Patent application number | Description | Published |
20120280384 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A fabrication method of a semiconductor structure includes providing a chip having at least an electrode pad, forming a titanium layer on the electrode pad, forming a dielectric layer on the chip and a portion of the titanium layer, forming a copper layer on the dielectric layer and the titanium layer, forming a conductive pillar on the copper layer corresponding in position to the titanium layer, and removing a portion of the copper layer that is not covered by the conductive pillar. When the portion of the copper layer is removed by etching, undercutting of the titanium layer is avoided since the titanium layer is covered by the dielectric layer, thereby providing an improved support for the conductive pillar to increase product reliability. | 11-08-2012 |
20130187285 | CARRIER, SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A fabrication method of a semiconductor package includes the steps of: providing a carrier having a concave portion and a releasing layer formed on a surface thereof; disposing a chip on the releasing layer in the concave portion; forming an encapsulant on the chip and the releasing layer; removing the releasing layer and the carrier; and forming a circuit structure on the encapsulant and the chip. The design of the concave portion facilitates alignment of the chip to prevent it from displacement, thereby improving the product reliability. A semiconductor package fabricated by the fabrication method is also provided. | 07-25-2013 |
20130228915 | SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A fabrication method of a semiconductor package includes the steps of: forming a release layer on a carrier having concave portions; disposing chips on the release layer in the concave portions of the carrier; forming an encapsulant on the chips and the release layer; forming a bonding layer on the encapsulant; removing the release layer and the carrier so as to expose the active surfaces of the chips; and forming a circuit structure on the encapsulant and the chips. Since the release layer is only slightly adhesive to the chips and the encapsulant, the present invention avoids warpage of the overall structure during a thermal cycle caused by incompatible CTEs. | 09-05-2013 |
20130341774 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A semiconductor package is provided, including: an insulating layer; a semiconductor element embedded in the insulating layer; an adhesive body embedded in the insulating layer, wherein a portion of the semiconductor element is embedded in the adhesive body; a patterned metal layer embedded in the adhesive body and electrically connected to the semiconductor element; and a redistribution structure formed on the insulating layer and electrically connected to the patterned metal layer. By embedding the semiconductor element in the adhesive body, the present invention can securely fix the semiconductor element at a predetermined position without any positional deviation, thereby improving the product yield. | 12-26-2013 |
20140015125 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor package is provided, including: providing a carrier having a plurality of chip areas defined thereon, and forming a connection unit on each of the chip areas; disposing a semiconductor element on each of the connection units; forming an insulating layer on the carrier and the semiconductor elements; and forming on the insulating layer a circuit layer electrically connected to the semiconductor elements. Since being formed only on the chip areas instead of on the overall carrier as in the prior art, the connection units are prevented from expanding or contracting during temperature cycle, thereby avoiding positional deviations of the semiconductor elements. | 01-16-2014 |
20140021629 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor package is provided, including: disposing a plurality of semiconductor elements on a carrier through an adhesive layer in a manner that a portion of the carrier is exposed from the adhesive layer; forming an encapsulant to encapsulate the semiconductor elements; removing the adhesive layer and the carrier to expose the semiconductor elements; and forming a build-up structure on the semiconductor elements. Since the adhesive layer is divided into a plurality of separated portions that will not affect each other due to expansion or contraction when temperature changes, the present invention prevents positional deviations of the semiconductor elements during a molding process, thereby increasing the alignment accuracy. | 01-23-2014 |
20140154842 | CARRIER, SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A fabrication method of a semiconductor package includes the steps of: providing a carrier having a concave portion and a releasing layer formed on a surface thereof; disposing a chip on the releasing layer in the concave portion; forming an encapsulant on the chip and the releasing layer; removing the releasing layer and the carrier; and forming a circuit structure on the encapsulant and the chip. The design of the concave portion facilitates alignment of the chip to prevent it from displacement, thereby improving the product reliability. A semiconductor package fabricated by the fabrication method is also provided. | 06-05-2014 |
20140252603 | SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE VIAS - A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield. | 09-11-2014 |
20150072517 | FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE - A fabrication method of a semiconductor structure includes providing a chip having at least an electrode pad, forming a titanium layer on the electrode pad, forming a dielectric layer on the chip and a portion of the titanium layer, forming a copper layer on the dielectric layer and the titanium layer, forming a conductive pillar on the copper layer corresponding in position to the titanium layer, and removing a portion of the copper layer that is not covered by the conductive pillar. When the portion of the copper layer is removed by etching, undercutting of the titanium layer is avoided since the titanium layer is covered by the dielectric layer, thereby providing an improved support for the conductive pillar to increase product reliability. | 03-12-2015 |