Patent application number | Description | Published |
20080216743 | CHEMICAL PRECURSOR AMPOULE FOR VAPOR DEPOSITION PROCESSES - Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port. | 09-11-2008 |
20080227291 | FORMATION OF COMPOSITE TUNGSTEN FILMS - Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process. | 09-18-2008 |
20080274279 | NOBLE METAL LAYER FORMATION FOR COPPER FILM DEPOSITION - Embodiments described herein relate to depositing a cobalt-containing layer by a cyclical deposition process while forming interconnects on a substrate. In one embodiment, a method for forming an interconnect structure is provided which includes depositing a tungsten-containing barrier layer over an exposed contact metal surface within an aperture formed in an insulating material disposed on a substrate, forming a cobalt-containing layer on the tungsten-containing barrier layer using a cyclical deposition process by sequentially exposing the substrate to a cobalt precursor gas and a silicon reducing gas, wherein the cobalt precursor gas contains a cobalt precursor having a cyclopentadienyl ligand, and depositing a copper material on the cobalt-containing layer. | 11-06-2008 |
20080274299 | APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING - In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit. | 11-06-2008 |
20090004850 | PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS - Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater. | 01-01-2009 |
20090095621 | SUPPORT ASSEMBLY - A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body. | 04-16-2009 |
20090104764 | Methods and Systems for Forming at Least One Dielectric Layer - A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer. | 04-23-2009 |
20090104782 | SELECTIVE ETCHING OF SILICON NITRIDE - Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H | 04-23-2009 |
20090111280 | METHOD FOR REMOVING OXIDES - A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate. | 04-30-2009 |
20090142474 | RUTHENIUM AS AN UNDERLAYER FOR TUNGSTEN FILM DEPOSITION - Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer. | 06-04-2009 |
20090191703 | PROCESS WITH SATURATION AT LOW ETCH AMOUNT FOR HIGH CONTACT BOTTOM CLEANING EFFICIENCY FOR CHEMICAL DRY CLEAN PROCESS - A method for removing oxides from the bottom surface of a contact hole is provided. The method provides efficient cleaning of the bottom surface without distortion of the contact hole upper and sidewall surfaces. | 07-30-2009 |
20090214786 | MULTI-STATION DEPOSITION APPARATUS AND METHOD - A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles. | 08-27-2009 |
20090218324 | DIRECT REAL-TIME MONITORING AND FEEDBACK CONTROL OF RF PLASMA OUTPUT FOR WAFER PROCESSING - A method and apparatus for controlling power output of a capacitatively-coupled plasma are provided. A detector is disposed on the power delivery conduit carrying power to one electrode to detect fluctuations in power output to the electrode. The detector is coupled to a signal generator, which converts the RF input signal to a constant control signal. A controller adjusts power input to the RF generator by comparing the control signal to a reference. | 09-03-2009 |
20090239378 | METHODS FOR FORMING A TITANIUM NITRIDE LAYER - Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate. | 09-24-2009 |
20090269930 | THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE - A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer. | 10-29-2009 |
20090269934 | PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE - Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound. | 10-29-2009 |
20090280640 | DEPOSITION AND DENSIFICATION PROCESS FOR TITANIUM NITRIDE BARRIER LAYERS - In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×10 | 11-12-2009 |
20090305500 | Contact Clean by Remote Plasma and Repair of Silicide Surface - Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface. | 12-10-2009 |
20090308318 | APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING - In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit. | 12-17-2009 |
20100062149 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS - Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA). | 03-11-2010 |
20100062614 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS - Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT). | 03-11-2010 |
20100075494 | INTEGRATION OF ALD TANTALUM NITRIDE FOR COPPER METALLIZATION - A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber. | 03-25-2010 |
20100099263 | NF3/H2 REMOTE PLASMA PROCESS WITH HIGH ETCH SELECTIVITY OF PSG/BPSG OVER THERMAL OXIDE AND LOW DENSITY SURFACE DEFECTS - A method and apparatus for selectively etching doped semiconductor oxides faster than undoped oxides. The method comprises applying dissociative energy to a mixture of nitrogen trifluoride and hydrogen gas remotely, flowing the activated gas toward a processing chamber to allow time for charged species to be extinguished, and applying the activated gas to the substrate. Reducing the ratio of hydrogen to nitrogen trifluoride increases etch selectivity. A similar process may be used to smooth surface defects in a silicon surface. | 04-22-2010 |
20100101602 | PLASMA CLEANING APPARATUS AND METHOD - Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. Periodically, a PVD chamber may need to be cleaned to remove material that has built up in undesired locations within the chamber. Additionally, the sputtering target may need to be replaced. By removing the sputtering target and placing a grounded chamber lid in its place, the chamber may be plasma cleaned. The susceptor within the chamber may be electrically biased with an RF current. A stationary magnet assembly may be substantially centered behind the grounded lid to focus the cleaning plasma on the susceptor. Following the plasma cleaning, the magnet and lid may be removed and the sputtering target may be coupled to the chamber to continue processing. | 04-29-2010 |
20100129958 | METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION - Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer. | 05-27-2010 |
20100129982 | INTEGRATION SEQUENCES WITH TOP SURFACE PROFILE MODIFICATION - Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess. | 05-27-2010 |
20100252417 | HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS - Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber. | 10-07-2010 |
20100316800 | MULTI-STATION DEPOSITION APPARATUS AND METHOD - A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles. | 12-16-2010 |
20110086509 | PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS - Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi | 04-14-2011 |
