Patent application number | Description | Published |
20080283853 | Light-Emitting Diode, Light-Emitting Diode Substrate and Production Method of Light-Emitting Diode - The light-emitting diode is a light-emitting diode including a light-converting material substrate and a semiconductor layer formed on the light-converting material substrate, wherein the light-converting material substrate includes a solidified body in which at least two or more oxide phases selected from a simple oxide and a complex oxide are formed continuously and three-dimensionally entangled with each other, at least one oxide phase in the solidified body comprises a metal element capable of emitting fluorescence, and the semiconductor layer includes a plurality of compound semiconductor layers and has at least a light-emitting layer capable of emitting visible light. A light-emitting diode substrate forms a semiconductor, ensuring that the crystal-structure matching with a semiconductor for the formation of a light-emitting diode is good, a good semiconductor layer with less defects can be formed, good-efficiency light emission can be obtained from a light-emitting layer formed in the semiconductor layer, uniform florescence can be emitted by light from the light-emitting layer in the semiconductor layer, and light can be efficiently out put; and a color unevenness-free light-emitting diode using the substrate. | 11-20-2008 |
20090166667 | Substrate for Light-Emitting Diode, and Light-Emitting Diode - A substrate for light-emitting diodes, which uses no fluorescent powder, enables formation of a good light-emitting diode element, resulting in less deterioration, transmits light of the light-emitting diode element, emits light by utilizing a part of the transmitted light, and allows the transmitted light and newly emitted light to be mixed and emitted, is provided. | 07-02-2009 |
20100181897 | CERAMIC COMPOSITE FOR PHOTOTRANSFORMATION AND LIGHT EMITTING DEVICE USING THE SAME - A light-converting ceramic composite comprising a solidified body having a texture of at least two or more oxide phases being continuously and three-dimensionally entangled together, with at least one of the oxide phases being a fluorescence-emitting crystal phase, wherein the interface length between the oxide phases per 1 mm | 07-22-2010 |
Patent application number | Description | Published |
20100226561 | PARAMETER DETERMINATION ASSISTING DEVICE AND PARAMETER DETERMINATION ASSISTING PROGRAM - This invention provides a parameter determination assisting device and a parameter determination assisting program enabling a more rapid and easy determination of a parameter to be set in a processing device, which obtains a processing result by performing a process using a set of parameters defined in advance on image data obtained by imaging a measuring target object. A user can easily select an optimum parameter set when a determination result and a statistical output are displayed in a list for each of a plurality of trial parameter candidates. For instance, while trial numbers “2”, “4”, and “5”, in which the number of false detections is zero, can perform a stable process, the parameter set of the trial number “2” is comprehensively assumed as optimum since the trial number “2” can perform the process in the shortest processing time length. | 09-09-2010 |
20100226563 | MODEL IMAGE ACQUISITION SUPPORT APPARATUS, MODEL IMAGE ACQUISITION SUPPORT METHOD, AND MODEL IMAGE ACQUISITION SUPPORT PROGRAM - The present invention provides a model image acquisition support apparatus, a model image acquisition support method, and a model image acquisition support program that can easily and swiftly obtain an optimum model image for an image processing apparatus that performs matching processing based on a model image set in advance with respect to a measurement image that is obtained by imaging an object. A plurality of model image candidates, serving as candidates for model image, are extracted from a reference image obtained by imaging an object which can be a model. Matching processing with the plurality of extracted model images is executed on measurement images actually obtained by a visual sensor, so that trial results are obtained. A trial result is generated upon evaluating each of the trial results of the matching processing with the model image. An optimum model image is determined based on the evaluation result. | 09-09-2010 |
20150062172 | IMAGE PROCESSING APPARATUS - An image is displayed without impairing visibility, even in the case of a screen having a limited size. A display setting unit includes a target image display unit that displays an image of a workpiece on an LCD, an image selection unit that, in accordance with a selection operation, selects all or part of the image of the workpiece displayed on the LCD, a menu display unit that displays a menu image so as to be overlapped with the image of the workpiece in a translucent state, the menu image being made up of a plurality of parts that are partial images for displaying information or receiving an input operation, and a display switching unit that, in accordance with a switching instruction given via the operation unit, switches the size of the area occupied by the menu image on the LCD. | 03-05-2015 |
Patent application number | Description | Published |
20090242825 | IRON-BASED SOFT MAGNETIC POWDER FOR DUST CORE, PRODUCTION METHOD THEREOF, AND DUST CORE - An iron-based soft magnetic powder for dust core includes an iron-based soft magnetic matrix powder, and arranged thereon in the following order, a phosphate coating and a silicone resin coating. The phosphate coating contains P, Co, Na, and S in combination with at least one of Al and Cs. This iron powder for dust core has superior mechanical strength, in which effective insulation is achieved between iron powdery particles even when the amount of an insulating material is reduced for realizing high-density molding. The iron powder for dust core is also superior in thermal stability, so that electrical insulation is maintained even after a heat treatment at high temperatures. | 10-01-2009 |
20100212455 | IRON-BASED SOFT MAGNETIC POWDER FOR DUST CORE, METHOD FOR MANUFACTURING THE SAME, AND DUST CORE - An iron-based soft magnetic powder for dust core having a high magnetic flux density, maintaining high electric insulation even after annealing, and more excellent in the mechanical strength in which a coating film having a phosphate conversion coating film is formed on the surface thereof and the peak height for the absorption of hydroxyl groups formed at 3700 cm | 08-26-2010 |
20120104880 | AXIAL MOTOR - An axial motor includes a rotor arranged between a pair of stators with coils. In the rotor, a plurality of permanent magnets sandwiched between pairs of first magnetic materials and a plurality of second magnetic materials are alternately arranged in a rotation direction while gaps are provided therebetween. Since the permanent magnets are sandwiched by the first magnetic materials in the thus constructed axial motor, a field-weakening control can be performed. Since the second magnetic materials are provided, a reluctance torque can be generated. Further, since the gaps are provided, more magnetic fluxes generated from the permanent magnets can be caused to flow toward the coils. Therefore, the thus constructed axial motor can achieve a higher output, higher torque, higher efficiency, and miniaturization. | 05-03-2012 |
20120154083 | PRODUCTION PROCESS OF DUST CORE AND DUST CORE OBTAINED THEREBY - Provided is a dust core excellent in flux density, iron loss, and mechanical strength. | 06-21-2012 |
