Moo-Sung
Moo-Sung Kim, Sungnam City KR
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20080318443 | Plasma enhanced cyclic deposition method of metal silicon nitride film - The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a nitrogen source gas as precursors. The deposition method for forming a metal silicon nitride film on a substrate comprises steps of: pulsing a metal amide precursor; purging away the unreacted metal amide; introducing nitrogen source gas into reaction chamber under plasma atmosphere; purging away the unreacted nitrogen source gas; pulsing a silicon precursor; purging away the unreacted silicon precursor; introducing nitrogen source gas into reaction chamber under plasma atmosphere; and purging away the unreacted nitrogen source gas. | 12-25-2008 |
20090130414 | Preparation of A Metal-containing Film Via ALD or CVD Processes - Methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films are described herein. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas. | 05-21-2009 |
20100075067 | Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD - A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established. | 03-25-2010 |
Moo-Sung Kim, Suwon-Si KR
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20090023681 | METHOD OF USING BETA-GLUCAN FROM SCHIZOPHYLLUM COMMUNE - Disclosed herein is a method for high-yield production of | 01-22-2009 |
20110281940 | METHOD OF PREPARATION AN INCLUSION-COMPLEX COMPRISING HYDROPHOBIC PHYSIOLOGICAL ACTIVATION MATERIAL INCLUDING WITH CYCLODEXTRIN AND ITS USE - Disclosed herein are a method for preparation of an inclusion-complex including a physiologically active hydrophobic substance in cjclodextrin and a derivative thereof, and use of the inclusion-complex prepared by the same. More particularly, the present invention provides a method for preparing an inclusion-complex, which includes agitating cjclodextrin and a derivative thereof in an agitator at high speed, spraying a physiologically active hydrophobic substance dissolved in alcohol onto the agitator, and drying and crushing the mixture obtained from the preceding step and, in addition, use of the prepared inclusion-complex. The present inventive method has merits of reduced inclusion time and increased inclusion rate. The prepared inclusion-complex has excellent cell and collagen proliferation effects compared to physiologically active hydrophobic substances which were not inclusion processed, thereby being used in production of a cosmetic composition with improved anti-wrinkle and anti-ageing effects. | 11-17-2011 |
Moo-Sung Kim, Gyunggi-Do KR
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20140308802 | METHOD OF MAKING A MULTICOMPONENT FILM - Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane. | 10-16-2014 |