Nakasaki
Atsushi Nakasaki, Hiroshima JP
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20130206758 | FUEL FILLER PIPE - A fuel filler pipe offering high anticorrosion performance and high fabrication accuracy is provided. Specifically, a tubular fuel filler pipe body | 08-15-2013 |
Kiyohiko Nakasaki, Shizuoka JP
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20080248058 | Plant Disease Control Agent And Method For Controlling Plant Disease - The present invention provides a plant disease control agent which is stable and safe in terms of leaving no residue and a method for controlling plant diseases using the same. The plant disease control agent comprises a fragment of an inky cap mushroom, and plant diseases are controlled by using the plant disease control agent. The plant disease control agent may be a suspension comprising the fragment of the inky cap mushroom or a solid material composed of the suspension and a carrier to which the suspension is absorbed. The inky cap mushroom is preferably | 10-09-2008 |
Kiyohiko Nakasaki, Yokohama-Shi JP
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20110177519 | Method for Detecting Functional Mold, Method for Evaluating Functional Mold-Containing Product and Primer Pair - The present invention provides a method of detecting a functional filamentous fungus, wherein the functional filamentous fungus, | 07-21-2011 |
Kiyohiko Nakasaki, Yokohoma-Shi JP
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20100212384 | Method for Producing Functional Compost, Functional Compost and Compost for Proliferation of Filamentous Fungus - The method for producing functional compost according to the invention includes: inoculating a filamentous fungus with a function, such as the | 08-26-2010 |
Masaru Nakasaki, Otsu-Shi JP
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20140236914 | CONTROLLER, INFORMATION PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique capable of efficiently performing debugging in a program and checking of soundness in a control system including a controller and a database system. A CPU unit has a communication interface for connection to a database device. The CPU unit executes a user program to call a DB connection service in accordance with an instruction included in the user program and generate a statement to access the database device. In the DB connection service, a statement according to an access instruction is generated, and the generated statement is transmitted to a database system. After that, information indicative of time until a response from the database system is received is acquired, and the acquired information is stored as a log into a memory. A support device acquires the information and displays it on a monitor. | 08-21-2014 |
20140236997 | CONTROLLER, INFORMATION PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique for facilitating debugging in a user program which operates by cooperation of a PLC and another system in a control system including a controller and another system. A CPU unit has a communication interface, executes a user program, calls DB connection service in accordance with an instruction included in the user program, and generates a statement to access a database device. In the DB connection service, operation is performed while switching a first mode and a second mode. In the first mode, a statement according to an access instruction is generated, the generated statement is transmitted to a database system, and a result of a response is sent to the user program. In the second mode, without transmitting the statement to the database device, a result of execution corresponding to the statement is sent to the user program. | 08-21-2014 |
Masaru Nakasaki, Kyoto-Shi JP
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20150254305 | CONTROL DEVICE - Provided is a technique enables programming, including that for database operations, without describing a SQL used to operate the database. A PLC ( | 09-10-2015 |
Morihiko Nakasaki, Himeji-Shi JP
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20130343949 | Steel Material for Machine Structural Use Reduced in Thermal Deformation - Disclosed is a steel material with small heat treatment deformation, comprising a machine structural steel used for components for power transmission, such as gears and shafts used in automobiles, industrial machines, and the like. The steel material comprises in mass %: C: 0.16 to 0.35%; Si: 0.10 to 1.50%; Mn: 0.10 to 1.20%; P: 0 to 0.030%; S: 0 to 0.030%; Cr: 1.3 to 2.5%; Cu: 0 to 0.30%; Al: 0.008 to 0.800%; O: 0 to 0.0030%; N: 0.0020 to 0.0300%; Ni: 0 to 3.00%; Mo: 0 to 0.50%; Ti: 0 to 0.200%; Nb: 0 to 0.20%; and the balance Fe and unavoidable impurities. | 12-26-2013 |