20120164453 | IRON-BASED SOFT MAGNETIC POWDER FOR DUST CORE, PREPARATION PROCESS THEREOF, AND DUST CORE - Provided is an iron-based soft magnetic powder for dust core having a less coercive force, which is obtained by specifying the amount of inclusions in the iron-based powder for dust core, and at the same time, capable of decreasing the coercive force of a dust core produced using the iron-based soft magnetic powder. | 06-28-2012 |
20120280776 | COMPOSITE WOUND ELEMENT AND TRANSFORMER USING SAME, TRANSFORMATION SYSTEM, AND COMPOSITE WOUND ELEMENT FOR NOISE-CUT FILTER - Disclosed is a composite wound element (Tra) which is used in a transformer or a transformation system, and used as a composite wound element for a noise-cut filter, wherein a plurality of coils ( | 11-08-2012 |
20120286909 | METHOD FOR PRODUCING DUST CORE, AND DUST CORE PRODUCED BY THE METHOD - A method produces a dust core by molding a mixture through compression molding to give a powder compact, the mixture containing an oxygen-source-releasable compound and an iron-based soft magnetic powder for powder compacts including an iron-based soft magnetic matrix powder and an insulating coating film present on the surface of the matrix powder; and heating the powder compact to oxidize at least the surface of the iron-based soft magnetic matrix powder by the action of the oxygen-source-releasable compound. The resulting dust core excels not only in mechanical strength but also in resistivity (insulation). | 11-15-2012 |
20130009508 | AXIAL GAP TYPE BRUSHLESS MOTOR - Disclosed is a brushless motor ( | 01-10-2013 |
20130181804 | IRON-BASED SOFT MAGNETIC POWDER AND PRODUCTION METHOD THEREOF - Disclosed is an iron-based soft magnetic powder obtained by preparing an iron-oxide-based soft magnetic powder through water atomization, and thermally reducing the iron-oxide-based soft magnetic powder. The iron-based soft magnetic powder has an average particle size of 100 μm or more and has an interface density of more than 0 μm | 07-18-2013 |
20130200744 | BRUSHLESS DC MOTOR AND METHOD FOR CONTROLLING THE SAME - This brushless DC motor ( | 08-08-2013 |
20140002219 | IRON BASE SOFT MAGNETIC POWDER FOR POWDER MAGNETIC CORES, FABRICATION METHOD FOR SAME, AND POWDER MAGNETIC CORE | 01-02-2014 |
Patent application number | Description | Published |
20090001497 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device includes a substrate having a PROM formed thereon in which the data memory state of the PROM is changed by the irradiation of light, and a multilayer wiring structure formed on the same side of the substrate as the PROM is formed. The multilayer wiring structure includes a transparent area, a shield area, and a PAD portion. The transparent area is formed from transparent material at a position opposite to the PROM area where the PROM is formed, and used as a light guiding path from the outside of the multilayer wiring structure to the PROM. The shield area is formed continuously from shielding materials arranged in several layers in the periphery of the transparent area. The PAD portion is formed on the outside of the shield area in regard to the transparent area, and controls the memory state of the PROM. | 01-01-2009 |
20090206410 | Semiconductor device and method for manufacturing the same - Semiconductor devices required forming a stress control film to handle different stresses on each side when optimizing the stress on the respective P channel and N channel sections. A unique feature of the semiconductor device of this invention is that P and N channel stress are respectively optimized by making use of a stress control film jointly for the P and N channels that conveys stress in different directions by utilizing the film thickness. | 08-20-2009 |
20110050891 | IMAGING DEVICE, GPS CONTROL METHOD, AND COMPUTER PROGRAM - An imaging device includes an imaging unit configured to execute processing to capture image data, a global positioning system (GPS) device configured to execute position calculation processing based on data received from a satellite, and a main controller configured to measure an imaging frequency of the imaging unit, to determine or update a control parameter as a condition for a transition of an operation state of the GPS device based on the measured imaging frequency, and to cause a transition of the operation state of the GPS device based on the determined or updated control parameter. | 03-03-2011 |
Patent application number | Description | Published |
20090127666 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND PHASE SHIFT MASK - A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance. | 05-21-2009 |
20090166746 | SEMICONDUCTOR DEVICE - A semiconductor device has a first and a second active regions of a first conductivity type disposed on a semiconductor substrate, a third and a fourth active regions of a second conductivity type disposed on the semiconductor substrate, the second and the fourth active regions having sizes larger than those of the first and the third active regions respectively, a first electroconductive pattern disposed adjacent to the first active region and having a first width, a second electroconductive pattern disposed adjacent to the second active region and having a second width larger than the first width, a third electroconductive pattern disposed adjacent to the third active region and having a third width; and a fourth electroconductive pattern disposed adjacent to the fourth active region and having a fourth width smaller than the third width. | 07-02-2009 |
Patent application number | Description | Published |
20110045246 | SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER - A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection. | 02-24-2011 |
20110266655 | SEMICONDUCTOR WAFER HAVING MULTILAYER FILM, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard. | 11-03-2011 |
20130341763 | BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF - The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method. | 12-26-2013 |
20140120695 | METHOD FOR MANUFACTURING BONDED SUBSTRATE HAVING AN INSULATOR LAYER IN PART OF BONDED SUBSTRATE - A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer. | 05-01-2014 |
Patent application number | Description | Published |
20080286937 | Manufacturing Method for Bonded Wafer - In a first ion implantation step (a1), a delamination-intended ion implantation layer | 11-20-2008 |
20080299376 | SILICON ON INSULATOR (SOI) WAFER AND PROCESS FOR PRODUCING SAME - Ion injection is performed to a single crystal silicon wafer to form an ion injection layer, with the ion injection surface of the single crystal silicon wafer and/or the surface of the transparent insulation substrate are/is processed using plasma and/or ozone. The ion injection surface of the single crystal silicon wafer and the surface of the transparent insulation substrate are bonded to each other by bringing them into close contact with each other at room temperature. A silicon on insulator (SOI) wafer is obtained by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer, to form an SOI layer on the transparent insulation substrate, and thermal processing for flattening the SOI layer surface is performed to the SOI wafer, under an atmosphere of an inert gas, a hydrogen gas, and a mixture gas of them. | 12-04-2008 |
20080305317 | SILICON ON INSULATOR (SOI) WAFER AND PROCESS FOR PRODUCING SAME - In a manufacturing method for manufacturing a silicon on insulator (SOI) wafer, an ion injection layer is formed within the wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the single crystal silicon wafer, the ion injection surface of the single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone, the ion injection surface of the single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s), and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer. | 12-11-2008 |
