged around the image pickup device chip and which connects the cover member and the image pickup device chip together, a rewiring substrate arranged on the side opposite to the cover member of the image pickup device chip, connection members for connecting the image pickup device chip with the rewiring substrate, and a space surrounded by the cover member, the image pickup device chip, and the fixing member. The image pickup device chip includes a semiconductor substrate. The semiconductor substrate includes through-hole electrodes penetrating the substrate. When an area corresponding to the fixing member in the orthogonal projection of the image pickup module with respect to the cover module is defined as a fixed area, the through-hole electrodes and the connection members are arranged in the fixed area. | 02-23-2012 |
20120223240 | RADIATION DETECTION APPARATUS, SCINTILLATOR PANEL, METHOD FOR MANUFACTURING SAME AND RADIATION DETECTION SYSTEM - A radiation detection apparatus comprising a sensor panel and a scintillator panel is provided. The scintillator panel including a substrate, a scintillator disposed on the substrate, and a scintillator protective film that has a first organic protective layer and an inorganic protective layer, and covers the scintillator. The scintillator protective film is located between the sensor panel and the scintillator. The first organic protective layer is located on a scintillator side from the inorganic protective layer. A surface on a sensor panel side of the scintillator is partially in contact with the inorganic protective layer. | 09-06-2012 |
20130153775 | RADIATION DETECTION APPARATUS - A radiation detection apparatus comprising, a sensor panel including sensor unit disposed on a plurality of photoelectric converters on a substrate, a first scintillator layer disposed on the sensor panel, and a second scintillator layer disposed on the first scintillator layer, wherein the first scintillator layer and the second scintillator layer respectively emit light beams having different wavelengths, and the sensor unit which includes a first photoelectric converter configured to detect the light beam emitted by the first scintillator layer, a first transistor configured to output a signal from the first scintillator layer, a second photoelectric converter configured to detect the light beam emitted by the second scintillator layer, and a second transistor configured to output a signal from the second scintillator layer, and individually convert the light beams having the different wavelengths into electrical signals. | 06-20-2013 |
20130161522 | SCINTILLATOR PANEL, RADIATION DETECTION APPARATUS, AND RADIATION DETECTION SYSTEM INCLUDING THE SAME - A scintillator panel includes a scintillator that converts radiation into light of a wavelength detectable by photoelectric conversion elements. The scintillator panel has a surface including a plurality of protrusions adjacent to each other. The adjacent protrusions are arranged at a pitch below a diffraction limit for the wavelength of the light emitted by the scintillator. Thus, a scintillator panel with improved availability of light emitted by a scintillator is provided. | 06-27-2013 |
20130322598 | RADIATION DETECTION APPARATUS AND IMAGING SYSTEM - A radiation detection apparatus comprising a sensor panel in which a plurality of sensors for detecting light are arranged, and a scintillator layer containing scintillator particles for converting an incident radiation into light, and an adhesive resin which has an adherence property and bonds the scintillator particles, wherein the scintillator layer is adhered to the sensor panel by the adhesive resin, a modulus of elasticity in tensile of the adhesive resin is higher than 0.7 GPa and lower than 3.5 GPa, and a volume ratio of the adhesive resin to the scintillator particles is not lower than 1% and not higher than 5%. | 12-05-2013 |
20140091225 | RADIATION IMAGING APPARATUS, RADIATION IMAGING SYSTEM, AND RADIATION IMAGING APPARATUS MANUFACTURING METHOD - The present invention provides a radiation imaging apparatus including a sensor substrate on which photoelectric conversion elements are arranged, a scintillator base on which a scintillator layer for converting radiation into light with a wavelength detectable by the photoelectric conversion elements is arranged, and which is adhered to the sensor substrate so that the scintillator layer is arranged between the sensor substrate and the scintillator base, and a sealing member configured to fix an edge portion of the scintillator base and the sensor substrate, and spaced apart from the scintillator layer, wherein the scintillator base includes a bent portion for reducing a stress that acts on the sealing member in a region between an outer edge of a region in which the scintillator layer is arranged and the edge portion fixed by the sealing member. | 04-03-2014 |
20140117244 | SCINTILLATOR, RADIATION DETECTION APPARATUS, AND MANUFACTURING METHOD THEREOF - A scintillator has a two-dimensional array of a plurality of columnar crystals which converts radiation into light, and a covering portion covering the two-dimensional array. The covering portion includes connecting portions configured to partially connect the columnar crystals while partially forming cavities in gaps between the columnar crystals in the two-dimensional array. | 05-01-2014 |
20140151769 | DETECTION APPARATUS AND RADIATION DETECTION SYSTEM - A detection apparatus includes a conversion layer configured to convert incident light or radiation into a charge, electrodes configured to collect a charge produced as a result of the conversion by the conversion layer, and impurity semiconductor layers arranged between the electrodes and the conversion layer. The conversion layer is arranged over the electrodes so as to cover the electrodes. A part of the conversion layer which covers a region between an adjacent pair of the electrodes includes a portion smaller in film thickness than a part of the conversion layer which covers edges of the electrodes. | 06-05-2014 |
