Ming-Te
Ming-Te Chang, Luchou TW
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20110185009 | RESOURCE SHARING DEVICES - The present invention is related to a resource sharing device in a communication system including multiple computing devices. The resource sharing device includes a first interface to couple with a first computing device, a second interface to couple with a second computing device, a function device to provide a function accessible to the first and second computing devices, and a switch device coupled with the function device, the switch device to generate a device descriptor of the function device so that when the first and second computing devices are coupled with the resource sharing device the device descriptor of the function device is sent to the first and second computing devices so as to share the function of the function device to the first and second computing devices and allow the first and second computing devices to be controllable at a time by the function of the function device. | 07-28-2011 |
Ming-Te Chang, New Taipei City TW
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20130019035 | APPARATUS FOR PEER-TO-PEER COMMUNICATION OVER A UNIVERSAL SERIAL BUS LINKAANM CHANG; Ming-TeAACI New Taipei CityAACO TWAAGP CHANG; Ming-Te New Taipei City TW - An apparatus for peer-to-peer communication over a Universal Serial Bus (USB) link, the apparatus comprising a USB 3.0 compliant switch to be coupled between a first peer unit and a second peer unit to form a first path, wherein each of the first peer unit and the second peer unit supports a USB type of communication a USB 2.0 compliant bridge to be coupled between the first peer unit and the second peer unit to form a second path a detector to detect the USB type of each of the first peer unit and the second peer unit and a controller to establish the USB type of communication between the first peer unit and the second peer unit over a USB link via the first path or the second path, wherein the controller is configure to selectively switch the USB link to the first path or the second path based on the USB types of the first peer unit and the second peer unit. | 01-17-2013 |
Ming-Te Chang, Luchou City TW
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20090013103 | Data sharing and transfer systems and methods - A communication system may include one or more communication interfaces, a controller, and a storage unit. The communication interface(s) may be configured to be coupled to first and second computing devices. The controller is configured to establish a communication channel between the first and second computing devices. The first and second communication interfaces are coupled with the controller, and the controller is further configured to receive from at least one of the first and second computing devices a communication command communicated in a first format consistent with an external storage device protocol. The storage unit is coupled with the controller and contains a set of instructions recognizable and executable by the first and second computing devices for converting communication requests from at least one of the first and second computing devices to the communication command. The controller is configured to be recognizable by at least one of the first and second computing devices as a storage device controller. | 01-08-2009 |
Ming-Te Chen, Taipei County TW
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20080229123 | Power transmission line for power supply clusters - A power transmission line for power supply clusters is electrically connected to a personal computer and a power supply cluster to allow the power supply cluster to receive ON/OFF signals and has a signal delay circuit to generate a time difference for the ON/OFF signals so that the power supply cluster delivers power output in an asynchronous fashion to drive the personal computer. | 09-18-2008 |
Ming-Te Chen, Hsin-Chu TW
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20140038421 | Deposition Chamber and Injector - A system and method are disclosed for processing semiconductors. An embodiment comprises a reaction chamber for processing wafers and having walls tapering at an angle that is greater than 0 degrees and less than about 35 degrees from a first end optionally having a diameter of 341 to 380 millimeters to a second end optionally having a diameter of 300 to 340 millimeters at a second end, with gas flow from the first end to the second end, and having at least one deposition injector near the first end of the reaction chamber and having a plurality of injector openings that disperse injection material across a cross section of the reaction chamber for forming a deposition layer. | 02-06-2014 |
20140256122 | Methods And Apparatus For Carbon Ion Source Head - Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed. | 09-11-2014 |
