Patent application number | Description | Published |
20090017567 | Method for manufacturing semiconductor device - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated. | 01-15-2009 |
20090017599 | Method for manufacturing semiconductor device - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated. | 01-15-2009 |
20090023251 | Method for manufacturing semiconductor device - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated. | 01-22-2009 |
20120045861 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated. | 02-23-2012 |
20120168066 | PEELING APPARATUS AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE - To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid. | 07-05-2012 |
20150017751 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated. | 01-15-2015 |
20150140713 | PEELING APPARATUS AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE - To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid. | 05-21-2015 |
Patent application number | Description | Published |
20110169016 | MOSFET AND METHOD FOR MANUFACTURING MOSFET - A MOSFET includes: a silicon carbide (SiC) substrate having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer formed on the main surface of the SiC substrate; and an insulating film formed in contact with a surface of the semiconductor layer. The MOSFET has a sub-threshold slope of not more than 0.4 V/Decade. | 07-14-2011 |
20110175110 | MOSFET AND METHOD FOR MANUFACTURING MOSFET - A MOSFET includes a silicon carbide (SiC) substrate having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer formed on the main surface of the SiC substrate; and an insulating film formed in contact with a surface of the semiconductor layer. When the insulating film has a thickness of not less than 30 nm and not more than 46 nm, the threshold voltage thereof is not more than 2.3V. When the insulating film has a thickness of more than 46 nm and not more than 100 nm, the threshold voltage thereof is more than 2.3 V and not more than 4.9 V. | 07-21-2011 |
20110180812 | SEMICONDUCTOR DEVICE - A MOSFET which is a semiconductor device capable of achieving a stable reverse breakdown voltage and reduced on-resistance includes a SiC wafer of an n conductivity type, a plurality of p bodies of a p conductivity type formed to include a first main surface of the SiC wafer, and n | 07-28-2011 |
20110297963 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 | 12-08-2011 |
20120007104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device employing silicon carbide, and the like are provided. In the semiconductor device, even when an electrode material and an upper electrode material are different, a problem does not take place at an interface at which these different types of metals are in contact with each other, thus obtaining high reliability in long-term use. | 01-12-2012 |
20120056201 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n | 03-08-2012 |
20120056202 | SEMICONDUCTOR DEVICE - A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×10 | 03-08-2012 |
20120097980 | SILICON CARBIDE INSULATING GATE TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A termination configuration of a silicon carbide insulating gate type semiconductor device includes a semiconductor layer of a first conductivity type having a first main face, a gate electrode, and a source interconnection, as well as a circumferential resurf region. The semiconductor layer includes a body region of a second conductivity type, a source region of the first conductivity type, a contact region of the second conductivity type, and a circumferential resurf region of the second conductivity type. A width of a portion of the circumferential resurf region excluding the body region is greater than or equal to ½ the thickness of at least the semiconductor layer. A silicon carbide insulating gate type semiconductor device of high breakdown voltage and high performance can be provided. | 04-26-2012 |
20120171850 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes the steps of forming a semiconductor layer made of SiC on an SiC substrate, forming a film on the semiconductor layer, and forming a groove in the film. The semiconductor device including a chip having an interlayer insulating film includes a groove formed in the interlayer insulating film to cross the chip. | 07-05-2012 |
20120199850 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the surface of the semiconductor layer. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the semiconductor layer and the insulating film is not less than 1×10 | 08-09-2012 |
20120228640 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes: a substrate having a main surface; and a silicon carbide layer formed on the main surface of the substrate and including a side surface inclined relative to the main surface. The side surface substantially includes a {03-3-8} plane. The side surface includes a channel region. | 09-13-2012 |
