Patent application number | Description | Published |
20120257452 | NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME - A nonvolatile memory device includes a plurality of memory blocks, and a pass transistor array transmitting a plurality of drive signals to a selected memory block among the plurality of memory blocks in response to a block select signal. The pass transistor array includes high voltage transistors including one common drain and two sources formed in one active region and one of the plurality of drive signals transmitted to the common drain is transmitted to different memory blocks through the two sources. | 10-11-2012 |
20140016410 | MEMORY DEVICE AND METHOD ADJUSTING READ VOLTAGE ACCORDING TO VARYING THRESHOLD VOLTAGE DISTRIBUTIONS - A memory device comprises a memory cell that is in one of an erase state and first through N-th program states (N>2). The memory device can be read by determining a first read voltage between the erase state and the first program state based on variations of respective threshold voltage distributions of the erase state and the first program state, and determining one among second through N-th read voltages based on variations in respective threshold voltage distributions of two adjacent program states among the first through N-th program states, and determining remaining read voltages among the second through N-th read voltages based on the one read voltage. | 01-16-2014 |
20140022853 | MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF CONTROLLING READ VOLTAGE OF THE MEMORY DEVICE - A memory device includes a memory cell array and a page buffer unit. The memory cell array includes multiple memory cells. The page buffer unit performs a logic operation on data sequentially read from the memory cells at different voltage levels, based on the read data and a read direction of applying the different voltage levels. | 01-23-2014 |
20140029355 | MEMORY DEVICE AND METHOD OF DETERMINING READ VOLTAGE OF MEMORY DEVICE - A method of operating a memory device comprises applying an initial read voltage to a selected wordline to perform a read operation on memory cells connected to the selected wordline, determining whether a read failure occurs with respect to one or more of the memory cells, upon determining that a read failure has occurred with respect to some of the memory cells, determining threshold voltage distribution information for distinct groups of the memory cells, and determining a new read voltage to be applied to the selected wordline based on the threshold voltage distribution information. | 01-30-2014 |
20140129903 | METHOD OF OPERATING MEMORY DEVICE - A method of operating a memory device includes changing a first read voltage, which determines a first voltage state or a second voltage state, to a voltage within a first range and determining the voltage as a first select read voltage, and changing a second read voltage, which is used to determine whether the data stored in the memory cells is a third different voltage state or a fourth different voltage state, to a voltage within a second different range and determining the voltage as a second select read voltage. The first voltage state overlaps the second voltage. The third voltage state overlaps the fourth voltage state. A difference between a voltage at an intersection of the third and fourth voltage states and the second read voltage is greater than a difference between a voltage at an intersection of the first and second voltage states and the first read voltage. | 05-08-2014 |
20140153330 | METHOD FOR OPERATING NON-VOLATILE MEMORY DEVICE AND MEMORY CONTROLLER - An operating method for a non-volatile memory device includes applying first and second read voltages to a first word line to perform a read operation; counting first memory cells each having a threshold voltage belonging to a first voltage range between the first read voltage and the second read voltage; applying a third read voltage to the first word line sequentially after applying the second read voltage to count second memory cells each having a second threshold voltage belonging to a voltage range between the second read voltage and the third read voltage; comparing the number of first memory cells counted and the number of second memory cells counted; determining a fourth read voltage based on a result of the comparing; and applying the fourth read voltage to the first word line sequentially after applying the third read voltage. | 06-05-2014 |
20150029796 | MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF CONTROLLING READ VOLTAGE OF THE MEMORY DEVICE - A memory device includes a memory cell array having a plurality of memory cells, and a page buffer unit including a plurality of page buffers configured to store a plurality of pieces of data sequentially read from some of the plurality of memory cells at different read voltage levels, respectively, and to perform a logic operation on the plurality of pieces of data, respectively. The memory device further includes a counting unit configured to count the number of memory cells that exist in each of a plurality of sections defined by the different read voltage levels, based on results of the logic operation | 01-29-2015 |
20150179264 | NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME - A nonvolatile memory device includes a plurality of memory blocks, and a pass transistor array transmitting a plurality of drive signals to a selected memory block among the plurality of memory blocks in response to a block select signal. The pass transistor array includes high voltage transistors including one common drain and two sources formed in one active region and one of the plurality of drive signals transmitted to the common drain is transmitted to different memory blocks through the two sources. | 06-25-2015 |