20150218682 | Machine Structural Steel Material Having Low Heat-Treatment Deformation - There is provided a steel material with small heat treatment deformation, comprising a machine structural steel used for components for power transmission, such as gears and shafts used in automobiles, industrial machines, and the like. In the steel material, the Ms point of the steel material comprising a machine structural steel, comprising in mass %: C: 0.20 to 0.30%; Si: 0.10 to 1.50%; Mn: 0.10 to 1.20%; P: 0.030% or less; S: 0.030% or less; Cr: 1.30 to 2.50%; Cu: 0.30% or less; Al: 0.008 to 0.300%; O: 0.0030% or less; and N: 0.0020 to 0.0300%; and the balance Fe and unavoidable impurities, is 460° C. or less; a ratio (J9/J1.5) of hardness J9 at a distance of 9 mm from the quenched end of the steel material to hardness J1.5 at a distance of 1.5 mm from the quenched end of the steel material, as measured by Jominy end quenching method, is in a range of from 0.70 to 0.85; and a ratio (J11/J1.5) of hardness J11 at a distance of 11 mm from the quenched end of the steel material to hardness J1.5 is in a range of from 0.67 to 0.78. | 08-06-2015 |
Ryusuke Nakasaki, Chiyoda-Ku JP
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20120180725 | CVD APPARATUS - A cold wall type CVD apparatus that can enhance a raw material yield is provided. The CVD apparatus has a raw material gas jetting unit | 07-19-2012 |
Toshio Nakasaki, Kyoto JP
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20120091555 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a support substrate including a first surface bonded to the second surfaces of the first semiconductor chip and the second semiconductor chip, and an isolation groove formed on the first surface of the support substrate. The isolation includes a pair of side surfaces continuously extending from opposing side surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the isolation groove is formed into the support substrate to extend from the first surface of the support substrate. The isolation groove has a depth less than a thickness of the support substrate. | 04-19-2012 |
20140335659 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a support substrate including a first surface bonded to the second surfaces of the first semiconductor chip and the second semiconductor chip, and an isolation groove formed on the first surface of the support substrate. The isolation includes a pair of side surfaces continuously extending from opposing side surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the isolation groove is formed into the support substrate to extend from the first surface of the support substrate. The isolation groove has a depth less than a thickness of the support substrate. | 11-13-2014 |
Yasushi Nakasaki, Kanagawa-Ken JP
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20080305647 | Method for Manufacturing a Semiconductor Device - It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower. | 12-11-2008 |
20110241101 | SEMICONDUCTOR MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory element includes a semiconductor layer, a tunnel insulator provided on the semiconductor layer, a charge accumulation film provided on the tunnel insulator having a film thickness of 0.9 nm or more and 2.8 nm or less and the charge accumulation film containing cubic HfO | 10-06-2011 |
Yasushi Nakasaki, Kanagawa JP
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20090242958 | NAND-TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor. The NAND-type nonvolatile semiconductor memory device has, on a semiconductor substrate, a plurality of memory cell transistors connected to each other in series and a select transistor. The memory cell transistor includes a first insulating film on the semiconductor substrate, a charge trapping layer, a second insulating film made of aluminum oxide, | 10-01-2009 |
20110266612 | NAND-TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor. The NAND-type nonvolatile semiconductor memory device has, on a semiconductor substrate, a plurality of memory cell transistors connected to each other in series and a select transistor. The memory cell transistor includes a first insulating film on the semiconductor substrate, a charge trapping layer, a second insulating film made of aluminum oxide, | 11-03-2011 |
20120091420 | NONVOLATILE RESISTANCE CHANGE DEVICE - According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner. | 04-19-2012 |
Yasushi Nakasaki, Yokohama JP
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20150380641 | SEMICONDUCTOR DEVICE AND DIELECTRIC FILM - A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a dielectric film provided between the first and the second conductive layers. The dielectric film including a fluorite-type crystal and a positive ion site includes Hf and/or Zr, and a negative ion site includes O. In the dielectric film, parameters a, b, c, p, x, y, z, u, v and w satisfy a predetermined relation. The axis length of the a-axis, b-axis and c-axis of the original unit cell is a, b, and c, respectively. An axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, the remainder is b-axis. The parameters x, y, z, u, v and w are values represented using the parameter p. | 12-31-2015 |