20120248462 | IGBT - An IGBT includes a groove provided in a silicon carbide semiconductor layer, a body region of a first conductivity type provided in the silicon carbide semiconductor layer, and an insulating film covering at least a sidewall surface of the groove, the sidewall surface of the groove being a surface having an off angle of 50° or more and 65° or less with respect to a {0001} plane, the sidewall surface of the groove including a surface of the body region, the insulating film being in contact with at least the surface of the body region at the sidewall surface of the groove, and a first conductivity type impurity concentration in the body region being 5×10 | 10-04-2012 |
20120305943 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A drift layer has a thickness direction throughout which a current flows and has an impurity concentration N | 12-06-2012 |
20120313112 | SEMICONDUCTOR DEVICE - A MOSFET includes a silicon carbide substrate, a drift layer made of silicon carbide and including a main surface having an off angle of 50° or more and 65° or less with respect to a {0001} plane, and a gate oxide film formed on and in contact with the main surface of the drift layer. The drift layer includes a p type body region formed to include a region in contact with the gate oxide film. The p type body region has an impurity density of 5×10 | 12-13-2012 |
20120319134 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A gate electrode includes a polysilicon film in contact with a gate insulating film, a barrier film provided on the polysilicon film, a metal film provided on the barrier film and made of refractory metal. An interlayer insulating film is arranged so as to cover the gate insulating film and the gate electrode provided on the gate insulating film. The interlayer insulating film has a substrate contact hole partially exposing a silicon carbide substrate in a region in contact with the gate insulating film. A interconnection is electrically connected to the silicon carbide substrate through the substrate contact hole and is electrically insulated from the gate electrode by the interlayer insulating film. | 12-20-2012 |
20130224941 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 | 08-29-2013 |
Patent application number | Description | Published |
20150013286 | HONEYCOMB FILTER AND PRODUCTION METHOD FOR HONEYCOMB FILTER - A honeycomb filter includes a ceramic honeycomb substrate and an auxiliary filter layer. The ceramic honeycomb substrate includes a porous honeycomb fired body having cell walls provided along a longitudinal direction of the porous honeycomb fired body to define cells through which fluid is to pass and which have a fluid inlet end and a fluid outlet end opposite to the fluid inlet end along the longitudinal direction. The cells include first cells including an inlet opening end at the fluid inlet end and an outlet closed end at the fluid outlet end. The auxiliary filter layer is provided on a surface of first cell walls of the first cells and on a pore portion in the first cell walls, and includes a first layer and a second layer. In the first layer, particles having a first average particle diameter are deposited on the surface of the first cell walls. | 01-15-2015 |
20150017075 | HONEYCOMB FILTER AND PRODUCTION METHOD FOR HONEYCOMB FILTER - A honeycomb filter includes a ceramic honeycomb substrate, an auxiliary filter layer, an SCR catalyst, and a portion. The ceramic honeycomb substrate has cell walls provided along a longitudinal direction of the ceramic honeycomb substrate to define cells through which fluid is to pass and which have a fluid inlet end and a fluid outlet end opposite to the fluid inlet end along the longitudinal direction. The cells include first cells and second cells. The auxiliary filter layer is provided on first surfaces of first cell walls of the first cells. The SCR catalyst is supported on second surfaces of second cell walls of the second cells. The second surfaces substantially correspond to the first surfaces. The portion satisfies a01-15-2015 | |
20150059305 | HONEYCOMB FILTER AND METHOD FOR PRODUCING HONEYCOMB FILTER - An object of the present invention is to provide a honeycomb filter capable of achieving a combination of high collection efficiency and low pressure loss. The honeycomb filter comprises a ceramic honeycomb substrate in which a multitude of cells through which a fluid flows are disposed in parallel in a longitudinal direction and are separated by cell walls, each cell being sealed at an end section at either the fluid inlet side or the fluid outlet side, and a filter layer which, among the surfaces of the cell walls, is formed on the surface of the cell walls of those cells in which the end section at the fluid inlet side is open and the end section at the fluid outlet side is sealed by a sealing material, wherein the thickness of the filter layer increases gradually from the fluid inlet side toward the fluid outlet side. | 03-05-2015 |
