Patent application number | Description | Published |
20100144123 | METHODS OF FORMING A COMPOUND SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION REGION - Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region. | 06-10-2010 |
20110140168 | AVALANCHE PHOTOTECTOR WITH INTEGRATED MICRO LENS - Provided is an avalanche photodetector with an integrated micro lens. The avalanche photodetector includes a light absorbing layer on a semiconductor substrate, an amplification layer on the light absorbing layer, a diffusion layer within the amplification layer, and the micro lens disposed corresponding to the diffusion layer. The micro lens includes a first refractive layer and a second refractive layer having a refractive index less than that of the first refractive layer. | 06-16-2011 |
20120162373 | DYNAMIC RANGE THREE-DIMENSIONAL IMAGE SYSTEM - Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal. | 06-28-2012 |
20130153962 | AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME - The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region. | 06-20-2013 |
20130327926 | FPA MODULE FOR OBTAINING 3-DIMENSIONAL IMAGE - Provided is an FPA module capable of further improving a quality of an obtained 3-dimensional image by adjusting an interval of an arrangement of optical detectors and a size of the optical detector within an FPA module for obtaining the 3-dimensional image. An FPA module for obtaining a 3-dimensional image according to an exemplary embodiment of the present disclosure includes a plurality of light detectors configured to detect light reflected from a monitoring target, in which the plurality of light detectors is disposed at different intervals according to positions. | 12-12-2013 |
20130341486 | APPARATUS FOR OBTAINING 3D INFORMATION USING PHOTODETECTOR ARRAY - The present disclosure relates to an apparatus for obtaining 3D information using a photodetector array. The apparatus for obtaining 3D information includes: a light source unit configured to generate an optical signal of a predetermined wavelength band; a light transmission optical lens unit provided on a path of the optical signal and configured to emit the optical signal output from the light source unit in parallel or at a predetermined angle; an optical scanning unit configured to scan the light output from the light transmission optical lens unit to a surface of an object to be measured; a light reception optical lens unit configured to collect the light reflected from the surface of the object; and a photodetection unit configured to convert collected optical signals into respective electrical signals by arraying one or more photodetectors such that light reception portions thereof are collected at a center. | 12-26-2013 |
20140042581 | AVALANCHE PHOTODIODE WITH A GUARD RING STRUCTURE AND METHOD THEREOF - Disclosed are an avalanche photodiode with a guard ring structure that relieves edge breakdown by an external voltage which is applied through a metal pad which is attached to the guard ring and a manufacturing method thereof. An avalanche photodiode with a guard ring structure includes a plurality of semiconductor layers laminated on a substrate; an active region partially formed above the semiconductor layers; a guard ring which is formed above the semiconductor layers and disposed so as to be spaced apart from the active region and have a ring shape that encloses the active region; and a connecting unit formed on the semiconductor layers to be electrically connected to the guard ring so as to apply an external voltage to the guard ring region. Therefore, the external voltage is applied to the guard ring of the avalanche diode through the connecting unit to relieve the edge breakdown. | 02-13-2014 |
20140175511 | AVALANCHE PHOTODIODE - An avalanche photodiode according to the inventive concept includes a substrate, light absorption layers on the substrate, clad layers on the light absorption layers, and active regions in the clad layers. The light absorption layers, the clad layers, and the active regions constitute unit cells. Each of the unit cells has a fan-shape. | 06-26-2014 |
20140240691 | LASER RADAR SYSTEM AND METHOD FOR ACQUIRING 3-D IMAGE OF TARGET - Disclosed are a laser radar system and a method for acquiring an image of a target, and the laser radar system includes: a beam source to emit the laser beam; a beam deflector disposed between the beam source and the target, and configured to deflect the laser beam emitted from the beam source in a scanning direction of the target as time elapses; and an optical detector configured to detect the laser beam reflected from the target, which is provided a plurality of beam spots having a diameter D | 08-28-2014 |
20150079722 | AVALANCHE PHOTODIODE WITH A GUARD RING STRUCTURE AND METHOD THEREOF - Disclosed are an avalanche photodiode with a guard ring structure that relieves edge breakdown by an external voltage which is applied through a metal pad which is attached to the guard ring and a manufacturing method thereof. An avalanche photodiode with a guard ring structure includes a plurality of semiconductor layers laminated on a substrate; an active region partially formed above the semiconductor layers; a guard ring which is formed above the semiconductor layers and disposed so as to be spaced apart from the active region and have a ring shape that encloses the active region; and a connecting unit formed on the semiconductor layers to be electrically connected to the guard ring so as to apply an external voltage to the guard ring region. Therefore, the external voltage is applied to the guard ring of the avalanche diode through the connecting unit to relieve the edge breakdown. | 03-19-2015 |
Patent application number | Description | Published |
20100079178 | IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR - Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode. | 04-01-2010 |
20100079662 | IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR - Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode. | 04-01-2010 |
20100110258 | IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR - Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode. | 05-06-2010 |
20100133590 | SHARED PHOTODIODE IMAGE SENSOR - An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling. | 06-03-2010 |
20100140662 | OPTICAL RECEIVER AND METHOD OF FORMING THE SAME - Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector. | 06-10-2010 |
20120156826 | METHOD OF FABRICATING AVALANCHE PHOTODIODE - A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate. | 06-21-2012 |
20120187279 | METHOD OF SENSING OF LOW-VOLTAGE IMAGE SENSOR - A sensing method of an image sensor. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device. | 07-26-2012 |