20140273294 | System and Method for Forming a Semiconductor Device - A system and method for forming a semiconductor device is provided. The system may measure characteristics of the substrate to determine an amount of induced stress on the substrate. The measured characteristics may include warpage, reflectivity and/or crack information about the substrate. The induced stress may be determined, at least in part, based on the measured characteristics. The system may compare the induced stress on the substrate to a maximum intrinsic strength of the substrate and adjust an anneal for the substrate based on the comparison. The adjustment may reduce or limit breakage of the substrate during the anneal. The system may control at least one of a peak anneal temperature and a maximum anneal duration for an anneal unit, which may perform an anneal on the substrate. The measurements and control may be performed ex-situ or in-situ with the anneal. | 09-18-2014 |
20150155352 | METHOD OF FORMING A SHALLOW TRENCH ISOLATION STRUCTURE - Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls. | 06-04-2015 |
20160111537 | CONTACT RESISTANCE REDUCTION TECHNIQUE - An embodiment is a method of manufacturing a semiconductor device, the method including forming a first gate over a substrate, forming a recess in the substrate adjacent the first gate, epitaxially forming a strained material stack in the recess, the strained material stack comprising at least three layers, each of the at least three layers comprising a dopant. The method further includes co-implanting the strained material stack with dopants comprising boron, germanium, indium, tin, or a combination thereof, forming a metal layer on the strained material stack, and annealing the metal layer and the strained material stack forming a metal-silicide layer. | 04-21-2016 |
Ming-Te Chen, Hsinchu City TW
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20140154414 | ATOMIC LAYER DEPOSITION APPARATUS AND METHOD - An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. | 06-05-2014 |
20140158155 | WAFER CLEANING - One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example. | 06-12-2014 |
20140179027 | ADJUSTING INTENSITY OF LASER BEAM DURING LASER OPERATION ON A SEMICONDUCTOR DEVICE - Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example. | 06-26-2014 |
20140272178 | MULTI-PLATEN ION IMPLANTER AND METHOD FOR IMPLANTING MULTIPLE SUBSTRATES SIMULTANEOUSLY - An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation. | 09-18-2014 |
20140273421 | High-Throughput System and Method for Post-Implantation Single Wafer Warm-Up - A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting. | 09-18-2014 |
20140273533 | Semiconductor Annealing Method Utilizing a Vacuum Environment - A semiconductor annealing method and system uses a vacuum pump to produce a vacuum environment in the annealing chamber to thereby remove undesired gas element influences. A control system obtains pressure and temperature measurements from the annealing chamber to control operation of the heating elements and vacuum pump to thereby maintain process integrity. | 09-18-2014 |
20150014807 | METHOD OF FORMING A SHALLOW TRENCH ISOLATION STRUCTURE - Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls. | 01-15-2015 |
20150187616 | MECHANISMS OF ADJUSTABLE LASER BEAM FOR LASER SPIKE ANNEALING - Mechanisms of adjustable laser beams for LSA (Laser Spike Annealing) are provided. A computing device receives input mask information relative to a silicon wafer, and analyzes the input mask information so as to generate a control signal. A laser generator generates a laser beam, and adjusts a beam length of the laser beam according to the control signal. Such mechanisms of the disclosure effectively eliminate the stitch effect on the silicon wafer and further increase the wafer yield. | 07-02-2015 |
20150221515 | METHOD AND APPARATUS FOR COOLING WAFER IN ION IMPLANTATION PROCESS - Embodiments of method for cooling a wafer in an ion implantation process are provided. A method for cooling the wafer in the ion implantation process includes placing the wafer in a process module. The method also includes performing the ion implantation process on the wafer and simultaneously cooling the wafer in the process module. The method further includes removing the wafer from the process module. In addition, the method includes heating up the wafer. | 08-06-2015 |
20150303080 | ADJUSTING INTENSITY OF LASER BEAM DURING LASER OPERATION ON A SEMICONDUCTOR DEVICE - Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example. | 10-22-2015 |
Ming-Te Chen, Tai-Chung Hsien TW
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20080203528 | METAL-INSULATOR-METAL CAPACITOR AND METHOD FOR FABRICATING THE SAME - A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor. | 08-28-2008 |
20090324851 | METHOD FOR FABRICATING A METAL-INSULATOR-METAL CAPACITOR - A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5. | 12-31-2009 |
Ming-Te Cheng, Renwu Shiang TW