20150068176 | HONEYCOMB FILTER - The honeycomb filter of the present invention comprises a ceramic honeycomb substrate formed from a porous body of sintered ceramic particles, and a filter layer formed on the surface of the cell walls, wherein a portion of the filter layer penetrates from the surface of the cell walls into pores formed by the ceramic particles to form inter-particle filtration bodies, these inter-particle filtration bodies are formed from a plurality of spherical ceramic particles and crosslinking bodies which bind the spherical ceramic particles to each other, and the spherical ceramic particles and the crosslinking bodies form a three-dimensional network structure. | 03-12-2015 |
Patent application number | Description | Published |
20090275644 | Novel adaptor protein that binds to mammalian toll-like receptor 3 and gene thereof - A novel adaptor protein and its gene are provided. The novel adaptor protein has a property of binding to mammalian Toll-like receptor 3, which controls type I interferon production that is effective for prevention/treatment of viral infectious disease such as hepatitis B, hepatitis C, and the like, treatment of tumors, and the other purposes. Novel adaptor protein TICAM-1, which has an amino acid sequence set forth in SEQ ID NO: 2 or 4, specifically binds to the mammalian Toll-like receptor 3 and induces production of type I interferon. A mutant of the adaptor protein TICAM-1 has similar properties, provided that it has TIR domain (an amino acid sequence ranging from 394-position to 532-position in the amino acid sequence set forth in SEQ ID NO: 2 or an amino acid sequence ranging 396-position to 534-position in the amino acid sequence set forth in SEQ ID NO: 4). The gene is a gene encoding the adaptor protein TICAM-1. | 11-05-2009 |
20100087510 | Novel Adaptor protein that binds to mammalian toll-like receptor 3 and gene thereof - A novel adaptor protein and its gene are provided. The novel adaptor protein has a property of binding to mammalian Toll-like receptor 3, which controls type I interferon production that is effective for prevention/treatment of viral infectious disease such as hepatitis B, hepatitis C, and the like, treatment of tumors, and the other purposes. Novel adaptor protein TICAM-1, which has an amino acid sequence set forth in SEQ ID NO: 2 or 4, specifically binds to the mammalian Toll-like receptor 3 and induces production of type I interferon. A mutant of the adaptor protein TICAM-1 has similar properties, provided that it has TIR domain (an amino acid sequence ranging from 394-position to 532-position in the amino acid sequence set forth in SEQ ID NO: 2 or an amino acid sequence ranging 396-position to 534-position in the amino acid sequence set forth in SEQ ID NO: 4). The gene is a gene encoding the adaptor protein TICAM-1. | 04-08-2010 |
20130178611 | Novel Nucleic Acid Having Adjuvanticity and Use Thereof - The disclosed nucleic acid at least containing a single-stranded DNA to be delivered to endosomes of dendritic cells and a double-stranded RNA capable of activating TLR3 can be delivered to endosomal TLR3 and has a strong adjuvanticity with few side effects, and therefore is useful as an active ingredient of immunostimulants, vaccine adjuvants, cancer therapeutic agents and the like. | 07-11-2013 |
Patent application number | Description | Published |
20110044960 | MEDICAMENT, DENTAL MATERIAL, AND METHOD OF SCREENING - The present invention provides a novel and creative dental materials for treatment of pulpitis and/or enhancement of dentinogenesis. The dental materials of the present invention contain at least one of a protein having matrix metalloprotease 3 activities or matrix metalloprotease 3 precursor protein as an active ingredient. The dental materials of the present invention contain a carrier having biocompatibility. The dental materials of the present invention can contain at least one cell type among pulp cells, pulp stem cells, pulp progenitor cells, odontoblasts or cells that can differentiate into odontoblasts. | 02-24-2011 |
20120164604 | UNEXTRACTED TOOTH ROOT CANAL FILLER AND DENTAL TISSUE REGENERATION METHOD FOR UNEXTRACTED TOOTH - Disclosed is a root canal filler for non-extracted tooth which causes no internal resorption or external resorption in a tooth with complete root formation, shows no odontoclast, and contributes to the regeneration of a dental tissue in which odontoblasts are smoothly aligned on the dentin wall. After pulpectomy or enlargement/cleaning of an infected root canal, a root canal filler for non-extracted tooth, which comprises tooth pulp stem cells and an extracellular matrix, is inserted into the apical side of the root canal of the non-extracted tooth. The tooth pulp stem cells may be, for example, dental pulp CXCR4-positive cells. It is preferred to attach, to the crown side of the root canal, migration factor(s) including at least one factor selected from among a cell migration factor, a cell proliferation factor, a neurotrophic factor and an angiogenic factor. | 06-28-2012 |
