Patent application number | Description | Published |
20080302962 | Charged particle beam apparatus - The invention provides a charged particle beam apparatus capable of preventing image errors in a display image and capturing a clear display image. A display image displayed on a display unit has a rectangular shape having sides that are substantially parallel to coordinate axes of a rectangular coordinate system determined by wafer alignment. A charged particle beam is radiated onto an area including a display image in a direction that is not parallel to the coordinate axes of the reference rectangular coordinate system to scan the area. Then, among image information obtained by scanning, only information of a position within the display image is displayed on the image display unit. In this way, a clear display image without brightness variation is obtained. | 12-11-2008 |
20090071605 | Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor - Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device. | 03-19-2009 |
20090101817 | CHARGED PARTICLE APPLICATION APPARATUS - The present invention provides a highly sensitive, thin detector useful for observing low-voltage, high-resolution SEM images, and provides a charged particle beam application apparatus based on such a detector. The charged particle beam application apparatus includes a charged particle irradiation source, a charged particle optics for irradiating a sample with a charged particle beam emitted from the charged particle irradiation source, and an electron detection section for detecting electrons that are secondarily generated from the sample. The electron detection section includes a diode device that is a combination of a phosphor layer, which converts the electrons to an optical signal, and a device for converting the optical signal to electrons and subjecting the electrons to avalanche multiplication, or includes a diode device having an electron absorption region that is composed of at least a wide-gap semiconductor substrate with a bandgap greater than 2 eV. | 04-23-2009 |
20090121158 | APPARATUS AND METHOD FOR SPECIMEN FABRICATION - A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed. | 05-14-2009 |
20090140143 | CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREFOR - Potentials at a plurality of points on a diameter of a semiconductor wafer | 06-04-2009 |
20090146057 | ELECTRON BEAM MEASUREMENT APPARATUS - The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns. | 06-11-2009 |
20090152462 | Gas field ionization ion source, scanning charged particle microscope, optical axis adjustment method and specimen observation method - It is an object of the present invention to improve the stability of a gas field ionization ion source. | 06-18-2009 |
20090256076 | CHARGED PARTICLE BEAM APPARATUS PERMITTING HIGH-RESOLUTION AND HIGH-CONTRAST OBSERVATION - A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply. Thus, whether landing energy of an electron beam varies widely, the electron beam can be focused with the electromagnetic superposition type objective lens approached to the sample. | 10-15-2009 |
20100059676 | CHARGED PARTICLE BEAM APPARATUS - Disclosed herewith is a charged particle beam apparatus capable of controlling each of the probe current and the objective divergence angle to obtain a desired probe current and a desired objective divergence angle in accordance with the diameter of the subject objective aperture. The apparatus is configured to include an objective aperture between first and second condenser lenses to calculate and set a control value of a first condenser lens in accordance with the diameter of the hole of the objective aperture so as to obtain a desired probe current and calculate a control value of a second condenser lens setting device in accordance with the diameter of the hole of the objective divergence angle and the control value of the second condenser lens setting device, thereby setting the calculated control value for the second condenser lens setting device to control the objective divergence angle. | 03-11-2010 |
20110095183 | ELECTRON BEAM MEASUREMENT APPARATUS - The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns. | 04-28-2011 |
20110101223 | Electron Beam Apparatus And Electron Beam Inspection Method - An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member. | 05-05-2011 |
20110114476 | Method and apparatus for specimen fabrication - A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage. | 05-19-2011 |
20110147586 | Charged Particle Beam Device - The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction. | 06-23-2011 |
20110174974 | METHOD AND APPARATUS FOR PROCESSING A MICROSAMPLE - An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage. | 07-21-2011 |
20110204225 | ION Beam System and Machining Method - An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction. | 08-25-2011 |
20110274341 | CHARGED BEAM DEVICE - In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun ( | 11-10-2011 |