20080305318 | SILICON ON INSULATOR (SOI) WAFER AND PROCESS FOR PRODUCING SAME - In a manufacturing method of manufacturing a silicon on insulator (SOI) wafer, a single crystal silicon whose surface is an N region on an outer side of an OSF region, is grown and sliced to fabricate an N region single crystal silicon. An ion injection layer is formed within the N region single crystal silicon wafer by injecting a hydrogen ion or a rare gas ion from a surface of the N region single crystal silicon wafer; the ion injection surface of the N region single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone. The ion injection surface is bonded to the surface of the transparent insulation substrate by bringing them into close contact with each other at room temperature. An SOI layer is formed by mechanically peeling the single crystal silicon wafer. | 12-11-2008 |
20090203167 | Method for Manufacturing Bonded Substrate - The present invention provides a method for manufacturing a bonded substrate that is a method for manufacturing a bonded substrate where an active layer wafer is bonded to a support substrate wafer, comprising: a first step of providing a groove on an inner side on a surface of the active layer wafer along an outer peripheral portion over an entire circumference; a second step of determining a surface where the groove is formed as a bonding surface and bonding the active layer wafer to the support substrate wafer; and a third step of reducing a film thickness of the active layer wafer and removing an unbonded portion on an outer side of the groove of the active layer wafer. As a result, there is provided the method for manufacturing a bonded substrate that can simplify processes, avoid breakage, cracks, or particle generation, and manage a shape of an edge portion of an active layer wafer when reducing a film thickness of the active layer wafer. | 08-13-2009 |
Patent application number | Description | Published |
20090201006 | CONSTANT CURRENT CIRCUIT - Provided is a constant current circuit capable of supplying a stable constant current. Even when K values of NMOS transistors vary due to manufacturing fluctuations in semiconductor devices, a voltage generated across a resistor is always a threshold voltage difference between the NMOS transistors, and thus hardly varies. Even when the K values of the NMOS transistors vary due to a change in temperature, the voltage generated across the resistor is always the threshold voltage difference between the NMOS transistors, and thus hardly varies. | 08-13-2009 |
20130148444 | DATA READING DEVICE - There is disclosed a data reading device in which data of a nonvolatile storage element is reflected in a circuit to be regulated, with a minimum necessary delay width after turning a power on or after reset cancellation, and wrong writing due to a static electricity is prevented. A delay circuit is additionally disposed to output a delayed data reading signal after a signal of turning the power on or a signal of the reset cancellation is generated. A delay time T | 06-13-2013 |
20130249473 | SEMICONDUCTOR DEVICE INCLUDING CHARGING SYSTEM - The semiconductor device includes the charging system including: electric power generating unit for supplying electric power; electric power storing unit for storing electric power generated by the electric power generating unit; switch unit provided in a charging path for charging the electric power storing unit with the electric power generated by the electric power generating unit; a comparator driven by the electric power generated by the electric power generating unit for comparing a reference voltage and a stored voltage of the electric power storing unit; and a level converter provided between the comparator and the switch unit for, based on a result of a comparison made by the comparator, converting a level of a generated voltage to a level of the stored voltage and outputting a resultant to the switch unit. | 09-26-2013 |
20130250741 | ANALOG ELECTRONIC WATCH - The analog electronic watch includes: a crystal oscillator; an oscillator circuit; a frequency divider circuit; an output control circuit; a constant voltage circuit; and a cell. The constant voltage circuit and the output control circuit are powered from the cell. The oscillator circuit and the frequency divider circuit are powered from the constant voltage circuit. The constant voltage circuit is capable of outputting a first constant voltage and a second constant voltage in a switchable manner. The second constant voltage is a voltage which is equal to or lower than a cell voltage. The first constant voltage is a voltage which is smaller than the second constant voltage. The constant voltage is switched to the second constant voltage in a period of outputting the motor drive pulse. | 09-26-2013 |
20140085996 | READOUT CIRCUIT AND SEMICONDUCTOR DEVICE - Provided is a readout circuit capable of detecting inversion of retained data caused by a noise, such as static electricity. The readout circuit is configured to retain opposing data in a first latch circuit and a second latch circuit in a readout period so as to be capable of detecting an anomaly of the retained data by making use of the fact that the data in the first latch circuit and the second latch circuit are inverted in the same direction due to a noise, such as static electricity. | 03-27-2014 |
20140204720 | CONSTANT VOLTAGE CIRCUIT AND ANALOG ELECTRONIC CLOCK - There are provided a constant voltage circuit that features low current consumption and stable operation, and an analog electronic clock provided with the constant voltage circuit. The constant voltage circuit includes a differential amplifier circuit which is turned on/off by a predetermined signal and which controls the voltage of a gate of an output transistor on the basis of a reference voltage and a feedback voltage that are received, a switch circuit which is connected to an output terminal of the differential amplifier circuit and which is turned on/off by a predetermined signal, and a voltage holding circuit which is connected between the gate of the output transistor and a power supply terminal and which has a resistor and a capacitor connected in series. An analog electronic clock provided with the foregoing constant voltage circuit that supplies a voltage to at least an oscillation circuit and a frequency division circuit. | 07-24-2014 |
20140217950 | CONSTANT VOLTAGE CIRCUIT AND ANALOG ELECTRONIC CLOCK - There are provided a constant voltage circuit that outputs a stable constant voltage for an analog electronic clock, and an analog electronic clock featuring low current consumption and prolonged battery life. The constant voltage circuit has a first voltage holding circuit connected between the gate of an output transistor and an output terminal and a second voltage holding circuit connected between the gate of the output transistor and a ground terminal, and carries out control such that the second voltage holding circuit is enabled when the motor is operated. | 08-07-2014 |
20140219037 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE - Provided is a semiconductor non-volatile memory device capable of improving the accuracy of trimming by creating a written state before data is written into a non-volatile memory element. The semiconductor non-volatile memory device includes: a written data transmission circuit for transmitting written data to a non-volatile memory element; a first switch connected between the non-volatile memory element and a data output terminal; a third switch connected to an output terminal of the written data transmission circuit; and a control circuit for controlling the respective switches. When a test mode signal is input, the control circuit turns on only the first switch and the third switch so as to control the written data to be output to the data output terminal before data is written into the non-volatile memory element. | 08-07-2014 |