20120270177 | DENTAL ULTRASONIC DRUG DELIVERY SYSTEM AND DENTAL ULTRASONIC DRUG DELIVERY METHOD - A dental ultrasonic drug delivery system capable of accurately cleaning the inside of root canals and killing bacteria in dentin tubules is provided. The dental ultrasonic drug delivery system delivers a drug to a target using an ultrasonic delivery device | 10-25-2012 |
20130330303 | BRAIN TISSUE REGENERATION METHOD - A material for treatment of cerebral infarction ameliorates angiopathy at a cerebral infarction region and improves brain function. The material for treatment of cerebral infarction according to the present invention comprises a dental pulp stem cell including at least one of a CD105-positive cell, an SP cell, a CD24-positive cell, a CD271-positive cell, and a CD150-positive cell. The material for treatment of cerebral infarction according to the present invention may contain a secretory protein of the dental pulp stem cell. Transplanted dental pulp stem cells do not directly differentiate into neural progenitor cells or neural cells and indirectly participate in the promotion of differentiation to restore and cure a cerebral infarction region such that the region becomes normal. | 12-12-2013 |
20140099605 | UNEXTRACTED TOOTH ROOT CANAL FILLER AND DENTAL TISSUE REGENERATION METHOD FOR UNEXTRACTED TOOTH - Disclosed is a root canal filler for non-extracted tooth which causes no internal resorption or external resorption in a tooth with complete root formation, shows no odontoclast, and contributes to the regeneration of a dental tissue in which odontoblasts are smoothly aligned on the dentin wall. After pulpectomy or enlargement/cleaning of an infected root canal, a root canal filler for non-extracted tooth, which comprises tooth pulp stem cells and an extracellular matrix, is inserted into the apical side of the root canal of the non-extracted tooth. The tooth pulp stem cells may be, for example, dental pulp CXCR4-positive cells. It is preferred to attach, to the crown side of the root canal, migration factor(s) including at least one factor selected from among a cell migration factor, a cell proliferation factor, a neurotrophic factor and an angiogenic factor. | 04-10-2014 |
20140322672 | ROOT CANAL FILLING MATERIAL CONTAINING MESENCHYMAL STEM CELLS AND METHOD FOR REGENERATING DENTAL TISSUE USING THE SAME - A root canal filling material for a tooth extraction or tooth non-extraction process can be used clinically because of its easy availability and can efficiently enhance dental tissue regeneration; a method for regenerating dental tissue using the filling material is also provided. A root canal filling material | 10-30-2014 |
Patent application number | Description | Published |
20120024963 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of this invention is to provide a semiconductor device (an RFID) with reduced loss of voltage/current corresponding to a threshold value of a transistor, and having a voltage/current rectification property. Another object of this invention is to simplify a fabrication process and a circuit configuration. A rectifier circuit is provided in an element included in a semiconductor device (RFID) capable of communicating data wirelessly. As compared to the case where only a diode is provided, coils are provided between gate terminals and drain terminals of transistors constituting the diode in a rectifier circuit, so that the coils overlap an antenna which receives a radio wave, whereby a voltage output by the rectifier circuit is increased using electromagnetic coupling between the antenna which receives a radio wave and the coils, so that the rectification efficiency is improved. | 02-02-2012 |
20120025611 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - A power feeding device which wirelessly supplies power to a power receiver receives a position and resonant frequency detection signal from the power receiver, detects the position and the resonant frequency of the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. As the power signal for power transmission, two signals having different frequencies, which are generated using a mixer by mixing a base carrier (a first signal) with a conversion carrier (a second signal) generated on the basis of the resonant frequency, are used. | 02-02-2012 |
20120025627 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. | 02-02-2012 |
20120025631 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end, without causing increases in complexity and size of devices. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver by receiving a position and resonant frequency detection signal using a plurality of sub-carriers having different frequencies from the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency. | 02-02-2012 |
20120062039 | POWER FEEDING DEVICE, WIRELESS POWER FEEDING SYSTEM USING THE SAME AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding device, a power feeding system, and a power feeding method which are more convenient for a power feeding user at the power receiving end. The power feeding device includes a means of controlling a frequency of a power signal transmitted to a power receiver, based on a proportion of signals, among power signals output to an antenna circuit, that return from the power receiver to the antenna circuit without feeding power to the power receiver. | 03-15-2012 |