20120004879 | CHARGED PARTICLE APPARATUS, SCANNING ELECTRON MICROSCOPE, AND SAMPLE INSPECTION METHOD - An object of the invention is to be able to select easily and quickly inspection recipes which are appropriate to samples from any number of inspection recipes. A calculating device displays a plurality of inspection recipes on the GUI. An inspection recipe includes settings for controlling charged particle columns which irradiate charged particles on samples with a plurality of characteristics. Plural inspection recipes are arranged and displayed on a coordinate system which is specified by a plurality of axes having characteristic values (robustness variable of charge up, throughput of defect inspection, and accuracy of defect inspection) which have mutually trade-off relationships. | 01-05-2012 |
20120119085 | SPECIMEN POTENTIAL MEASURING METHOD, AND CHARGED PARTICLE BEAM DEVICE - The present invention has an object to perform specimen charge measurement or focusing at a high speed and with high precision also for a specimen in which fixed charge and induced charge may be mixedly present. | 05-17-2012 |
20120119087 | CHARGED-PARTICLE MICROSCOPE - A charged-particle-beam device is characterized in having a control value for an aligner coil ( | 05-17-2012 |
20120261574 | Electron Beam Apparatus and Electron Beam Inspection Method - An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member. | 10-18-2012 |
20120273692 | METHOD AND APPARATUS FOR PROCESSING A MICROSAMPLE - An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage. | 11-01-2012 |
20120280126 | CHARGED PARTICLE BEAM APPARATUS PERMITTING HIGH RESOLUTION AND HIGH-CONTRAST OBSERVATION - A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply. | 11-08-2012 |
20120286160 | CHARGED PARTICLE INSTRUMENT - A charged particle instrument including a controlling and operating unit for controlling a charged particle source, deflecting means, and focus changing means and making a data for an image by an electric signal detected by a detector, and a recording unit for preserving a correction coefficient registered at each image-acquisition, in which the controlling and operating unit acquires plural images while changing a focus, and controls an optical condition such that a landing angle of a charged particle beam becomes perpendicular when an image for measurement is acquired on the basis of a position shift amount of a mark in the image and a correction coefficient registered to the recording unit. | 11-15-2012 |
20130026361 | PATTERN EVALUATION METHOD, DEVICE THEREFOR, AND ELECTRON BEAM DEVICE - An amount of pattern position displacement between observation images acquired by irradiating from two different directions is changed depending on beam deflection for moving an image acquisition position. In a pattern evaluation method that measures astigmatic difference or focus position displacement having a small amount of dose at a high speed using parallax caused by the tilted beam, a correction value obtained in advance by measurement is reflected in an amount of pattern position displacement between observation images obtained by irradiating from at least two different directions and generated in accordance with the amount of beam deflection for moving an image acquisition position. A processing unit calculates an amount of correction of an amount of pattern position displacement depending on beam deflection of a beam deflecting unit for moving an image acquisition position on the sample at a high speed. | 01-31-2013 |
20130087704 | GAS FIELD IONIZATION ION SOURCE, SCANNING CHARGED PARTICLE MICROSCOPE, OPTICAL AXIS ADJUSTMENT METHOD AND SPECIMEN OBSERVATION METHOD - A gas field ionization ion source (GFIS) is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. It may be possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it may be possible to reduce the physical vibration of the cooling means. Consequently, it may be possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS. | 04-11-2013 |
20130126733 | Charged Particle Beam Microscope - This charged particle beam microscope is characterized by being provided with selection means ( | 05-23-2013 |
20130175447 | Scanning Electron Microscope - Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector ( | 07-11-2013 |
20130228701 | CHARGED PARTICLE BEAM APPARATUS PERMITTING HIGH RESOLUTION AND HIGH-CONTRAST OBSERVATION - A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply. | 09-05-2013 |
20130270435 | ELECTRON BEAM DEVICE - The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution. | 10-17-2013 |
20140197313 | CHARGED-PARTICLE MICROSCOPE - A charged-particle-beam device is characterized in having a control value for an aligner coil ( | 07-17-2014 |
20140326879 | CHARGED PARTICLE BEAM APPARATUS PERMITTING HIGH-RESOLUTION AND HIGH-CONTRAST OBSERVATION - A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply. | 11-06-2014 |