Patent application number | Description | Published |
20090261248 | ION BEAM APPARATUS AND METHOD EMPLOYING MAGNETIC SCANNING - A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line. | 10-22-2009 |
20110089321 | ION BEAM APPARATUS AND METHOD EMPLOYING MAGNETIC SCANNING - A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line. | 04-21-2011 |
Patent application number | Description | Published |
20090046029 | ANTENNA DEVICE - An antenna device according to the present invention includes; a plurality of antenna elements; a line which is electro-magnetically connected to each of the antenna elements and is branched from at least one branch point in the line; and filters formed in the line between a first branch point and each of said plurality of antenna elements. Here, the first branch point is the electrically farthest branch point from each of the antenna elements among all branch points. | 02-19-2009 |
20090153433 | ANTENNA DEVICE - An antenna device according to this invention having: a transmission antenna which is the first antenna element formed on a surface of a substrate; and a receiving antenna which is the second antenna element formed on the surface of the substrate includes a photonic crystal structure between the transmission antenna which is the first antenna element and the receiving antenna which is the second antenna element. | 06-18-2009 |
20090256777 | PLANAR ANTENNA DEVICE AND RADIO COMMUNICATION DEVICE USING THE SAME - Provided a practical planar antenna device which has antenna elements facing each other, in which electrical power is fed between the antenna elements. The first feeding point is provided near an end of the first antenna element, which faces the opposite antenna element. The second feeding point is provided near an outer end of the second antenna element, by providing a second slit longer than the distance from the end of the second antenna element to its center. Since the feeding points are provided at the same level, the same electric field is excited in the two antenna elements in phase. The planar antenna device, to which electrical power is fed from the facing sides of the pair of opposite antenna elements, saves a bend conventionally required in a feed line, thereby allowing a wiring area to be smaller than in the conventional method. | 10-15-2009 |
Patent application number | Description | Published |
20140178186 | BLOWER FAN - In a blower fan according to a preferred embodiment of the present invention, a side wall portion includes a tongue portion arranged to project between an air outlet and an impeller. A side surface of the tongue portion includes a tongue portion tip arranged to touch a first imaginary plane including a central axis; a first tongue portion side surface arranged to extend from the tongue portion tip along an outer envelope of the impeller; and a second tongue portion side surface arranged to extend from the tongue portion tip toward a side edge, the side edge being a line of intersection of the air outlet and the side wall portion. The second tongue portion side surface is arranged to cross a second imaginary plane including the central axis and touching the side edge. | 06-26-2014 |
20140178194 | BLOWER FAN - In a blower fan according to a preferred embodiment of the present invention, a side wall portion includes a tongue portion arranged to project between an air outlet and an impeller. A side surface of the tongue portion includes a tongue portion tip arranged to touch a first imaginary plane including a central axis; a first tongue portion side surface arranged to extend from the tongue portion tip along an outer envelope of the impeller; and a second tongue portion side surface arranged to extend from the tongue portion tip toward a side edge, the side edge being a line of intersection of the air outlet and the side wall portion. The second tongue portion side surface is arranged to cross a second imaginary plane including the central axis and touching the side edge. | 06-26-2014 |
20140219834 | BLOWER FAN - A lower plate includes a lower air inlet arranged radially outward of a bearing portion. In a plan view, a plane is divided into four regions by a first straight line which is parallel to an air outlet and crosses a central axis and a second straight line which is perpendicular to the air outlet and crosses the central axis, and one of the four regions in which a tongue portion is arranged is a first region, followed by a second region, a third region, and a fourth region in this order in a rotation direction of the blades. The air outlet is arranged to extend over both the first and fourth regions. | 08-07-2014 |
Patent application number | Description | Published |
20090096562 | HIGH-VOLTAGE TRANSFORMER - A high-voltage transformer includes a core, a coil part, a diode holder, a component block, and a substantially rectangular parallelepiped shaped outer case for accommodating the coil part, the diode holder, and the component block. The coil part includes a coil bobbin into which the core is inserted, and windings wound around the coil bobbin. The diode block includes a plurality of diodes connected to the windings, and a member for holding the diodes. The component block includes electrical components connected to the windings, and a member on which the electrical components are fixedly arranged. The high-voltage transformer is low-profile and small in size. | 04-16-2009 |