20140240054 | OSCILLATION STOP DETECTION CIRCUIT AND ELECTRONIC DEVICE - Provided is an oscillation stop detection circuit having low current consumption, which is capable of detecting stop of oscillation regardless of whether an input signal stops at High or Low and thereby accurately measuring an oscillation stop detection period. The oscillation stop detection circuit includes: a pulse generation circuit for outputting a one-shot pulse in synchronization with an oscillation signal input from an input terminal; a capacitor including one terminal connected to a first power supply terminal and another terminal connected to an output terminal; a constant current circuit connected between the first power supply terminal and the another terminal of the capacitor; and a switch circuit connected between an output terminal of the pulse generation circuit and the another terminal of the capacitor, for connecting the another terminal of the capacitor to a second power supply terminal based on the one-shot pulse. | 08-28-2014 |
Patent application number | Description | Published |
20100321845 | OVERHEAT PROTECTION CIRCUIT AND POWER SUPPLY INTEGRATED CIRCUIT - Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit. | 12-23-2010 |
20110169457 | BATTERY PACK - Provided is a battery pack capable of implementing temperature protection with ease. Regardless of whether or not a battery protection IC ( | 07-14-2011 |
20110273232 | DIFFERENTIAL AMPLIFIER CIRCUIT - Provided is a differential amplifier circuit in which an offset voltage is independent from input voltages. A first correction current generation circuit and a second correction current generation circuit are provided and configured to cause the same current as a current flowing through a folded cascode amplifying stage to flow into an output stage. Accordingly, transistors included in the folded cascode amplifying stage and transistors included in the output stage have the same bias condition. | 11-10-2011 |
20120182062 | TEMPERATURE SENSOR DEVICE - Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit. | 07-19-2012 |
20120187911 | OUTPUT CIRCUIT, TEMPERATURE SWITCH IC, AND BATTERY PACK - An output circuit has a smaller area and restrains outputs from becoming unstable even if a power supply voltage is lower than an operating voltage. A supply terminal of an inverter circuit is provided with switch circuit, and the switch circuit stops the operation of the inverter circuit when the power supply voltage is lower than the operating voltage of the circuit. Further, the output terminal of the inverter circuit is provided with a current source to fix the output to the power supply voltage when the operation of the inverter circuit is stopped. | 07-26-2012 |
20150035567 | OUTPUT DRIVER CIRCUIT - An output driver circuit provides an overcurrent protection function by a simple circuit configuration. The output driver circuit has a constant-current circuit, a constant-current mirror MOS transistor, and a selector circuit. The constant-current mirror MOS transistor and the output MOS transistor constitute a current mirror circuit. The gate of the output MOS transistor is controlled by a voltage based on a constant current generated by the constant-current mirror MOS transistor, thereby limiting the current flowing between the source and the drain of the output MOS transistor. | 02-05-2015 |
Patent application number | Description | Published |
20100007903 | PRINT ATTRIBUTE SETTING APPARATUS, PRINT ATTRIBUTE SETTING METHOD, AND PRINT ATTRIBUTE SETTING PROGRAM - Print attributes are set in print type where a plurality of original paper images are arranged on at least one surface of print paper so that useless print can be prevented. A print attribute for defining a specific relationship between an original paper size and a print paper size is provided as one of the print attributes of the print type, one print attribute is selected from a plurality of options so that the specific relationship between the original paper size and the print paper size is set. As a result, a combination of the original paper size and the print paper size intended by a user can be set securely even in the above print type, so that useless print can be prevented securely. | 01-14-2010 |
20100177347 | IMAGE FORMING PROCESSING CONTROLLER AND METHOD AND COMPUTER-READABLE MEDIUM THEREOF - To provide a technique for enabling formation of a background pattern image even if a dedicated computer program corresponding to an image forming apparatus caused to execute image formation processing is not installed in an apparatus configured to instruct the image formation processing. An image-formation-processing control apparatus includes: a unit-pattern acquiring unit configured to acquire, via a network, unit patterns used for formation of a background pattern image in image forming apparatuses that are instruction targets of image formation processing; and a PDL-data generating unit configured to generate PDL data in which information used for specifying a shape of a background pattern image that should be formed and the unit patterns used for formation of a background pattern image in an image forming apparatus caused to execute the image formation processing are associated. | 07-15-2010 |
20110063664 | PRINT SETTING SUPPORT APPARATUS AND PRINT SETTING SUPPORT METHOD - A print setting support apparatus includes a content information acquisition section to acquire print content information relating to a content of a printing scheduled to be executed, a determination section to determine, based on the print content information acquired by the content information acquisition section, whether specified favorite setting is to be applied, a setting value acquisition section to acquire information relating to the specified favorite setting when it is determined that the specified favorite setting is to be applied, and a setting application section to automatically apply, as a print setting, a setting content of the specified favorite setting based on the information acquired by the setting value acquisition section. | 03-17-2011 |
20110216330 | IMAGE FORMING APPARATUS, PRINTING SYSTEM, PRINT SETTING APPARATUS, AND IMAGE FORMING METHOD - Provided is an image forming apparatus including: an acquisition unit that acquires size information regarding a sheet on which an image is to be formed and print data; an image forming unit that forms the image on the sheet on the basis of the print data acquired by the acquisition unit; and a control unit that, if the size information acquired by the acquisition unit indicates a first size of which an aspect ratio of the sheet is 1:substantially 1.41, exchanges vertical and horizontal directions of the image formed on the sheet with respect to the print data by controlling the image forming unit so as to execute a first split print mode of enlarging the image to be printed on two sheets. | 09-08-2011 |
Patent application number | Description | Published |
20110170655 | TABLET FEEDER - A tablet T is divided without moving a cutter and divided tablets T | 07-14-2011 |
20120175014 | MEDICAMENT DISPENSING MACHINE - The medicament dispensing machine enables to use vials having various sizes and shapes without changing a part in the machine or without performing a special operation. The medicament dispensing machine contains a discharging unit that receives a vial filled with a medicament from a medicament filling means and discharges out of a vial discharging window. The discharging unit contains a vial gripping means having a pair of gripping arms that grip a vial, a body of gripping means having the vial gripping means, a moving means that moves the vial gripping means from the medicament filling means to the vial discharging window, and an orientation changing mechanism that changes the orientation of the body of gripping means. With a coordination of the movement of the body of gripping means toward the vial discharging window, the orientation changing mechanism makes the gripping arms orient to the vial discharging window. | 07-12-2012 |