Patent application number | Description | Published |
20100142037 | VARIABLE POWER RELAY OPTICAL SYSTEM AND MICROSCOPE EQUIPPED THEREWITH - A variable power relay optical system comprising: a variable power lens performing zooming a secondary image based on light from a primary image; and a rear group forming the secondary image based on the light passing through the variable power lens; the variable power lens consisting of, in order from the primary image side, a first group having positive power, a second group having negative power, a third group having positive power, and a fourth group having positive power, upon zooming from a high magnification end to a low magnification end, the fourth group being moved to the secondary image side, and a distance between the first group and the second group increasing, positions of the primary image and the secondary image, an entrance pupil of the variable power relay optical system, a pupil of the variable power lens, and an exit pupil of the variable power relay optical system being substantially kept constant, and the pupil of the variable power lens being disposed to the secondary image side of the last surface of the variable power lens. | 06-10-2010 |
20100172029 | IMAGE FORMING LENS AND MICROSCOPE APPARATUS USING THE SAME - An image forming lens has a configuration that an image forming lens IL for receiving parallel beams of light emitted from an observation target object and emerging from an infinity-designed objective lens of a microscope and forming an image of the observation target object in a predetermined position, is constructed of, in order from an object side, a first lens group G | 07-08-2010 |
20130088776 | MICROSCOPE APPARATUS - There is provided a microscope apparatus including: a plurality of objective lenses having different magnifications; an imaging system that receives light, which is generated from a sample and emitted from the objective lens when excitation light is emitted to a sample including a fluorescent material that is activated when irradiated with activation light having a predetermined wavelength and fluoresces to be inactivated when irradiated with excitation light having a different wavelength from the activation light in the activation state and that images the light in a state where an astigmatic difference is given to the image of the sample; and an imaging device that captures the image of the sample from the imaging system. The imaging system includes an astigmatic difference changing device that changes the astigmatic difference according to the depth of focus of the objective lens. | 04-11-2013 |
20140320957 | STRUCTURED ILLUMINATING APPARATUS, STRUCTURED ILLUMINATING MICROSCOPY APPARATUS, AND STRUCTURED ILLUMINATING METHOD - A structured illuminating apparatus includes a branching unit branching an exit light flux from a light source into at least two branched light fluxes, an illuminating optical system making the two branched light fluxes to be respectively collected at mutually different positions on a pupil plane of an objective lens and making the two branched light fluxes to be interfered with each other to illuminate a specimen with an interference fringe of the two branched light fluxes, and an adjusting unit adjusting a height from an optical axis of the illuminating optical system to two collecting points formed on the pupil plane of the objective lens by the two branched light fluxes. | 10-30-2014 |
Patent application number | Description | Published |
20080198046 | VARIABLE LENGTH CODE DECODING APPARATUS AND VARIABLE LENGTH CODE DECODING METHOD - When a combination between a plurality of FIFO memories and a variable length coding table is used, a load generated by an increase in number of FIFO memories serving as output destinations of a codeword length output from the variable length coding table when the codeword length is output is reduced. | 08-21-2008 |
20080238733 | IMAGE DECODING APPARATUS AND DECODING METHOD - According to the present invention, there is provided an image decoding apparatus having: a table selection controller configured to output a syntax selection signal which selects one of a prefix level_prefix, a suffix level_suffix, and a TrailingOnes syntax; a variable-length code decoding device configured to receive a bit stream, the syntax selection signal, and a suffix length suffixLength, and, by using data contained in the bit stream and the suffix length suffixLength, simultaneously decode the prefix level_prefix and the suffix level_suffix and output the result if the syntax selection signal selects the prefix level_prefix and the suffix level_suffix, and decode the TrailingOnes syntax and output the result if the syntax selection signal selects the TrailingOnes syntax; a level formation device configured to receive the decoded prefix level_prefix, the decoded suffix level_suffix, and the decoded TrailingOnes syntax, and form and output a level; and a suffix length updating device configured to receive the decoded prefix level_prefix, the decoded suffix level_suffix, and the decoded TrailingOnes syntax, and update the suffix length suffixLength. | 10-02-2008 |
20100260256 | MOVING IMAGE COMPRESSION-CODING DEVICE, METHOD OF COMPRESSION-CODING MOVING IMAGE, AND H.264 MOVING IMAGE COMPRESSION-CODING DEVICE - A moving image compression-coding device has a pixel determination module configured to determine whether a color of each pixel in a macro block having a plurality of pixels in an input image is a predetermined color, a pixel counter configured to count a number of the pixels having the predetermined color in the macro block, a macro block determination module configured to determine whether a color of the macro block is considered to be the predetermined color according to the count result, and a compression-coded data generator configured to compression-code the input image with a compression ratio depending on the determination result. | 10-14-2010 |
Patent application number | Description | Published |
