Patent application number | Description | Published |
20090146049 | OPTOELECTRONIC DEVICE ASSEMBLY - An embodiment of present invention discloses an optoelectronic device package including a first auxiliary energy receiver having a first energy inlet and a side wall for substantially directing energy far away from the first energy inlet; an optical element optically coupled to the first auxiliary energy receiver and having a recess facing the first energy inlet; and an optoelectronic device optically coupled to the optical element and receiving the energy from the first energy inlet. | 06-11-2009 |
20090302334 | Light-emitting element array - A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel. | 12-10-2009 |
20100213493 | LIGHT-EMITTING DEVICE - A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer. | 08-26-2010 |
20100308355 | LIGHT-EMITTING DEVICE HAVING A THINNED STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support. | 12-09-2010 |
20100314657 | OPTOELECTRONIC DEVICE - A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer. | 12-16-2010 |
20110089444 | LIGHT-EMITTING ELEMENT - A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection. | 04-21-2011 |
20110108879 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 05-12-2011 |
20120012867 | MULTI-DIMENSIONAL LIGHT-EMITTING DEVICE - The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light. | 01-19-2012 |
20120104455 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer. | 05-03-2012 |
20120231560 | LIGHT-EMITTING DEVICE HAVING A THINNED STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support. | 09-13-2012 |
20120326185 | LIGHT EMITTING DEVICE - A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light emitting element is adapted to provide a light source upon connection of the two electric conductors with the power source, and the at least one correction element allows the light emitting element to have functions of temperature compensation, voltage correction, or surge absorption. | 12-27-2012 |
20130001624 | LIGHT-EMITTING DEVICE - A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack. | 01-03-2013 |
20130029440 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 | 01-31-2013 |
20130033168 | WAVELENGTH CONVERSION STRUCTURE, MANUFACTURING METHODS THEREOF, AND LIGHTING EMITTING DEVICE INCLUDING THE WAVELENGTH CONVERSION STRUCTURE - A wavelength conversion structure comprises a phosphor layer comprising a first part and a second part formed on the first part, wherein the first part and the second part have a plurality of pores, a first material layer formed in the plurality of pores of the first part, a second material layer formed in the plurality of pores of the second part and a plurality of phosphor particles, wherein the plurality of phosphor particles is distributed in the first material layer and the second material layer. | 02-07-2013 |
20130181245 | LIGHT-EMITTING DEVICE - A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first part of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer;; and a first electrode formed on the first portion of the first transparent conductive oxide layer. | 07-18-2013 |
20130207135 | LIGHT EMITTING ELEMENT - A light emitting element is provided in this application, including a carrier; a conductive connecting structure disposed on the carrier and including a transparent conductive connecting layer; and an epitaxial stack structure disposed on the conductive connecting structure and including a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width. | 08-15-2013 |
20130292643 | LIGHT-EMITTING DEVICE - A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode. | 11-07-2013 |
20130292731 | LIGHT-EMITTING DEVICE - A light-emitting device wherein the light-emitting device having a corner, comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the upper surface of the transparent conductive oxide layer; a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on partial of the transparent conductive oxide layer and the second electrode; and a reflective layer formed on the upper surface of the planarization layer wherein the projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode. | 11-07-2013 |
20130314001 | Light-Emitting Device with Temperature Compensation - The present application provides a light-emitting device comprising a first light-emitting diode group; a second light-emitting diode group electrically connected to the first light-emitting diode group in parallel; and a temperature compensation. element electrically connected to the second light-emitting diode group in series; and a first switch device connected between the second light-emitting diode group and the temperature compensation element. | 11-28-2013 |
20130341667 | LIGHT-EMITTING DEVICE - A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width. | 12-26-2013 |
20140061708 | LIGHT-EMITTING DEVICE - A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer. | 03-06-2014 |
20140093991 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES - A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature. | 04-03-2014 |
20140186979 | LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF - The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units. | 07-03-2014 |