Patent application number | Description | Published |
20080251734 | Ion Implantation Apparatus and Method of Converging/Shaping Ion Beam Used Therefor - An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner. | 10-16-2008 |
20080258074 | BEAM PROCESSING APPARATUS - In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes. | 10-23-2008 |
20140134833 | ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD - An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration. | 05-15-2014 |
20140150723 | ION IMPLANTATION APPARATUS - An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam. | 06-05-2014 |
20140345522 | HIGH-ENERGY ION IMPLANTER - A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter. | 11-27-2014 |
20140352615 | HIGH-ENERGY ION IMPLANTER - A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter. | 12-04-2014 |
20140353517 | HIGH-ENERGY ION IMPLANTER - A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field. | 12-04-2014 |
20140366801 | HIGH-ENERGY ION IMPLANTER - A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets. | 12-18-2014 |
20140374617 | HIGH-FREQUENCY ACCELERATION TYPE ION ACCELERATION AND TRANSPORTATION APPARATUS HAVING HIGH ENERGY PRECISION - A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current. | 12-25-2014 |
20150064888 | ION IMPLANTATION APPARATUS, BEAM PARALLELIZING APPARATUS, AND ION IMPLANTATION METHOD - An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens. | 03-05-2015 |