20090041935 | METHOD FOR CAUSING PARTICULATE BASE MATERIAL TO CARRY ALLOY PARTICLE - A method is for causing, within a decompression device, a particulate base material to carry an alloy particle having a particle size smaller than that of the particulate base material, the alloy particle containing at least two elements, the method including: forming the particulate base material by a chemical deposition; causing, in the decompression device, the particulate base material to carry a microparticle element; and forming the alloy particle by alloying the particulate base material and the microparticle element. | 02-12-2009 |
20090068503 | SPUTTERING APPARATUS - A sputtering apparatus includes: a supporting member that accommodates a base material; a first sputtering source containing platinum and having a rectangular shape; a second sputtering source containing an element different from that contained in the first sputtering source; a first magnet that is disposed to face the supporting member, the first magnet applying a first magnetic field near a surface of the first sputtering source in a first magnetic flux density; and a second magnet that is disposed to face the supporting member, the second magnet applying a second magnetic field near a surface of the second sputtering source in a second magnetic flux density, wherein at least one of the first magnetic flux density and the second magnetic flux density is configured to be variable. | 03-12-2009 |
20090082211 | SUPERCONDUCTING MEMBER - This invention provides a thin superconducting oxide film, which can realize a high critical current, and a superconducting member having a high level of electric power resistance. The superconducting member comprises a sapphire R face substrate, a buffer layer formed of grain lumps of an oxide provided on the sapphire R face substrate, and a superconducting layer provided on the buffer layer. The nearest neighbor distance between oxygen atoms in the oxide and the grain diameter of grain lumps of the oxide have been specified. The superconducting member can be used as a member for superconducting filters. | 03-26-2009 |
Patent application number | Description | Published |
20140209980 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes forming a buffer layer made of a nitride semiconductor, forming a channel layer made of a nitride semiconductor over the buffer layer, forming a barrier layer made of a nitride semiconductor over the channel layer, forming a cap layer made of a nitride semiconductor over the barrier layer, forming a gate insulating film so as to in contact with the cap layer; and forming a gate electrode over the gate insulating film, wherein compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer by controlling compositions of the cap layer, the barrier layer, the channel layer, and the buffer layer. | 07-31-2014 |
20140239311 | SEMICONDUCTOR DEVICE - A semiconductor device includes a buffer layer, a channel layer and a barrier layer formed over a substrate, a trench penetrating through the barrier layer to reach the middle of the channel layer, and a gate electrode disposed inside the trench via a gate insulating film. The channel layer contains n-type impurities, and a region of the channel layer positioned on a buffer layer side has an n-type impurity concentration larger than a region of the channel layer positioned on a barrier layer side, and the buffer layer is made of nitride semiconductor having a band gap wider than that of the channel layer. The channel layer is made of GaN and the buffer layer is made of AlGaN. The channel layer has a channel lower layer containing n-type impurities at an intermediate concentration and a main channel layer formed thereon and containing n-type impurities at a low concentration. | 08-28-2014 |
20140264274 | SEMICONDUCTOR DEVICE - To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer. That is, the concentration of acceptors introduced into the nitride semiconductor layers having a small band gap is higher than the concentration of acceptors introduced into the nitride semiconductor layers having a large band gap. | 09-18-2014 |
20140353720 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a barrier layer, a trench penetrating therethrough and reaching the inside of the channel layer, a gate electrode placed in the trench via a gate insulating film, and drain and source electrodes on the barrier layer on both sides of the gate electrode. The gate insulating film has a first portion made of a first insulating film and extending from the end portion of the trench to the side of the drain electrode and a second portion made of first and second insulating films and placed on the side of the drain electrode relative to the first portion. The on resistance can be reduced by decreasing the thickness of the first portion at the end portion of the trench on the side of the drain electrode. | 12-04-2014 |
20150041821 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An electrode comes in ohmic contact with an AlGaN layer. A semiconductor device SD has a nitride semiconductor layer GN | 02-12-2015 |
20150048419 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a channel layer formed above a substrate, a barrier layer formed over the channel layer and having a band gap larger than that of the channel layer, a trench passing through the barrier layer as far as a midway of the channel layer, and a gate electrode disposed byway of a gate insulation film in the inside of the trench. Then, the end of the bottom of the trench is in a rounded shape and the gate insulation film in contact with the end of the bottom of the trench is in a rounded shape. By providing the end of the bottom of the trench with a roundness as described above, a thickness of the gate insulation film situated between the end of the bottom of the gate electrode and the end of the bottom of the trench can be decreased. Thus, the channel is formed also at the end of the bottom of the trench to reduce the resistance of the channel. | 02-19-2015 |