Patent application number | Description | Published |
20100076227 | FLUIDIZED CATALYTIC PROCESS FOR PRODUCTION OF DIMETHYL ETHER FROM METHANOL - The present invention provides a fluidized catalytic process for production of dimethyl ether from methanol, wherein said process is carried out in a reactor in which the catalyst is in a fluidized state. Said process comprises the following steps of (1) feeding the methanol feedstock via two or more locations selected from the bottom, lower part, middle part and upper part of the reactor, contacting with the catalyst for preparation of dimethyl ether by methanol dehydration, carrying out the reaction of preparing dimethyl ether by methanol dehydration to obtain the reaction stream, separating said reaction stream to obtain a coked catalyst and a crude product primarily containing the target product, i.e. dimethyl ether; (2) totally or partially feeding the coked catalyst obtained in step (1) into a regenerator in a continuous or batch manner for regeneration via coke-burning, the regenerated catalyst being directly recycled to step (1) after being totally or partially cooled. | 03-25-2010 |
20140005032 | CATALYST CONTAINING A MODIFIED Y-TYPE ZEOLITE AND A PREPARATON PROCESS THEREOF | 01-02-2014 |
20140299511 | MODIFIED Y-TYPE ZEOLITE AND PREPARATION PROCESS AND USE THEREOF - The present invention provides a modified Y-type molecular sieve, characterized by having a unit cell size of 2.420-2.440 nm; as percent by weight of the modified Y-type molecular sieve, a phosphorus content of 0.05-6%, a RE | 10-09-2014 |
Patent application number | Description | Published |
20130068297 | Black Silicon Solar Cell and Its Preparation Method - A black silicon solar cell includes a metal back electrode, the crystal silicon, a black silicon layer, a passivation layer and a metal gate; wherein, the metal back electrode is located on the back surface of the crystal silicon, the black silicon layer is located on the crystal silicon, the passivation layer is located on the black silicon layer, the metal gate is located on the passivation layer. The fabrication method includes: carrying out pretreatment of the silicon wafer; preparing the black silicon layer on the surface of the pretreated silicon wafer by using plasma immersion ion implantation technology; preparing an emitter on the black silicon layer, and carrying out passivation treatment on the emitter to form the passivation layer; respectively preparing the metal back electrode and the metal gate on the back surface of the single crystal silicon wafer and the passivation layer, respectively. | 03-21-2013 |
20130071965 | In-Situ Fabrication Method for Silicon Solar Cell - An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control. | 03-21-2013 |
20130072007 | Method for Fabricating Black Silicon by Using Plasma Immersion Ion Implantation - A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process. | 03-21-2013 |