20120161529 | POWER FEEDING DEVICE, POWER RECEIVING DEVICE, AND WIRELESS POWER FEED SYSTEM - A wireless power feed system with high transfer efficiency of electric power is disclosed. The wireless power feed system includes a power feeding device and a power receiving device, wherein the power feeding device includes a first electromagnetic coupling coil that is connected to an AC power source via a directional coupler; a first resonant coil; a switch connected to the opposite ends of the first resonant coil; a control circuit which conducts switching on/off of the switch based on a parameter of an amplitude of a reflective wave detected by the directional coupler; and an analog-digital converter provided between the first electromagnetic coupling coil and the control circuit; and the power receiving device includes a second resonant coil; and a second electromagnetic coupling coil, and wherein the first electromagnetic coupling coil is provided between the first resonant coil and the second resonant. | 06-28-2012 |
20120187771 | POWER FEEDING DEVICE AND WIRELESS POWER FEEDING SYSTEM - A resonant power feeding system that can provide high power transmission efficiency between a power feeding device and a power reception device without dynamically controlling the oscillation frequency in accordance with the distance between the power feeding device and the power reception device. High power transmission efficiency between the power feeding device and the power reception device is obtained by addition of a structure for adjusting the matching condition to both the power reception device and the power feeding device. Specifically, a transmission-reception circuit and a matching circuit are provided in both the power reception device and the power feeding device, and wireless signals for adjusting the matching circuit are transmitted and received through a resonant coil. Thus, the power feeding device can efficiently supply power to the power reception device without adjusting the oscillation frequency. | 07-26-2012 |
20140375263 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency. | 12-25-2014 |
20150214918 | POWER FEEDING DEVICE AND WIRELESS POWER FEEDING SYSTEM - A resonant power feeding system that can provide high power transmission efficiency between a power feeding device and a power reception device without dynamically controlling the oscillation frequency in accordance with the distance between the power feeding device and the power reception device. High power transmission efficiency between the power feeding device and the power reception device is obtained by addition of a structure for adjusting the matching condition to both the power reception device and the power feeding device. Specifically, a transmission-reception circuit and a matching circuit are provided in both the power reception device and the power feeding device, and wireless signals for adjusting the matching circuit are transmitted and received through a resonant coil. Thus, the power feeding device can efficiently supply power to the power reception device without adjusting the oscillation frequency. | 07-30-2015 |
Patent application number | Description | Published |
20120225818 | PLASMA PROTEIN EFFECTIVE FOR SUPPRESSING COUGH - The activated Factor XI is provided as an antitussive for cough caused by the stimulation at the tracheal bifurcation such as chronic cough. A pharmaceutical composition for prevention, treatment and/or symptom amelioration of cough, comprising a polypeptide chain as an active ingredient and a pharmaceutically acceptable carrier, wherein the polypeptide chain consists of a full length amino acid sequence constituting activated Factor XI (hereinafter also referred to as “FXIa”), the amino acid sequence with one or several amino acids therein being deleted, substituted or added, or a partial sequence of either of the above amino acid sequences, or an amino acid sequence comprising as a part any of the above amino acid sequences. | 09-06-2012 |
20130224179 | PLASMA PROTEIN EFFECTIVE FOR SUPPRESSING COUGH - The activated Factor XI is provided as an antitussive for cough caused by the stimulation at the tracheal bifurcation such as chronic cough. A pharmaceutical composition for prevention, treatment and/or symptom amelioration of cough, comprising a polypeptide chain as an active ingredient and a pharmaceutically acceptable carrier, wherein the polypeptide chain consists of a full length amino acid sequence constituting activated Factor XI (hereinafter also referred to as “FXIa”), the amino acid sequence with one or several amino acids therein being deleted, substituted or added, or a partial sequence of either of the above amino acid sequences, or an amino acid sequence comprising as a part any of the above amino acid sequences. | 08-29-2013 |