Patent application number | Description | Published |
20110033614 | METHOD FOR MANUFACTURING OPTICAL WAVEGUIDE - An object is to manufacture an optical waveguide having low optical loss, by smoothing the surface of a core. To this end, a method for manufacturing an optical waveguide includes: a core-forming layer formation step of forming a core-forming layer of a photosensitive polymer on a surface of a lower cladding layer formed on a substrate; a smoothing step of smoothing the surface by lowering a surface viscosity thereof through a heat treatment of the core-forming layer; and a photocuring step of forming a core through selective exposure of the smoothed core-forming layer. | 02-10-2011 |
20110243495 | METHOD FOR FORMING MIRROR-REFLECTING FILM IN OPTICAL WIRING BOARD, AND OPTICAL WIRING BOARD - An aspect of the present invention is directed to a method for forming a mirror-reflecting film on a waveguide in an optical wiring board, characterized in that a multilayer film, in which a base, a metal layer and an adhesive layer are layered in this order, is used, and the metal layer is transferred and bonded to an inclined face for mirror-reflecting film formation provided on the waveguide, with the adhesive layer of the multilayer film intervening. The present invention provides a method which, when forming a mirror-reflecting film on a waveguide in an optical wiring board, enables inexpensive and easy formation of the mirror-reflecting film, using the smallest quantity of metal possible and employing comparatively simple facilities and techniques. | 10-06-2011 |
20120014640 | METHOD OF MANUFACTURING OPTICAL WAVEGUIDE CORE, METHOD OF MANUFACTURING OPTICAL WAVEGUIDE, OPTICAL WAVEGUIDE, AND OPTOELECTRIC COMPOSITE WIRING BOARD - In order to provide a method of efficiently manufacturing an optical waveguide core having an endface inclined at a predetermined angle, the following method of manufacturing an optical waveguide core is employed. The method includes: a core material layer forming step of forming a core material layer formed of a photosensitive material on a surface of a cladding layer that has been formed on a substrate; a high refractive index substance covering step of covering a surface of the core material layer with a substance having a refractive index higher than 1 by bringing the high refractive index substance into close contact with the core material layer surface; an exposure step of pattern exposing the core material layer in a predetermined core-forming shape to from a core by irradiating the core material layer on a side covered with the high refractive index substance with exposure light inclined at a predetermined angle with respect to the cladding layer surface; a high refractive index substance removing step of removing the high refractive index substance from the surface of the core material layer exposed in the exposure step; and an development step of developing the core material layer from which the high refractive index substance has been removed in the high refractive index substance removing step so as to form the core having an inclined endface. | 01-19-2012 |
20120020613 | METHOD OF MANUFACTURING OPTICAL WAVEGUIDE HAVING MIRROR FACE, AND OPTOELECTRONIC COMPOSITE WIRING BOARD - In order to provide a method of manufacturing an optical waveguide, which enables the formation of a smooth mirror face, the following method of manufacturing an optical waveguide having a mirror face is used. The method includes: a photocurable resin sheet laminating step of laminating an uncured photocurable resin sheet for forming a core on a surface of a first cladding layer that has been formed on a substrate; a mirror face forming step of forming a mirror face for guiding light to the core by pressing a die provided with a blade having, in a cross-section, a 45° inclined plane into the photocurable resin sheet; a core forming step of forming a core having the mirror face positioned at an end thereof by selectively exposing to light, and developing, the photocurable resin sheet; and a cladding layer forming step of forming a second cladding layer so as to bury the core. | 01-26-2012 |
20120033913 | OPTICAL WAVEGUIDE-FORMING EPOXY RESIN COMPOSITION, OPTICAL WAVEGUIDE-FORMING CURABLE FILM, OPTICAL-TRANSMITTING FLEXIBLE PRINTED CIRCUIT, AND ELECTRONIC INFORMATION DEVICE - An optical waveguide of excellent flex resistance which is to be formed on the surface of a flexible printed circuit is obtained by using an epoxy resin composition includes (A) a liquid epoxy compound, (B) a solid epoxy compound, and (C) a cationic curing initiator, wherein as the liquid epoxy compound (A), (A1) a liquid epoxy compound represented by general formula (I) below is included: | 02-09-2012 |