20130133782 | MEDICAMENT DISPENSING MACHINE - The medicament dispensing machine enables to use vials having various sizes and shapes without changing a part in the machine or without performing a special operation. The medicament dispensing machine contains a discharging unit that receives a vial filled with a medicament from a medicament filling means and discharges out of a vial discharging window. The discharging unit contains a vial gripping means having a pair of gripping arms that grip a vial, a body of gripping means having the vial gripping means, a moving means that moves the vial gripping means from the medicament filling means to the vial discharging window, and an orientation changing mechanism that changes the orientation of the body of gripping means. With a coordination of the movement of the body of gripping means toward the vial discharging window, the orientation changing mechanism makes the gripping arms orient to the vial discharging window. | 05-30-2013 |
20130256097 | MEDICINE FEEDING DEVICE, AND MEDICINE COUNTING DEVICE - A medicine counting device including a rotary container broadening radially in an upward direction and configured to rotate around an axis of the rotary container; a guide member fixed with a predetermined gap on a top surface side of the rotary container, spirally extending from the central portion towards an outer circumference of the rotary container, and configured to guide a medicine moved by a rotation of the rotary container from the central portion towards the outer circumference of the rotary container. The medicine counting device further includes a detector provided outside of the rotary container and a regulator configured to feed a medicine having been moved to the outer circumference and being in contact with the guide member towards the detector but returns the medicines which are not being in contact with the guide member to the central portion side of the rotary container by overpassing the guide member. | 10-03-2013 |
20130284755 | MEDICINE FEEDING DEVICE AND A MEDICINE COUNTING DEVICE USING THE MEDICINE FEEDING DEVICE - A medicine feeding device is configured by providing a first rotor | 10-31-2013 |
20130292401 | MEDICINE FEEDING DEVICE AND A MEDICINE COUNTING DEVICE USING THE MEDICINE FEEDING DEVICE - A medicine feeding device is configured by providing a first rotor that rotates around a first shaft, a second rotor that rotates around a second shaft, a partition wall extending from the second rotor towards the first rotor, a medicine discharge port provided on the outside of the second rotor, a medicine guide section located in the downstream of a movement section in the medicine transport direction, and a height regulator disposed between the movement section and medicine guide section. In addition, the width regulator that is disposed between the medicine guide section and the height regulator is further provided. Also, a medicine counting device is further provided with a medicine detection means for detecting the medicine that is supplied from the medicine discharge port, and a counting means (central control unit) for counting the medicines based on the detection performed by the medicine detection means. | 11-07-2013 |
20130334242 | MEDICINE FEEDING DEVICE AND A MEDICINE COUNTING DEVICE USING THE MEDICINE FEEDING DEVICE - A medicine feeding device is configured by providing a first rotor that rotates around a first shaft, a second rotor that rotates around a second shaft, a partition wall extending from the second rotor towards the first rotor, a medicine discharge port provided on the outside of the second rotor, a medicine guide section located in the downstream of a movement section in the medicine transport direction, and a height regulator disposed between the movement section and medicine guide section. In addition, the width regulator that is disposed between the medicine guide section and the height regulator is further provided. Also, a medicine counting device is further provided with a medicine detection means for detecting the medicine that is supplied from the medicine discharge port, and a counting means (central control unit) for counting the medicines based on the detection performed by the medicine detection means. | 12-19-2013 |
20130334243 | MEDICINE FEEDING DEVICE AND A MEDICINE COUNTING DEVICE USING THE MEDICINE FEEDING DEVICE - A medicine feeding device is configured by providing a first rotor that rotates around a first shaft, a second rotor that rotates around a second shaft, a partition wall extending from the second rotor towards the first rotor, a medicine discharge port provided on the outside of the second rotor, a medicine guide section located in the downstream of a movement section in the medicine transport direction, and a height regulator disposed between the movement section and medicine guide section. In addition, the width regulator that is disposed between the medicine guide section and the height regulator is further provided. Also, a medicine counting device is further provided with a medicine detection means for detecting the medicine that is supplied from the medicine discharge port, and a counting means (central control unit) for counting the medicines based on the detection performed by the medicine detection means. | 12-19-2013 |
20130334244 | MEDICINE FEEDING DEVICE AND A MEDICINE COUNTING DEVICE USING THE MEDICINE FEEDING DEVICE - A medicine feeding device is configured by providing a first rotor that rotates around a first shaft, a second rotor that rotates around a second shaft, a partition wall extending from the second rotor towards the first rotor, a medicine discharge port provided on the outside of the second rotor, a medicine guide section located in the downstream of a movement section in the medicine transport direction, and a height regulator disposed between the movement section and medicine guide section. In addition, the width regulator that is disposed between the medicine guide section and the height regulator is further provided. Also, a medicine counting device is further provided with a medicine detection means for detecting the medicine that is supplied from the medicine discharge port, and a counting means (central control unit) for counting the medicines based on the detection performed by the medicine detection means. | 12-19-2013 |
20130334245 | MEDICINE FEEDING DEVICE AND A MEDICINE COUNTING DEVICE USING THE MEDICINE FEEDING DEVICE - A medicine feeding device is configured by providing a first rotor that rotates around a first shaft, a second rotor that rotates around a second shaft, a partition wall extending from the second rotor towards the first rotor, a medicine discharge port provided on the outside of the second rotor, a medicine guide section located in the downstream of a movement section in the medicine transport direction, and a height regulator disposed between the movement section and medicine guide section. In addition, the width regulator that is disposed between the medicine guide section and the height regulator is further provided. Also, a medicine counting device is further provided with a medicine detection means for detecting the medicine that is supplied from the medicine discharge port, and a counting means (central control unit) for counting the medicines based on the detection performed by the medicine detection means. | 12-19-2013 |
