Miler
Andreas Miler, Kaufering DE
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20110168977 | SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE - An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints. | 07-14-2011 |
Douglas P. Miler, New Berlin, WI US
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20130276902 | Central Tire Inflation Wheel Assembly and Valve - The present invention is a central tire inflation system and a valve for use in the system including a casing securable to the rim of a vehicle in communication with the tire that houses a main body connectable to a pressurized fluid supply of the central tire inflation system, and a valve member moveable within the main body to control the flow of air through the valve. The valve can be mounted flush on the exterior surface of the rim or in a recessed position within the rim, and can be connected to a manifold that is able to control the flow of pressurized fluid from the central tire inflation system to each valve and tire connected to the valve. The operation of the manifold and pressurized fluid supply can be controlled utilizing a controller operably connected to the manifold and fluid supply. | 10-24-2013 |
Fabienne Miler, Brimington GB
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20100147731 | WATER SOLUBLE CONTAINER - A filled water-soluble injection moulded container ( | 06-17-2010 |
Josef Miler, Palo Alto, CA US
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20100314093 | VARIABLE HEAT EXCHANGER - Various apparatus and methods for thermally managing a heat generating device. In one aspect, a method of thermally managing a heat generating device is provided that includes placing a heat exchanger in thermal communication with the heat generating device. The heat exchanger has an interior space. A membrane is in the interior space between a first chamber and a second chamber. The membrane has a gas impermeable portion and at least one gas permeable portion to enable vapor bubbles in the second chamber to pass through the membrane at the at least one gas permeable portion and into the first chamber. A liquid is moved through the second chamber. | 12-16-2010 |
Laurence Miler, Beijing CN
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20120012245 | Production method for a panel - A production method for the production of a panel with a protective layer wherein the panel is produced by lamination of a protective layer on a layer of core material with insulating vacancies and this on one or both sides of the core material by means of a bonding layer between the protective layer and the core material. | 01-19-2012 |
Matthew L. Miler, Fremont, CA US
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20090140828 | METHODS AND APPARATUS FOR CONTROLLING CHARACTERISTICS OF A PLASMA - Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection. | 06-04-2009 |
Timothy J. Miler, Ipswich, MA US
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20100155600 | METHOD AND APPARATUS FOR PLASMA DOSE MEASUREMENT - An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process. | 06-24-2010 |