Ming-Chang Kuo
Ming-Chang Kuo, Tu-Cheng TW
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20110063528 | ELECTRONIC APPARATUS - An electronic apparatus includes a main body and a projection mechanism. The main body is used for providing video signals. The projection mechanism includes a built-in mini-projector that can either be stored in the electronic apparatus or extended out of the electronic apparatus for use. The mini-projector is capable of receiving video signals and projecting corresponding images when the projection mechanism is extended, and stops the projection of images when retracted. | 03-17-2011 |
20130314322 | TOUCH PANEL AND INPUT SWITCHING METHOD - A touch panel includes a transparent sheet with a keyboard layout pattern formed thereon, a touch display panel, a processor and at least two input modules. The input modules are chosen from the group consisting of a keyboard input module, a handwriting input module and a touch input module. The processor includes a touch operation recognition module, a determining module and a switching module. The touch operation recognition module identifies touch pattern on the touch panel. The determining module compares the touch pattern identified by the touch operation recognition module to preset touch pattern(s) and generates commands according to the comparison result. The switching module receives the command from the determining module and actives a corresponding input module. | 11-28-2013 |
Ming-Chang Kuo, Lugang Township TW
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20090135653 | METHOD FOR PERFORMING OPERATIONS ON A MEMORY CELL - A method for performing operations on a memory cell is disclosed. The memory cell includes a substrate, a first doping region and a second doping region. The first doping region and the second doping region are formed on the substrate with a channel region therebetween. A dielectric layer is formed above the channel region and a conductive gate is formed over the dielectric layer. The method includes applying a first constant voltage for a first period to the conductive gate followed by applying a second constant voltage for a second period to the conductive gate repeatedly. The value of the first constant voltage is different from the value of the second constant voltage. A third constant voltage and a fourth voltage are applied to the first doping region and the second doping region respectively. | 05-28-2009 |
20110013462 | Method for Operating Memory - A memory operating method includes the following steps. First, a memory with a charge storage structure is provided. Next, the memory is biased to a first threshold voltage. Then, the memory is biased to a second threshold voltage. Next, the memory is biased to a third threshold voltage. The first threshold voltage is higher than a first level. The second threshold voltage is lower than a second level. The third threshold voltage is approximating or equal to the second level. | 01-20-2011 |
Ming-Chang Kuo, Changhua TW
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20100009504 | SYSTEMS AND METHODS FOR A HIGH DENSITY, COMPACT MEMORY ARRAY - A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory array is configured to store 4 bits of data per cell. Multi-level charge techniques can be used to increase the number of bit per cell and achieve further increased density for the memory array. | 01-14-2010 |
20100221851 | TEST STRUCTURE AND METHOD FOR DETECTING CHARGE EFFECTS DURING SEMICONDUCTOR PROCESSING - A semiconductor process test structure comprises an electrode, a charge-trapping layer, and a diffusion region. The test structure is a capacitor-like structure in which the charge-trapping layer will trap charges during various processing steps. Gate-induced drain leakage (GIDL) measurement techniques can then be used to characterize the charging status of the test structure. | 09-02-2010 |
Ming-Chang Kuo, Changhua County TW
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20080303077 | FLASH MEMORY WITH 4-BIT MEMORY CELL AND METHOD FOR FABRICATING THE SAME - A memory device having at least one memory cell, and each memory cell is configured to store multiple bits. Each bit is stored in a charge storage layer of the memory cell. The memory device can include a double gate structure that can store 4-bits per cell that expands the density of the non-volatile memory device such as flash memory. | 12-11-2008 |
20090129150 | METHOD FOR OPERATING MEMORY - A memory operating method includes the following steps. First, a memory including a charge storage structure is provided. Next, first type charges are injected into the charge storage structure such that a threshold level of the memory is higher than an erase level. Then, second type charges are injected into the charge storage structure such that the threshold level of the memory is lower than a predetermined bit level. Next, first type charges are injected into the charge storage structure such that the threshold level of the memory approximates to or is equal to the predetermined bit level. | 05-21-2009 |
20100208503 | THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A three-dimensional (3D) semiconductor structure with high density and method of fabricating the same are disclosed. The 3D semiconductor structure comprises at least a first memory cell and a second memory cell stacked on the first memory cell. The first memory cell comprises a first conductive line and a second conductive line. The second memory cell comprises another first conductive line opposite to the first conductive line of the first memory cell, and the second conductive line formed between said two first conductive lines of the first and second memory cells. The first and second memory cells share the second conductive line when the 3D semiconductor structure is programming and erasing, and each of the first and second memory cells has a diode. | 08-19-2010 |
Ming-Chang Kuo, Taichung City TW
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20100117769 | ELECTROMAGNETIC RELAY - An electromagnetic relay includes: a casing formed with an opening; a relay core member adapted for generating an electromagnetic field and inserted into the casing through the opening; an actuating set that is inserted into the relay core member, that is exposed from the casing, and that can be driven by a magnetic attraction force attributed to the electromagnetic field; a terminal set disposed on the casing and adapted to be actuated by the actuating set to thereby act as a switch mechanism; and a housing accommodating the casing, the relay core member, the actuating set and the terminal set. | 05-13-2010 |
20100182109 | Electromagnetic relay - An electromagnetic relay includes a casing, and a relay core member sealed in the casing and including an electromagnetic unit and a terminal unit. The electromagnetic unit includes a spool frame set having an engagement portion, a coil unit wound on the spool frame set, and a pair of coil winding pins. Each of the coil winding pins has a conductive portion exposed from one of opposite first sides of the spool frame set, and a coil winding portion extending along one of opposite second sides of the spool frame set. The terminal unit includes an engaging block having an engagement portion connected to the engagement portion of the spool frame set for preventing separation of the terminal unit from the electromagnetic unit, a terminal set, and an armature component. | 07-22-2010 |
Ming-Chang Kuo, Changhua City TW
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20090119906 | METHOD OF MAKING A RELAY - A method of making a relay includes: preparing a relay core member; coupling first, second and third terminals to the relay core member by moving the same horizontally relative to the relay core member such that terminal portions of the first, second and third terminals enter notches formed in the relay core member in a horizontal direction; and enclosing the relay core member, the first terminal, the second terminal, and the third terminal within a housing, and sealing the housing with resin. | 05-14-2009 |