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20100164666 | Structure and manufacturing process of a coil - A coil includes a coil individual, and a shell part; the coil individual includes a helical coil, which is made by winding a tiny metallic wire, and includes a helical body, and two end wire portions; the coil individual further includes a flexible print circuit, which has electricity-conducting layers on two sides of a middle thereof; the helical coil is positioned on the flexible print circuit, with the two end wire portions thereof and the electricity-conducting layers being joined together to form the frames of the coil individual; the coil individual is wrapped in the shell part with the frames thereof sticking out from the shell part; the frames are bent so as to be closely in touch with an outer side of the shell part. | 07-01-2010 |
Ming-Te Chou, Keelung City TW
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20080285937 | Video/audio display system and method - A video/audio display system includes a buffering module, a playing module and a controlling module. The buffering module temporarily stores video/audio data, which occupy a storage capacity of the buffering module. The playing module is electrically connected with the buffering module to play the video/audio data at a playing speed. The controlling module is electrically connected with the buffering module and the play module. A video/audio display method is also disclosed. | 11-20-2008 |
Ming-Te Chuang, Taoyuan Hsien TW
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20100051239 | DISSIPATION MODULE,FLAT HEAT COLUMN THEREOF AND MANUFACTURING METHOD FOR FLAT HEAT COLUMN - A manufacturing method for a flat heat column includes the steps of: providing a flat hollow tube, of which a first wick structure is disposed on the inner surface; providing at least one guiding device disposed within the flat heat tube for supporting the flat heat tube, wherein a second wick structure is disposed on the surface of the guiding device; connecting the first wick structure and the second wick structure for forming a continuous wick structure; and filling a working fluid and sealing both two ends of the flat hollow tube so as to form the flat heat column. A heat dissipation module and its flat heat column are also disclosed for applying to a heat element. The flat heat column can provide flowing path with optimum thermal conductive efficiency for the fluid therein. | 03-04-2010 |
20120328913 | ENERGY STORAGE DEVICE PACKAGE - An energy storage device package is provided. The energy storage device package includes a bottom cover and a top cover connected to form a hollow chamber to accumulate an electrolyte, a first electrode and a second electrode formed on the top cover and which stretch from the top cover to the hollow chamber to contact the electrolyte, and a safety valve. The first electrode includes an opening and an exhaust channel that extends between the hollow chamber and the opening. When a gas pressure in the hollow chamber is smaller than or equal to a threshold value, the safety valve in the first electrode blocks the exhaust channel. When the gas pressure is larger than the threshold value, the gas pushes to open the safety valve and flows out from the hollow chamber through the exhaust channel and the opening. | 12-27-2012 |
Ming-Te Huang, Taipei TW
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20080227492 | SIM Card Securing Mechanism for Mobile Phone - A SIM card securing mechanism for a mobile phone is described. A phone body has several positioning holes. One side of the securing plate is pivoted in the body to allow the securing plate to swivel relatively to the phone body. The securing plate has a plurality of elastic arms each of which has a protrusion. The securing plate is capable of being swiveled to a securing position relatively to the phone body to allow the protrusions to be fastened to the corresponding positioning holes via the elasticity of the elastic arms. Thus, the SIM card is sandwiched between the securing plate and the phone | 09-18-2008 |
Ming-Te Huang, New Taipei City TW
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20130335925 | PORTABLE ELECTRONIC DEVICE - A portable electronic device including a first body, a second body, and an assembling structure is provided. The assembling structure includes a first assembling unit and a second assembling unit. The first assembling unit is adapted to hidden in one of the first and the second bodies, and the second assembling unit is disposed and hidden in another one of the first and the second bodies. When the first body is close to the second body, the first assembling unit is protruded out of the first body or the second body, and assembled to the second assembling unit, such that the first and the second bodies are fixed to each other. | 12-19-2013 |
Ming-Te Lee, New Taipei City TW
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20130208096 | THREE DIMENSIONAL IMAGE CAPTURING DEVICE WITH DUAL LENSES AND ELECTRONIC APPARATUS HAVING THE SAME - A three dimensional image capturing device with dual lenses includes a first lens module including a sensor, a second lens module spaced apart from the first lens module by a predetermined distance and including a sensor, and a driving module capable of driving the first and second lens modules to move between first and second positions. The first and second lens modules are arranged in a row. Length directions of images captured by the sensors of the first and second lens modules are parallel to the row of the first and second lens modules in the first position and are perpendicular to the row of the first and second lens modules in the second position. | 08-15-2013 |