20140246451 | MEDICINE CASSETTE AND MEDICINE FEEDING APPARATUS - A medicine feeding apparatus includes a cylindrical body | 09-04-2014 |
20150027286 | TABLET FEEDER - A tablet division feeder includes a moving unit to move a tablet T, a fixing blade located in a movement path of the tablet T, and a support plate extending from the fixing blade such that divided tablets T2 on the fixing blade are transferred and kept onto the support plate. The fixing blade divides the tablet T into upper and lower divided tablets as the tablet T is moved in such a manner that the lower divided tablet T1 is discharged and the upper divided tablet T2 is transferred from the fixing blade to the support plate by the moving unit and kept on the support plate. The upper divided tablet T2 is discharged from the support plate as the upper divided tablet T2 is further moved by the moving unit in such a manner that the upper divided tablet T2 is discharged from the moving unit. | 01-29-2015 |
20150028047 | TABLET FEEDER - A tablet division feeder includes a moving unit to move a tablet T, a fixing blade located in a movement path of the tablet T, and a support plate extending from the fixing blade such that divided tablets T2 on the fixing blade are transferred and kept onto the support plate. The fixing blade divides the tablet T into upper and lower divided tablets as the tablet T is moved in such a manner that the lower divided tablet T1 is discharged and the upper divided tablet T2 is transferred from the fixing blade to the support plate by the moving unit and kept on the support plate. The upper divided tablet T2 is discharged from the support plate as the upper divided tablet T2 is further moved by the moving unit in such a manner that the upper divided tablet T2 is discharged from the moving unit. | 01-29-2015 |
20150028078 | TABLET FEEDER - A tablet division feeder includes a moving unit to move a tablet T, a fixing blade located in a movement path of the tablet T, and a support plate extending from the fixing blade such that divided tablets T | 01-29-2015 |
Patent application number | Description | Published |
20110187899 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, PROGRAM, AND ELECTRONIC DEVICE - An image processing device for detecting a skin region representing a skin of a subject from a pickup image obtained by imaging said subject, the image processing device includes: a first irradiating section; a second irradiating section; an image pickup section; an adjusting section; and a skin detecting section. | 08-04-2011 |
20110196240 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, IMAGE PROCESSING PROGRAM AND ELECTRONIC APPARATUS - Disclosed herein is an image processing apparatus for extracting a characteristic point from an image, the image processing apparatus including: a first light radiation section; a second light radiation section; an image taking section; a skin-area detection section; and a characteristic-point extraction section. | 08-11-2011 |
20110298909 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, PROGRAM AND ELECTRONIC APPARATUS - An image processing apparatus detecting a skin area indicating human skin from an image, includes: an irradiating section irradiating an object with first and second wavelength light; a first generating section installed with an image sensor at least having a first light receiving element receiving the first wavelength light and a second light receiving element receiving the second wavelength light and generating a first mosaic image based on a reflected light from the object when the object is irradiated with the first and second wavelength lights incident to the image sensor; a second generating section generating a first image obtained by a first interpolation process and a second image obtained by a second interpolation process, in respective pixels forming the first mosaic image; and a detecting section detecting the skin area on the basis of the first and second images. | 12-08-2011 |
20120018637 | SWITCHING APPARATUS, SWITCHING METHOD, AND ELECTRONIC DEVICE - The present invention relates to a switching apparatus, a switching method, and an electronic device with which it is possible to detect whether or not a proximal object is a human skin. | 01-26-2012 |
20130099097 | IMAGING APPARATUS AND IMAGING METHOD - Provided is an imaging apparatus including an imaging element section, an imaging optical system, a transmission/block section, an actuator, and an output section. The imaging element section includes a plurality of pixels, and the imaging optical system forms an image on the imaging element section, the image being formed by an electromagnetic wave from the outside. The transmission/block section transmits and blocks the electromagnetic wave to/against the imaging element section, the transmission/block section being disposed at an aperture stop position in the imaging optical system. The actuator drives the transmission/block section to move back and forth to be changed in state between transmission and blocking. The output section produces an image signal output being differential signaling between a pixel output from the imaging element section when the transmission/block section is in the transmission state, and a pixel output from the imaging element section when it is in the blocking state. | 04-25-2013 |
20130242075 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, PROGRAM, AND ELECTRONIC DEVICE - An image processing device for detecting a skin region representing a skin of a subject from a pickup image obtained by imaging said subject, the image processing device includes: a first irradiating section; a second irradiating section; an image pickup section; an adjusting section; and a skin detecting section. | 09-19-2013 |
20140368088 | PIEZOELECTRIC DEVICE AND ELECTRONIC APPARATUS - A piezoelectric device includes a vibrator, a piezoelectric drive unit, and a first piezoelectric detector. The vibrator includes a first surface, a first groove formed along a first axis direction, and a second groove formed to be parallel to the first groove. The piezoelectric drive unit includes a first electrode pair provided in the first groove and opposed to each other in a second axis direction orthogonal to the first axis direction and parallel to the first surface, and a first piezoelectric body provided between the first electrode pair, and is capable of vibrating the vibrator. The first piezoelectric detector includes a second electrode pair provided in the second groove and opposed to each other in the second axis direction, and a second piezoelectric body provided between the second electrode pair, and is capable of detecting a vibration of the vibrator. | 12-18-2014 |
Patent application number | Description | Published |
20100251110 | DOCUMENT PROCESSING APPARATUS, CONTROL METHOD THEREFOR, AND COMPUTER-READABLE STORAGE MEDIUM STORING PROGRAM FOR THE CONTROL METHOD - When editing a document having a page that contains image data and text data arranged to coexist, a document processing apparatus determines whether text data exists in each text region in the page. Then, when a user inputs a predetermined operation, among a plurality of text regions in the page, the document processing apparatus performs, on a screen thereof, enlargement display of ranges respectively containing text regions each of which is determined so that text data exists therein. Consequently, when editing a document having a page that contains image data and text data arranged to coexist, users can easily confirm input contents of text. | 09-30-2010 |
