Patent application number | Description | Published |
20120056750 | PRESSURE SENSOR DEVICE AND EMERGENCY INFORMING APPARATUS - Provided are a pressure sensor device and an emergency informing apparatus. The pressure sensor device includes a portable frame including a concave portion, a connector connected to the frame across the concave portion, a sensor disposed side by side with the connector and connected to the frame across the concave portion, a guard disposed to cover the connector and the sensor and extending in a direction perpendicular to a heading direction of the connector on a plane where the connector and the sensor are disposed, and a pressing unit disposed in the guard unit to cover the sensor and applying a pressure to the sensor. | 03-08-2012 |
20120203080 | PHOTOPLETHYSMOGRAPHY APPARATUS - A photoplethysmography apparatus is provided. The photoplethysmography includes a plurality of light-emitting units spaced apart from each other and configured to emit light to a measurement part, a light-receiving unit disposed in the center of the light-emitting units and configured to detect transmitted or reflected light from the measurement part by the light-emitting units, a signal pre-processing unit configured to amplify and filter a measurement signal of the light-receiving unit, and a signal processing unit configured to extract a heart rate of a target person using an output signal of the pre-processing unit. The light-emitting units and the light-receiving unit provide a plurality of optical paths, and the light-receiving unit detects spatially averaged reflected or transmitted light at the measurement part. | 08-09-2012 |
20140178608 | PRESSURE-SENSITIVE ADHESIVE - Provided are a pressure-sensitive adhesive, a polarizing plate, and a liquid crystal display device. The pressure-sensitive adhesive may be used to provide a polarizing plate which has a tensile modulus that varies in a thickness direction, and for example, which has a smaller thickness and a lighter weight, and also satisfies all of the physical properties required for the polarizing plate such as durability, water resistance, workability and light leakage preventability, and a liquid crystal display device including the same. | 06-26-2014 |
20140220264 | ADHESIVE COMPOSITION - Provided are a pressure sensitive adhesive composition, a protective film, an optical film and a display device. The pressure sensitive adhesive composition shows appropriate low-speed and high-speed peel strengths after formation of a cross-linked structure, and has a superior balance between the two. Accordingly, when the pressure sensitive adhesive composition is applied to a protective film, for example, a superior protection effect as well as easy peel-off upon high-speed peeling, which is advantageous for a high-speed process, are shown, and in addition, a superior antistatic property may be obtained during the process. | 08-07-2014 |
20150062503 | PRESSURE-SENSITIVE ADHESIVE COMPOSITION - Provided is a pressure-sensitive adhesive composition. The pressure-sensitive adhesive composition may form a pressure-sensitive adhesive having a fine phase separation structure by a block copolymer including a hard segment and a soft segment, and also has a high elastic modulus and an excellent pressure-sensitive adhesive property. For example, although applied to a thin polarizing plate on at least one surface of which a polarizer protective film is not used, the pressure-sensitive adhesive may allow the polarizing plate to exhibit excellent durability, moisture resistance, workability, a pressure-sensitive adhesive property and a light leakage inhibiting ability. | 03-05-2015 |
Patent application number | Description | Published |
20100048003 | Plasma processing apparatus and method thereof - A plasma processing apparatus using a capacitive coupled plasma (CCP) source requiring a low pressure range of about 25 mT or less and a method thereof are disclosed. Plasma source power may be applied in a pulse mode to either one of upper and lower electrodes in a chamber, which generates plasma and processes a semiconductor substrate, and plasma maintaining power may be continuously applied to the other of the upper and lower electrodes, such that a stable pulse plasma process may be performed in a low pressure range of about 25 mT or less. | 02-25-2010 |
20100326600 | PLASMA DRY ETCHING APPARATUS HAVING COUPLING RING WITH COOLING AND HEATING UNITS - A plasma dry etching apparatus includes a pedestal in a process chamber, the pedestal being configured to support a wafer, a cathode electrode and a plate electrode in the process chamber, the cathode and plate electrodes being configured to apply radio-frequency (RF) power, an edge ring on an edge of the pedestal, a coupling ring having a first side on the pedestal and a second side on the edge ring, an edge cooling unit in the coupling ring, the edge cooling unit being configured to cool the edge ring to drop a temperature of an extreme edge of the wafer, and an edge heating unit in the coupling ring, the edge heating unit being configured to heat the edge ring to raise the temperature of an extreme edge of the wafer. | 12-30-2010 |
20110312172 | Methods of Forming Patterns and Methods of Manufacturing Semiconductor Devices Using the Same - In a method forming patterns, a layer on a substrate is patterned by a first etching process using an etch mask to form a plurality of first preliminary patterns and a plurality of second preliminary patterns. The second preliminary patterns are spaced apart from each other at a second distance larger than a first distance at which the first preliminary patterns are spaced apart. First and second coating layers are formed on sidewalls of the first and second preliminary patterns, respectively, and the first and second coating layers and portions of the first and second preliminary patterns are removed by a second etching process using the etch mask to form a plurality of first patterns and a plurality of second patterns. The first patterns have widths that are smaller than widths of the first preliminary patterns. The first patterns may have generally vertical sidewalls relative to the substrate. | 12-22-2011 |
20120115331 | METHODS OF FORMING FINE PATTERNS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES - Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may be formed using the medium pattern. According to the methods, the PR pattern may have a low aspect ratio so that a pattern can be transferred using a PR layer with a small thickness without collapsing the PR pattern. | 05-10-2012 |
20150056805 | METHODS OF FORMING SEMICONDUCTOR DEVICE USING BOWING CONTROL LAYER - A bowing control pattern is formed on an intermediate layer. A hardmask pattern is formed on the bowing control layer. The hardmask pattern has a first opening, and the bowing control pattern has a second opening. A third opening passes through the intermediate layer and is connected to the second opening. The bowing control pattern includes first and second edges on a lower end of the second opening, and a third edge on an upper end of the second opening. When a first point on the first edge, a second point on the second edge, and a third point on a horizontal line passing through the third edge are defined, an intersecting angle between a first side from the first point to the second point, and a second side from the second point to the third point is from about 50° to about 80°. | 02-26-2015 |
20150079757 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device is provided and includes forming one or more molding layers on a substrate, forming a silicon mask layer, first and second mask layers, and a mask pattern having a different etch selectivity to be vertically aligned on the molding layer, patterning the second mask layer with a second mask pattern using the mask pattern as an etching mask, patterning the first mask layer with a first mask pattern using the second mask pattern as an etching mask, patterning the silicon mask layer with a silicon mask pattern using the first mask pattern as an etching mask, changing the silicon mask pattern to a hard mask pattern having an improved etch selectivity by doping impurities into the silicon mask pattern, forming a hole having a high aspect ratio contact (HARC) structure vertically passing through the molding layer using the hard mask pattern as an etching mask, and removing the hard mask pattern. | 03-19-2015 |