Patent application number | Description | Published |
20080213628 | Perpendicular recording media with Ta transition layer to improve magnetic and corrosion resistance performances and method of manufacturing the same - A perpendicular magnetic recording medium comprising a substrate, an underlayer, a Ta-containing seedlayer, a magnetic layer, wherein the underlayer comprises a soft magnetic material and the Ta-containing seedlayer is between the underlayer and the magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed. | 09-04-2008 |
20100007989 | HIGH DENSITY GRANULAR PERPENDICULAR RECORDING MEDIA FOR MECHANICAL RELIABILITY AND CORROSION RESISTANCE - An embodiment of the invention relates to a perpendicular magnetic recording medium comprising (1) a substrate, (2) an interlayer comprising hexagonal columns and (3) a magnetic layer, wherein the magnetic layer is deposited applying a bias voltage to the substrate such that the magnetic layer comprises magnetic grains having substantially no sub-grains within the magnetic layer, and the magnetic layer has perpendicular magnetic anisotropy. | 01-14-2010 |
20100020441 | METHOD AND MANUFACTURE PROCESS FOR EXCHANGE DECOUPLED FIRST MAGNETIC LAYER - A perpendicular magnetic recording medium having a dual-layer magnetic film is disclosed. The bottom layer is completely exchange decoupled, and the top layer contains a certain amount of exchange coupling optimized for recording performance. Preferably, the bottom magnetic layer contains stable oxide material (for example, TiO | 01-28-2010 |
20100124671 | LOW COUPLING OXIDE MEDIA (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm | 05-20-2010 |
20110076515 | Low-Coupling Oxide Media (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer. | 03-31-2011 |
20130045394 | Low-Coupling Oxide Media (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer. | 02-21-2013 |
20130133727 | SEMICONDUCTOR GRAIN MICROSTRUCTURES FOR PHOTOVOLTAIC CELLS - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy. | 05-30-2013 |
20130228217 | SEMICONDUCTOR GRAIN AND OXIDE LAYER FOR PHOTOVOLTAIC CELLS - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited. | 09-05-2013 |
Patent application number | Description | Published |
20090211898 | MAGNETIC RECORDING MEDIA HAVING FIVE ELEMENT ALLOY DEPOSITED USING PULSED DIRECT CURRENT SPUTTERING - CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB-X, to enhance the grain segregation. The five element CoCrPtB-X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB-X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance. | 08-27-2009 |
20090235983 | Interlayer Design for Epitaxial Growth of Semiconductor Layers - An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells. | 09-24-2009 |
20100081012 | PERPENDICULAR MEDIA WITH Cr-DOPED Fe-ALLOY-CONTAINING SOFT UNDERLAYER (SUL) FOR IMPROVED CORROSION PERFORMANCE - A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed. | 04-01-2010 |
20100209739 | MAGNETIC STORAGE MEDIA WITH Ag, Au-CONTAINING MAGNETIC LAYERS - A magnetic recording medium having a Au, Ag-containing magnetic layer having Co, Cr, Ag and Au; the magnetic recording layer having Co-containing magnetic grains surrounded by substantially nonmagnetic Cr-containing grain boundaries; wherein said Ag and said Au are substantially immiscible in the Co-containing magnetic grains is disclosed. | 08-19-2010 |
20100266755 | FERROMAGNETICALLY COUPLED MAGNETIC RECORDING MEDIA - A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction. | 10-21-2010 |
20110011460 | Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same - In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te). | 01-20-2011 |
20110174363 | Control of Composition Profiles in Annealed CIGS Absorbers - Particular embodiments of the present disclosure relate to the use of sputtering, and more particularly magnetron sputtering, in forming absorber structures, and particular multilayer absorber structures, that are subsequently annealed to obtain desired composition profiles across the absorber structures for use in photovoltaic devices. | 07-21-2011 |
20120070694 | Perpendicular Media with Cr-Doped Fe-Alloy Containing Soft Underlayer (SUL) - A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed. | 03-22-2012 |
20120192936 | Thin-Film Photovoltaic Structures Including Semiconductor Grain and Oxide Layers - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer may be disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited. | 08-02-2012 |
20120238053 | Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding | 09-20-2012 |
20130045396 | FERROMAGNETICALLY COUPLED MAGNETIC RECORDING MEDIA - A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction. | 02-21-2013 |
20130213478 | Enhancing the Photovoltaic Response of CZTS Thin-Films - In one embodiment, a method includes depositing a precursor material outwardly from a substrate, introducing a source-material into proximity with the precursor material, depositing a dopant, and annealing the precursor layer in proximity with of the source-material layer. The precursor material may include Cu, Zn, and Sn, and one or more of S or Se. The source material may include Sn and one or more of S or Se. The dopant may be deposited in sufficient proximity to the precursor material such that the average grain size of the precursor material is increased by the presence of the dopant and is greater than 200 nm. The annealing of the precursor material may be performed in a constrained volume. | 08-22-2013 |
20130217175 | Closed-Space Sublimation Process for Production of CZTS Thin-Films - In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume. | 08-22-2013 |
20130217176 | Closed-Space Annealing of Chalcogenide Thin-Films with Volatile Species - In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing. | 08-22-2013 |
20130217211 | Controlled-Pressure Process for Production of CZTS Thin-Films - In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate and then annealing the precursor layer in the presence of a gaseous phase comprising Sn(S, Se), where the partial pressure of each component of the gaseous phase is kept approximately constant over substantially all of the surface of the precursor layer. | 08-22-2013 |
20130217214 | Closed-Space Annealing Process for Production of CIGS Thin-Films - In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing. | 08-22-2013 |
20130276888 | Reverse Stack Structures for Thin-Film Photovoltaic Cells - In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate. | 10-24-2013 |
20140178714 | Method and Manufacture Process for Exchange Decoupled First Magnetic Layer - A perpendicular magnetic recording medium having a dual-layer magnetic film is disclosed. The bottom layer is completely exchange decoupled, and the top layer contains a certain amount of exchange coupling optimized for recording performance. Preferably, the bottom magnetic layer contains stable oxide material (for example, TiO | 06-26-2014 |
20140356649 | FEROMAGNETICALLY COUPLED MAGNETIC RECORDING MEDIA - A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high M | 12-04-2014 |