Ming-Te Lee, Taipei City TW
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20130278722 | LENS DOCKING STATION - A lens docking station used for detachably connecting to an electronic device is disclosed, wherein the electronic device includes a first lens module and a first transmission interface. The lens docking station includes a chute, a second lens module, and a second transmission interface. The chute is located next to the first lens module. The second lens module can slide along the chute to a position corresponding to the first lens module. The second transmission interface is used for communicating to the first transmission interface, and for electrically connecting to the second lens module, allowing the electronic device to control the second lens module to capture an image, and obtain the image; whereby the two images captured by the first lens module and the second lens module can be integrated to form a three-dimensional image. | 10-24-2013 |
Ming-Te Liao, New Taipei City TW
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20150336451 | Top Cover Support Structure of Open-Top Rear Cargo Bed of Truck - A top cover support structure is connected between an open-top rear cargo bed of a truck and a top cover to serve as a support structure for opening and closing the cover. The transmission linkage includes a fixed bar mounted to the open-top rear cargo bed, a movable bar mounted to the top cover, and first and the second swing bars each having ends pivotally connected to the fixed bar and the movable bar. A bottom bracket is mounted to a side panel of the open-top rear cargo bed to receive the fixed bar of the transmission linkage to attach thereto. A top cover retention seat is mounted to the top cover to receive the movable bar to attach thereto. A hydraulic (pneumatic) cylinder is pivotally connected to the open-top rear cargo bed and the top cover. | 11-26-2015 |
Ming-Te Liao, Taipei TW
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20080211257 | UPPER COVER SUPPORT STRUCTURE FOR AN AUTOMOBILE REAR LOADING PLATFORM - A support structure for an upper cover of an automobile rear loading platform, which is installed on two sides between a rear end portion of an automobile rear loading platform and an upper cover of the rear loading platform, wherein a base mount is fixed to a bottom plate of the rear loading platform, and a supporting arm is pin connected to the base mount. Another end of the supporting arm is pin connected to a suspension arm, and another end of the suspension arm is pin connected to a fixing mount that enables fixing to a bottom portion of the upper cover. An oil pressure rod is pin configured between the aforementioned supporting arm and the base mount, thereby providing support therebetween. Accordingly, good support and buffering effectiveness is achieved when opening and closing the upper cover. | 09-04-2008 |
Ming-Te Liao, Shulin City TW
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20090039699 | Complex wheel rim assembly structure - A complex wheel rim assembly structure contains a hub, a front member, a rear member, a leak-proof O-ring, and plural assembly members. The hub includes plural radial plates and assembly holes. An inward folding edge is close to a central hole of the front member and has plural assembly holes, and an outward expanding edge is at an exterior side of the front member. An inward folding edge is close to a central hole of the rear member and has plural assembly holes, and an outward expanding edge is at an exterior side of the rear member. Grooves are at exterior sides of the inward folding edges of the front and rear members, the leak-proof O-ring is between the two inward folding edges of the front and rear members, and the wheel rim is assembled through the plural assembly members. | 02-12-2009 |
Ming-Te Liu, Sunnyvale, CA US
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20160068961 | Method and Apparatus For Growing Binary, Ternary and Quaternary Materials on a Substrate - Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods. | 03-10-2016 |
Ming-Te Liu, Taipei TW
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20110122674 | REVERSE CONNECTION MTJ CELL FOR STT MRAM - Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower I | 05-26-2011 |
20120068279 | DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE - A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side. | 03-22-2012 |
20130015538 | MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MAKING THE SAMEAANM LIU; Ming-TeAACI TaipeiAACO TWAAGP LIU; Ming-Te Taipei TWAANM CHIANG; Tien-WeiAACI HsinchuAACO TWAAGP CHIANG; Tien-Wei Hsinchu TWAANM KAO; Ya-ChenAACI Fuxing TownshipAACO TWAAGP KAO; Ya-Chen Fuxing Township TWAANM CHEN; Wen-ChengAACI HsinchuAACO TWAAGP CHEN; Wen-Cheng Hsinchu TW - A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MIJ. | 01-17-2013 |