Patent application number | Description | Published |
20090212385 | SEMICONDUCTOR DEVICE INCLUDING VANADIUM OXIDE SENSOR ELEMENT WITH RESTRICTED CURRENT DENSITY - In a semiconductor device including a semiconductor substrate and at least one sensor element made of vanadium oxide formed over the semiconductor substrate, the sensor element is designed so that a density of a current flowing through the sensor element is between 0 and 100 μA/μm2. | 08-27-2009 |
20100258874 | SEMICONDUCTOR DEVICE - A distance “a” from a first gate electrode of a first transistor of a high-frequency circuit to a first contact is greater than a distance “b” from a second electrode of a second transistor of a digital circuit to a second contact. The first contact is connected to a drain or source of the first transistor, and the second contact is connected to a drain or source of the second transistor. | 10-14-2010 |
20100265024 | SEMICONDUCTOR DEVICE - In a semiconductor device, a first semiconductor chip includes a first circuit and a first inductor, and a second semiconductor chip includes a second circuit and chip-side connecting terminals. An interconnect substrate is placed over the first semiconductor chip and the second semiconductor chip. The interconnect substrate includes a second inductor and substrate-side connecting terminals. The second inductor is located above the first inductor. The chip-side connecting terminals and the two substrate-side connecting terminals are connected through first solder balls. | 10-21-2010 |
20130099340 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, SIGNAL TRANSMISSION/RECEPTION METHOD USING SUCH SEMICONDUCTOR DEVICE, AND TESTER APPARATUS - A semiconductor device includes a substrate, a bonding pad provided above the substrate, a first signal transmitting/receiving portion provided above the substrate and below the bonding pad, and a transistor provided over the substrate. The transistor is connected to the first signal transmitting/receiving portion. | 04-25-2013 |
20130327838 | INTERFACE IC AND MEMORY CARD INCLUDING THE SAME - A memory card includes a memory that stores data, a driver that transmits the data received from the memory, and at least one transmitter that transmits the data received from the driver to a receiver provided in an external main unit. The driver and the at least one transmitter are provided in a single IC (integrated circuit) chip and are not overlapped with each other in a planar view. | 12-12-2013 |
20140191363 | EXTERNAL STORAGE DEVICE AND METHOD OF MANUFACTURING EXTERNAL STORAGE DEVICE - An external storage device including an interconnect substrate having a contact type external terminal, at least one semiconductor chip disposed over a first surface of the interconnect substrate, and a sealing resin layer which seals the at least one semiconductor chip and does not cover the external terminal. The at least one semiconductor chip includes a storage device, an inductor being connected to the storage device, a driver circuit configured to control the inductor and an interconnect layer. The interconnect layer is formed at a first surface of the semiconductor chip and includes the inductor. The first surface of the semiconductor chip is other than facing the first surface of the interconnect substrate, and the inductor and the driver circuit are connected to each other through the interconnect layer. | 07-10-2014 |
20140246743 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, SIGNAL TRANSMISSION/RECEPTION METHOD USING SUCH SEMICONDUCTOR DEVICE, AND TESTER APPARATUS - A semiconductor device includes a substrate, an internal circuit including a plurality of transistors provided over the substrate, an insulating film provided over the substrate, a bonding pad provided over the insulating film, an inductor being formed in the insulating film, the inductor carrying out a signal transmission/reception to/from an external device in a non-contact manner by an electromagnetic induction and being electrically coupled to the internal circuit. The inductor includes a first conducting layer, and the bonding pad includes a second conducting layer. The first conducting layer includes a lower level layer than the second conducting layer in a thickness direction of the substrate. Ina plan view, the inductor includes a first portion overlapping the bonding pad and a second portion not overlapping the bonding pad. | 09-04-2014 |
