Minoru Honda
Minoru Honda, Nirasaki-Shi JP
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20110086485 | METHOD FOR MANUFACTURING A MOS SEMICONDUCTOR MEMORY DEVICE, AND PLASMA CVD DEVICE - To manufacture a MOS semiconductor memory device having an insulating film laminate in which adjacent insulating films have band-gaps of different sizes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under pressure conditions that differ from at least pressure conditions used when forming the adjacent insulating films, and the insulating films are sequentially formed by altering the band-gaps of the adjacent insulating films that constitute the insulating film laminate. | 04-14-2011 |
Minoru Honda, Hyogo JP
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20090104787 | PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS - A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots. | 04-23-2009 |
20090197403 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N | 08-06-2009 |
20090269940 | METHOD FOR NITRIDING SUBSTRATE AND METHOD FOR FORMING INSULATING FILM - In a substrate nitriding method for nitriding a target substrate by allowing a nitrogen-containing plasma to act on silicon on a surface of the substrate in a processing chamber of a plasma processing apparatus, the nitridation by the nitrogen-containing plasma is performed by controlling a sheath voltage V | 10-29-2009 |
20100283097 | MOS SEMICONDUCTOR MEMORY DEVICE - The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device 601 includes a first insulating film | 11-11-2010 |
20100323529 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N | 12-23-2010 |
20100323531 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N | 12-23-2010 |
20110086517 | PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING SILICON NITRIDE FILM LAMINATE, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Disclosed is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV. | 04-14-2011 |
20110189862 | SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a process of forming a silicon oxynitride film having concentration of hydrogen atoms below or equal to 9.9×10 | 08-04-2011 |
20110206590 | SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND PLASMA CVD APPARATUS - To form a dense high-quality silicon oxide film (SiO | 08-25-2011 |
Minoru Honda, Osaka-Shi JP
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20100219094 | CONTAINER - A drug container with no need to peel a gas-barrier film or with no need to contain a desiccant, an oxygen absorbent or the like, in which the contents therein can be seen by the naked eyes. The container ( | 09-02-2010 |
20130334079 | DOUBLE-CHAMBER CONTAINER AND METHOD FOR MANUFACTURING SAME - There is provided a method for manufacturing a double-chamber container including an agent storage chamber and a solution storage chamber separated from each other by a weak seal portion, the method including the steps of: preparing a first sheet-like member including a first agent storage chamber forming portion and a first solution storage chamber forming portion whose one sides are joined to each other, as well as a second sheet-like member including a second agent storage chamber forming portion and a second solution storage chamber forming portion whose one sides are joined to each other; and forming the agent storage chamber and the solution storage chamber by joining the first and the second sheet-like members. The weak seal portion is formed by joining the one side of the first medical solution storage chamber forming portion and the one side of the second medical solution storage chamber forming portion. | 12-19-2013 |
Minoru Honda, Kitanagoya-Shi JP
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20100096554 | DEVICE AND METHOD FOR EVALUATING CLEANLINESS - The device comprises a floodlight unit and a receiver unit and a processing unit. The floodlight unit applies an infrared light to the surface of a work piece, and comprises a surface light source and a focusing lens. The receiver unit receives the infrared light reflected from the surface of the work piece, and comprises a receiver sensor and a filter, which passes the infrared light that has the wavelength which contaminants on the surface absorb. The processing unit evaluates the cleanliness of the surface of the work piece according to the absorbance of the infrared light reflected from the surface. And a receiving area of the reflected infrared light from the surface is set smaller than an applying area of the applied infrared light to the surface. | 04-22-2010 |
20140216872 | SEALING DEVICE AND SUSPENSION DEVICE WITH THE SEALING DEVICE - A sealing device for sealing between a tube member and an axial member movably inserted into the tube member includes a dust seal held on an opening end part of the tube member and including an annular dust seal lip held in sliding contact with the outer peripheral surface of the axial member, and a scraper arranged at an inner side of the dust seal and including an annular lip portion slidably pressed into contact with the outer peripheral surface of the axial member. The hardness of the lip portion is set to be higher than that of the dust seal lip. | 08-07-2014 |
Minoru Honda, Amagasaki-Shi JP
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20100040980 | METHOD AND APPARATUS FOR REFORMING FILM AND CONTROLLING SLIMMING AMOUNT THEREOF - In a film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, the electron beams are irradiated in a state where the film layer is cooled. Further, in a slimming amount controlling method for controlling a slimming amount of a resist film layer, the slimming amount thereof is controlled by the irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled. Furthermore, in a film reforming apparatus including a mounting unit for mounting thereon an object to be processed and an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on an object, the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit. | 02-18-2010 |
20110254078 | METHOD FOR DEPOSITING SILICON NITRIDE FILM, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a method for depositing a silicon nitride film in a plasma CVD device which introduces microwaves into a process chamber by a planar antenna having a plurality of apertures, and the method including setting the pressure in the process chamber within a range from 10 Pa to 133.3 Pa and performing plasma CVD by using film formation gas including a silicon containing compound gas and a nitrogen gas while applying an RF bias to the wafer by supplying high-frequency power with an output density within a range from 0.009 W/cm | 10-20-2011 |
20120126376 | SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×10 | 05-24-2012 |
20120153442 | SILICON NITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a process of forming a silicon nitride film having concentration of hydrogen atoms below or equal to 9.9×10 | 06-21-2012 |
Minoru Honda, Kariya-Shi JP
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20100024642 | FILTER FOR REMOVING A SULFUR-CONTAINING-GAS AND METHOD FOR REMOVING A SULFUR-CONTAINING-GAS USING THE SAME - Provided is a filter for removing a sulfur-containing-gas ( | 02-04-2010 |
Minoru Honda, Osaka JP
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20090241310 | RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING - Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si | 10-01-2009 |
Minoru Honda, Nirasaki City JP
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20120208376 | METHOD OF FORMING SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A method of forming a silicon nitride film by using a plasma CVD method, where the silicon nitride film has abundant traps and is useful as a charge accumulation layer of a nonvolatile semiconductor memory device. A silicon nitride film having a lot of traps is formed by performing plasma CVD by using processing gases including a nitrogen gas and a gas of a compound formed of silicon atoms and chlorine atoms, and by setting a pressure in a processing container within a range between more than or equal to 0.1 Pa and less than or equal to 8 Pa, in a plasma CVD apparatus that performs film-formation by introducing microwaves in the processing container by using a planar antenna having a plurality of holes to generate plasma. | 08-16-2012 |
Minoru Honda, Nirasaki JP
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20120315745 | CRYSTALLINE SILICON FILM FORMING METHOD AND PLASMA CVD APPARATUS - A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si | 12-13-2012 |
Minoru Honda, Yamanashi JP
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20150093886 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step for growing the polycrystalline silicon layer on the base material by introducing microwaves for plasma excitation into the processing container, and introducing a silicon-containing raw material gas into the processing container. | 04-02-2015 |
20150162193 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals. | 06-11-2015 |
Minoru Honda, Tokyo JP
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20150245938 | HEALTH ORTHOSIS FOR FOOT - A foot health orthosis to be fitted with a toe includes a flexible ring-like retainer which can be fitted with the toe, and a cushion portion formed on a part of the retainer, which is thicker than the retainer and allowed to be held on a reverse surface of the toe in the fitted state. | 09-03-2015 |