20130075839 | STRUCTURE AND METHOD FOR A MRAM DEVICE WITH AN OXYGEN ABSORBING CAP LAYER - The present disclosure provides a MTJ stack for an MRAM device. The MTJ stack includes a pinned ferromagnetic layer over a pinning layer; a tunneling barrier layer over the pinned ferromagnetic layer; a free ferromagnetic layer over the tunneling barrier layer; a conductive oxide layer over the free ferromagnetic layer; and a oxygen-based cap layer over the conductive oxide layer. | 03-28-2013 |
20140141533 | METHOD OF FABRICATING A MAGNETORESISTIVE RANDOM ACCESS STRUCTURE - One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer. | 05-22-2014 |
Ming-Te Lu, Jhonghe City TW
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20110311948 | Gas balance training bomb - A gas balance training bomb uses primarily a pressure of gas to substitute a gunpowder explosion to generate a gas thrust for pushing an eruption solid, powder, gas or liquid, so as to achieve an effect of simulating an explosion. The gas balance training bomb is formed with a passive gas chamber and an active gas chamber, the passive gas chamber stores the gas needed upon erupting and the active gas chamber stores the gas used for controlling an eruption time. Through the pressure difference between the active gas chamber and the passive gas chamber, the gas stored in the passive gas chamber is released momentarily to accomplish an operation of eruption, such that the effect of simulating the explosion can be achieved. | 12-22-2011 |
Ming-Te Lu, New Taipei City TW
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20140079565 | HELICAL IMPELLER TYPE LIQUID RING COMPRESSOR - A helical impeller liquid ring compressor includes a compressor body cooperating with first and second cover plates to define a compression chamber for receiving a helical impeller and a liquid. The compressor body has a compression section. The first cover plate seals a suction end of the compression chamber, and has an air inlet in fluid communication with the compression chamber. The second cover plate seals a pressure end of the compression chamber, and has an air outlet in fluid communication with the compression chamber. The impeller extends through the compression chamber, and includes a shaft rod and at least one helical blade. Upon rotation of the impeller, a liquid ring is generated from the liquid, and cooperates with the shaft rod and the blade to form air chambers. | 03-20-2014 |
Ming-Te Lu, Taipei City TW
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20150365728 | DISPLAY SYSTEM AND PROGRAM SELECTION METHOD THEREOF - A display system and a program selection method thereof are provided. In the method, an image including at least one viewer in a viewing area of the display system is captured by using an image capturing unit and accordingly at least one viewer identification is produced. A connection between the display system and the portable device of each viewer is established by using the viewer identification, and a program list is transmitted to the connected portable devices, so that each portable device evaluates a plurality of programs in the program list according to a preference record of the viewer and sends an evaluation result back to the display system. Finally, the evaluation result of each portable device is received, and all of the evaluation results are gathered to calculate statistics, so as to select the program to be played. | 12-17-2015 |
Ming-Te Tsai, Hsinchu City TW
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20160132535 | ACCELERATION METHOD FOR DATABASE USING INDEX VALUE OPERATION AND MIXED-MODE LEVELED CACHE - The present invention provides an acceleration method for database using index value operation and mixed-mode leveled cache. While building a database, an algorithm is adopted for operating a plurality of field conditions and giving an index value. At least a file record in the database satisfying the plurality of field conditions is related to the index value. While querying, the input plurality of field conditions are operated using the algorithm, giving the index value. According to the index value, the file records in the database satisfying the plurality of field conditions are listed. Thereby, the time for comparing the plurality of fields can be saved. | 05-12-2016 |
Ming-Te Wang, Nantou City TW
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20090241330 | BEARING ASSEMBLY TOOL FOR USE IN A BICYCLE - A bearing assembly tool for use in a bicycle comprises a contacting member, a handle, an engaging member, a screw, a press member, and a limiting member. By way of the screw, the contacting member and the engaging member, or the press member and the limiting member, a bearing can be assembled into or removed from a workpiece. | 10-01-2009 |
Ming-Te Wei, Tainan City TW
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20130234261 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain. | 09-12-2013 |
20150349088 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain. | 12-03-2015 |