20110173531 | DIGITAL DOCUMENT EDITING METHOD, DIGITAL DOCUMENT EDITING PROGRAM AND DIGITAL DOCUMENT EDITING APPARATUS - The invention relates to an editing of a digital document containing an image, a text, a pattern and the like on pages constituting the digital document. In response to an operation for deleting an image positioned in a page, such image is not added to another page but is moved to and displayed in an evacuation area provided independently from the page area. In the evacuation area, such image is displayed together with a serial number of the page in which such image was present originally. Thus the page layout is not destructed in pages other than the page of image deletion, and the user can easily confirm later the image existed in such page. | 07-14-2011 |
20110262046 | IMAGE PROCESSING APPARATUS AND CONTROL METHOD THEREOF - A sort-out cycle such as a judgment of three levels of “usable”, “unusable”, and “reserve” is made to images and, when the judgment of all images is completed, the judgment of the three levels is made again to the “reserve” images is repeated. The number of sort-out cycle times in which the judgment is made is applied as an evaluation to the images which are finally determined as “usable”. | 10-27-2011 |
20120001940 | DIGITAL DOCUMENT EDITING METHOD, DIGITAL DOCUMENT EDITING PROGRAM AND DIGITAL DOCUMENT EDITING APPARATUS - The invention relates to an editing of a digital document containing an image, a text, a pattern and the like on pages constituting the digital document. In response to an operation for deleting an image positioned in a page, such image is not added to another page but is moved to and displayed in an evacuation area provided independently from the page area. In the evacuation area, such image is displayed together with a serial number of the page in which such image was present originally. Thus the page layout is not destructed in pages other than the page of image deletion, and the user can easily confirm later the image existed in such page. | 01-05-2012 |
20120254742 | Digital Document Editing Method, Digital Document Editing Program and Digital Document Editing Apparatus - The invention relates to an editing of a digital document containing an image, a text, a pattern and the like on pages constituting the digital document. In response to an operation for deleting an image positioned in a page, such image is not added to another page but is moved to and displayed in an evacuation area provided independently from the page area. In the evacuation area, such image is displayed together with a serial number of the page in which such image was present originally. Thus the page layout is not destructed in pages other than the page of image deletion, and the user can easily confirm later the image existed in such page. | 10-04-2012 |
20140321721 | INFORMATION PROCESSING APPARATUS, CONTROL METHOD THEREOF AND PROGRAM - The present invention aims to encourage the input of comment on content requiring the viewing user's input and prevent the comment from failing to be input in a case where the content is displayed and the viewing user inputs the comment on the content. | 10-30-2014 |
20140333792 | IMAGE CAPTURING APPARATUS AND CONTROL METHOD THEREOF - An image capturing apparatus, comprises an image capturing unit configured to capture an image; a detection unit configured to detect an object in a captured image; a first authentication unit configured to perform authentication on a photographer using first dictionary data in which feature information of the photographer is registered; a second authentication unit configured to perform authentication on the object in the captured image using second dictionary data in which feature information of the object is registered for each photographer; and a switching unit configured to switch the second dictionary data to be used by the second authentication unit in accordance with the photographer authenticated by the first authentication unit. | 11-13-2014 |
Patent application number | Description | Published |
20090140349 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME - A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines. | 06-04-2009 |
20110076820 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME - A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines. | 03-31-2011 |
20110159653 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME - A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines. | 06-30-2011 |
Patent application number | Description | Published |
20110012132 | Semiconductor Device - Provided is a semiconductor device which has improved withstand voltage and can be manufactured by simpler manufacturing process. The semiconductor device according to the present invention includes: a SiC-containing n-type epitaxial layer | 01-20-2011 |
20120012861 | SEMICONDUCTOR DEVICE - A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches. | 01-19-2012 |
20120146055 | SiC SEMICONDUCTOR DEVICE - A SiC semiconductor device includes a SiC semiconductor layer having a first-conductivity-type impurity, a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer, an electrode connected to the SiC semiconductor layer through the opening of the field insulation film, and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with a terminal end portion of the electrode connected to the SiC semiconductor layer. A second-conductivity-type impurity concentration in a surface layer portion of the guard ring making contact with the electrode is smaller than a first-conductivity-type impurity concentration in the SiC semiconductor layer. | 06-14-2012 |
20130248981 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME - A semiconductor device includes a first conductive-type semiconductor layer, a second conductive-type body region formed in a surficial portion of the semiconductor layer, a first conductive-type source region formed in a surficial portion of the body region, a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first portion in contact with the semiconductor layer outside the body region, a second portion in contact with the body region, and a third portion in contact with the source region, and a gate electrode provided on the gate insulating film in an area extending across the semiconductor layer outside the body region, the body region, and the source region. The third portion of the gate insulating film has a thickness greater than the thickness of the first portion and the thickness of the second portion. | 09-26-2013 |
20140054611 | SEMICONDUCTOR DEVICE - A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type; source regions of the first conductivity type, formed on a surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed, the inside surface of the trenches are covered by a gate insulating film, and the gate electrodes comprise surface-facing parts, which are buried in the trenches. | 02-27-2014 |
20140138708 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film. | 05-22-2014 |
Patent application number | Description | Published |
20080305647 | Method for Manufacturing a Semiconductor Device - It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower. | 12-11-2008 |
20100052035 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film. | 03-04-2010 |
20100244157 | SEMICONDUCTOR DEVICE - A semiconductor device includes a MISFET comprising: a semiconductor layer including a semiconductor region formed therein; a gate insulating film formed above the semiconductor region, and including a metal oxide layer containing a metal and oxygen, the metal contained in the metal oxide layer being at least one selected from Hf and Zr, the metal oxide layer further including at least one element selected from the group consisting of Ru, Cr, Os, V, Tc, and Nb, the metal oxide layer having sites that capture or release charges formed by inclusion of the element, density of the element in the metal oxide layer being in the range of 1×10 | 09-30-2010 |