20090108975 | HIGH-VOLTAGE TRANSFORMER - A high-voltage transformer includes a core, a secondary coil bobbin surrounding the core, and a secondary winding which is wound on the secondary coil bobbin. The secondary winding includes a first partial secondary winding and a second partial secondary winding which are wound on the secondary coil bobbin. Between the first and second partial secondary windings of the secondary winding, there are provided insulators and parallel-connected diodes. The diodes are arranged in a direction away from the core. These diodes are not required to be resistant to high current, thus achieving a compact high-voltage transformer. | 04-30-2009 |
Patent application number | Description | Published |
20130224956 | SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit. | 08-29-2013 |
20150013732 | SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit. | 01-15-2015 |
20150060406 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate. | 03-05-2015 |
20150060407 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate. | 03-05-2015 |
20150068557 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - A substrate treatment method is provided, which includes a liquid film retaining step of retaining a liquid film of a treatment liquid on a major surface of a substrate, and a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the liquid film retaining step, wherein an output of the heater is changed from a previous output level in the heater heating step. | 03-12-2015 |
20150072078 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - A substrate treatment method is provided which includes: a treatment liquid supplying step of supplying a treatment liquid to a major surface of a substrate; a substrate rotating step of rotating the substrate while retaining a liquid film of the treatment liquid on the major surface of the substrate; a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the substrate rotating step; and a heat amount controlling step of controlling the amount of heat to be applied per unit time to a predetermined portion of the liquid film from the heater according to the rotation speed of the substrate in the heater heating step. | 03-12-2015 |
Patent application number | Description | Published |
20120018836 | SCHOTTKY BARRIER DIODE - A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a Schottky metal formed to contact the top surface of the semiconductor layer including inner surfaces of the trenches. | 01-26-2012 |
20120147717 | METHOD OF BURN-IN TESTING FOR THERMALLY ASSISTED HEAD - A plurality of laser diode units is tested in a bar state, each of the laser diode units in which a laser diode that includes a first electrode and a second electrode formed on surfaces facing each other and that is mounted on a mounting surface of a submount such that the first electrode faces the mounting surface of the submount. The method includes preparing a bar in which mounting areas each of which includes the laser diode unit formed thereon and dicing margins for separating the bar into the separate laser diode units are alternatively aligned along a longitudinal direction wherein a first pad electrically connected with the first electrode of the laser diode is disposed on the mounting surface of each of the mounting areas of the submounts and a second pad electrically connected to the first pad of either one of the mounting areas that are adjacent to the dicing margin is disposed on the mounting surface of each of the dicing margins of the submounts: contacting sheet-shaped probes to the second electrode and the second pad at a slantwise angle with respect to the second electrode and the second pad, and pressing the probes to the second electrode and the second pad while deforming the probes; and providing a potential difference between the second electrode and the second pad through the probes so that the laser diode emits laser light. | 06-14-2012 |
20130068936 | SUB-MOUNT AND LIGHT-EMITTING ELEMENT MODULE - A sub-mount having a photodiode region, includes a photodiode which has a first conductivity-type layer arranged in a surface portion of the sub-mount of the photodiode region to form a light-receiving surface and a second conductivity-type region arranged below the first conductivity-type layer and is configured to receive at the light-receiving surface a light emitted from a light-emitting element and convert the light into a photocurrent. A peak light-receiving wavelength at which the photocurrent of the photodiode becomes its maximum value is more than or equal to a minimum emission wavelength of the light-emitting element and less than or equal to a maximum emission wavelength of the light-emitting element. | 03-21-2013 |
20140117487 | SCHOTTKY BARRIER DIODE - A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a Schottky metal formed to contact the top surface of the semiconductor layer including inner surfaces of the trenches. | 05-01-2014 |