20140284709 | SEMICONDUCTOR DEVICE - A buried layer of a second conductivity type and a lower layer of a second conductivity type are formed in a drift layer. A boundary insulating film is formed in the boundary between the lateral portion of the buried layer of a second conductivity type and the drift layer. The lower layer of a second conductivity type is in contact with the lower end of the buried layer of a second conductivity type and the lower end of the boundary insulating film. The buried layer of a second conductivity type is electrically connected to a source electrode. A high-concentration layer of a second conductivity type is formed in the surface layer of the buried layer of a second conductivity type. | 09-25-2014 |
20140312440 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of the present invention is to suppress an error in the value detected by a pressure sensor, which may be caused when environmental temperature varies. A semiconductor substrate has a first conductivity type. A semiconductor layer is formed over a first surface of the semiconductor substrate. Each of resistance parts has a second conductivity type, and is formed in the semiconductor layer. The resistance parts are spaced apart from each other. A separation region is a region of the first conductivity type formed in the semiconductor layer, and electrically separates the resistance parts from each other. A depressed portion is formed in a second surface of the semiconductor substrate, and overlaps the resistance parts, when viewed planarly. The semiconductor layer is an epitaxial layer. | 10-23-2014 |
20140319691 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip having a multilayer interconnect, a first spiral inductor formed in the multilayer interconnect, and a second spiral inductor formed in the multilayer interconnect. The first spiral inductor and the second spiral inductor collectively include a line, the line being spirally wound in a first direction in the first spiral inductor toward outside of the first spiral inductor, and being spirally wound in a second direction in the second spiral inductor toward inside of the second spiral inductor. The first direction and the second direction are opposite directions. | 10-30-2014 |
Patent application number | Description | Published |
20130056849 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip having a multilayer interconnect, a first spiral inductor and a second spiral inductor formed in the multilayer interconnect, and an interconnect substrate formed over the semiconductor chip and having a third spiral inductor and a fourth spiral inductor. The third spiral inductor overlaps the first spiral inductor in a plan view. The fourth spiral inductor overlaps the second spiral inductor in the plan view. The third spiral inductor and the fourth spiral inductor collectively include a line, the line being spirally wound in a same direction in the third spiral inductor and the fourth spiral inductor. | 03-07-2013 |
20130062731 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having a main surface and a rear surface, a transistor formed over a side of the main surface, an insulator layer formed over a side of the main surface, an inductor formed over the insulator layer and a side of the main surface, a tape overlapping the inductor and formed over a side of the main surface, and a bonding pad formed over the insulating layer and a side of the main surface. The tape is selectively formed over an area without the bonding pad. | 03-14-2013 |
20130175636 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a transistor formed over the substrate, insulating layers formed over the substrate, a multilayer wiring formed in the insulating layers, a first inductor formed in the insulating layers, and a second inductor formed over the first inductor and overlapping the first inductor. The insulating layers contain a silicon, wherein at least the two insulating layers are formed between the first inductor and the second inductor, and the first inductor and the second inductor are a spiral wiring pattern. | 07-11-2013 |
20140103487 | SEMICONDUCTOR DEVICE - A semiconductor device, includes a first substrate having a main surface and a rear surface opposing to the main surface, a first circuit including a plurality of transistors formed over the main surface, a first insulating film formed over the main surface to cover the first circuit, a first inductor formed in the first insulating film over the main surface, the first inductor being electrically connected to the first circuit; and a bonding pad formed over the main surface, the bonding pad being located at a first area, the first inductor being located at a second area, the first area being different from the second area in a plan view, and a second substrate having a main surface, a rear surface opposing to the main surface and a second inductor formed over the main surface. | 04-17-2014 |