20110003481 | Method for manufacturing a semiconductor device - It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower. | 01-06-2011 |
20120018792 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a nonvolatile semiconductor memory device according to an embodiment, includes: forming a first insulating film on a semiconductor substrate; forming a charge trapping film on the first insulating film, the forming of the charge trapping film including; forming a first nitride layer on the first insulating film at a heat treatment temperature of 550° C. or higher, forming a first oxynitride layer on the first nitride layer by oxidizing a surface of the first nitride layer, and forming a second nitride layer on the first oxynitride layer; forming a second insulating film on the charge trapping film; and forming a control gate on the second insulating film. | 01-26-2012 |
20120261742 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being a single-layer film containing silicon oxide or silicon oxynitride; a charge trapping film formed on the first insulating film; a second insulating film formed on the charge trapping film; and a control gate electrode formed on the second insulating film. A metal oxide exists in an interface between the first insulating film and the charge trapping film, the metal oxide comprises material which is selected from the group of Al | 10-18-2012 |
20140167133 | NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory according to an embodiment includes: a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control gate electrode; and a sidewall formed on a side surface of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewall containing a material for preventing hydrogen from diffusing. | 06-19-2014 |
Patent application number | Description | Published |
20100041193 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device includes a floating gate electrode which is selectively formed on a main surface of a first conductivity type with a first gate insulating film interposed therebetween, a control gate electrode formed on the floating gate electrode with a second gate insulating film interposed therebetween, and source/drain regions of a second conductivity type which are formed in the main surface of the substrate in correspondence with the respective gate electrodes. The first gate electrode has a three-layer structure in which a silicon nitride film is held between silicon oxide films, and the silicon nitride film includes triple coordinate nitrogen bonds. | 02-18-2010 |
20100052039 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device of an embodiment can prevent nitriding of the lower-layer insulating film and oxygen diffusion from the upper-layer insulating film, so as to minimize the decrease in charge capture density. This semiconductor device includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a nitrogen-added amorphous silicon layer formed on the first insulating film, a first silicon nitride layer formed on the amorphous silicon layer, and a second insulating film formed above the first silicon nitride layer. | 03-04-2010 |
20100250223 | SEMICONDUCTOR CIRCUIT DETERIORATION SIMULATION METHOD AND COMPUTER PROGRAM MEDIUM - A semiconductor circuit deterioration simulation method for a circuit including MOSFETs includes inserting a dynamic voltage source associated with a fluctuation in voltage/current characteristics into each gate terminal of a plurality of MOSFETs in series, calculating dynamic deterioration amounts of the plurality of MOSFETs by performing circuit simulation and calculating a dynamic deterioration amount, and repeating the above processing to perform the circuit deterioration simulation over the long term. | 09-30-2010 |
20110240949 | INFORMATION RECORDING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, an information recording device includes first and second electrodes, a variable resistance layer between the first and second electrodes, and a control circuit which controls the variable resistance layer to n (n is a natural number except 1) kinds of resistance. The variable resistance layer comprises a material filled between the first and second electrodes, and particles arranged in a first direction from the first electrode to the second electrode in the material, and each of the particles has a resistance lower than that of the material. A resistance of the variable resistance layer is decided by a short between the first electrode and at least one of the particles. | 10-06-2011 |
20120319074 | RESISTANCE CHANGE DEVICE AND MEMORY CELL ARRAY - According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode. | 12-20-2012 |
20130223173 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - According to one embodiment, a semiconductor memory device includes a memory cell array including blocks, each block being capable of executing a write, read, or erase operation independently of other blocks. A control portion is configured to execute the operation of a first block among the blocks in a first cycle, set a selection inhibited region within a range of a predetermined distance from the first block, until a temperature relaxation time for relaxing a temperature of the first block has elapsed, set a region except the selection inhibited region among the blocks as a second block, and execute the operation of the second block in a second cycle. | 08-29-2013 |
20140293692 | Memory System, Control System and Method of Predicting Lifetime - A memory system according to an embodiment may have an integration unit and a prediction unit. The integration unit may detect substrate current flowing through a substrate of a non-volatile memory when the non-volatile memory with a memory cell, which has binary or multivalued being the binary or more is written/erased. The integration unit may records an integration value of the detected substrate current into a storage. The prediction unit may predict a lifetime of the non-volatile memory based on the integration value which is recorded on the storage. | 10-02-2014 |
20140372671 | AUTHENTICATION DEVICE, AUTHENTICATION METHOD, AND COMPUTER PROGRAM PRODUCT - According to an embodiment, an authentication device includes an acquiring unit, a predicting unit, and an authenticating unit. The acquiring unit is configured to acquire performance information of a first device that is a device to be authenticated. The predicting unit is configured to predict performance information of a second device that is a device being a reference for authentication according to a change with time from initial performance information. The authenticating unit is configured to perform an authentication process of determining whether or not the first device falls into the second device on a basis of a degree of agreement between the performance information acquired by the acquiring unit and the performance information predicted by the predicting unit. | 12-18-2014 |
Patent application number | Description | Published |
20090184401 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto. | 07-23-2009 |
20090267134 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film. | 10-29-2009 |
20110089478 | Semiconductor device and method for manufacturing the same - It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto. | 04-21-2011 |
20120012917 | Semiconductor device and method for manufacturing the same - It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto. | 01-19-2012 |
20120292685 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto. | 11-22-2012 |
20140138598 | NONVOLATILE MEMORY DEVICE - According to one embodiment, nonvolatile memory device includes a semiconductor layer, a conductive layer and a resistance change layer. The semiconductor layer has an impurity concentration less than 1×10 | 05-22-2014 |