Patent application number | Description | Published |
20140213007 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 07-31-2014 |
20140239353 | METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT - A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer. | 08-28-2014 |
20140264645 | INTEGRATED STRUCTURE WITH BIDIRECTIONAL VERTICAL ACTUATION - A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface. | 09-18-2014 |
20140264656 | MEMS ACOUSTIC SENSOR WITH INTEGRATED BACK CAVITY - A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment. | 09-18-2014 |
20140349434 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 11-27-2014 |
20150102390 | INTEGRATED CMOS BACK CAVITY ACOUSTIC TRANSDUCER AND THE METHOD OF PRODUCING THE SAME - A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity. | 04-16-2015 |
20150266723 | DIFFERENTIAL SENSING ACOUSTIC SENSOR - A MEMS device includes a first plate coupled to a second plate and a fixed third plate formed on a first substrate. The first and second plates are displaced in the presence of an acoustic pressure differential across the surfaces of the first plate. The MEMS device also includes a first electrode formed on the third plate and a second electrode formed on the second substrate. The first, second plate, and third plates are contained in an enclosure formed by a first and second substrates. The device includes an acoustic port to expose the first plate to the environment. The MEMS device also includes a first gap formed between the second and third plates and a second gap formed between the second plate and the second electrode. The displacement of the second plate causes the first gap to change inversely to the second gap. | 09-24-2015 |
20150336792 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 11-26-2015 |