20110104897 | CONTACT CLEAN BY REMOTE PLASMA AND REPAIR OF SILICIDE SURFACE - Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface. | 05-05-2011 |
20110124192 | PROCESS FOR FORMING COBALT-CONTAINING MATERIALS - Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material. | 05-26-2011 |
20110151676 | METHODS OF THIN FILM PROCESS - A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space. | 06-23-2011 |
20110263115 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 10-27-2011 |
20110265721 | PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES - An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly. | 11-03-2011 |
20110294258 | METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION - Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for profile modification prior to filling a structure, such as a trench or a via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a structure by exposing the structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer. | 12-01-2011 |
20120214303 | PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS - Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi | 08-23-2012 |
20120220116 | Dry Chemical Cleaning For Semiconductor Processing - A deposition process including a dry etch process, followed by a deposition process of a high-k dielectric is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is energized to form a plasma of reactive gas which reacts with an oxide on the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose a substrate surface. The substrate surface is substantially free of oxides. Deposition is then used to form a layer on the substrate surface. | 08-30-2012 |
20120225191 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120225192 | Apparatus And Process For Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120225558 | METHODS FOR CONTACT CLEAN - Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure. | 09-06-2012 |
20120264291 | PROCESS FOR FORMING COBALT-CONTAINING MATERIALS - Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material. | 10-18-2012 |
20120267346 | SUPPORT ASSEMBLY - A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. | 10-25-2012 |
20120322250 | N-Metal Film Deposition With Initiation Layer - Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer. | 12-20-2012 |
20120322262 | N-Metal Film Deposition With Initiation Layer - Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaC | 12-20-2012 |
20130087447 | METHODS OF PREVENTING PLASMA INDUCED DAMAGE DURING SUBSTRATE PROCESSING - Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma. | 04-11-2013 |
20130098477 | Apparatus and Method for Providing Uniform Flow of Gas - Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels. | 04-25-2013 |
20130115383 | DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS - Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: | 05-09-2013 |
20130122697 | Doping aluminum in tantalum silicide - Provided are methods of providing aluminum-doped TaSi | 05-16-2013 |
20130137267 | Methods for Atomic Layer Etching - Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate. | 05-30-2013 |
20130140698 | Doped Tantalum Nitride for Copper Barrier Applications - Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer. | 06-06-2013 |
20130143415 | Multi-Component Film Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate. | 06-06-2013 |
20130193108 | METHODS OF END POINT DETECTION FOR SUBSTRATE FABRICATION PROCESSES - Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput. | 08-01-2013 |
20130200518 | Devices Including Metal-Silicon Contacts Using Indium Arsenide Films and Apparatus and Methods - Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide. | 08-08-2013 |
20130263944 | Apparatus and Method for Providing Uniform Flow of Gas - Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels. | 10-10-2013 |
20130292806 | Methods For Manganese Nitride Integration - Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer. | 11-07-2013 |
20140017408 | Deposition Of N-Metal Films Comprising Aluminum Alloys - Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl | 01-16-2014 |
20140076234 | MULTI CHAMBER PROCESSING SYSTEM - A multi-chamber processing system includes a transfer chamber, a first processing chamber outfitted to perform CVD, a second processing chamber, and a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber. The second processing chamber may include one or a combination of a first electrode and a second electrode comprising a plasma cavity formed therein. | 03-20-2014 |
20140094036 | DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT - Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH | 04-03-2014 |
20140106565 | Methods For Atomic Layer Etching - Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate. | 04-17-2014 |
20140112824 | Deposition Of Films Comprising Aluminum Alloys With High Aluminum Content - Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same. | 04-24-2014 |
20140113445 | AL BOND PAD CLEAN METHOD - Embodiments of the present disclosure provide a method for controlling moisture from substrate being processed. Particularly, embodiments of the present disclosure provide methods for removing moisture from polymer materials adjacent bond pad areas. One embodiment of the present includes providing a moisture sensitive precursor and forming a compound from a reaction between the moisture to be controlled and the moisture sensitive precursor. | 04-24-2014 |
20140120712 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 05-01-2014 |
20140120723 | METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN - Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl | 05-01-2014 |
20140137961 | MODULAR CHEMICAL DELIVERY SYSTEM - In some embodiments, a modular chemical delivery system may include a plurality of gas delivery units directly and removably coupled to each other, wherein each gas delivery unit includes a body with a first volume, a plurality of gas sticks disposed in the first volume, wherein each of the plurality of gas sticks is configured to be coupled to at least one gas supply through one or more inlets in the body, a plurality of valves disposed in the first volume, each valve respectively disposed in line with a corresponding one of the at least one gas supply, at least one outlet conduit to deliver at least one process gas to one or more gas delivery zones in a process chamber, and an electrical controller disposed in the first volume and configured to control the plurality of gas sticks and the plurality of valves. | 05-22-2014 |
20140165911 | APPARATUS FOR PROVIDING PLASMA TO A PROCESS CHAMBER - Embodiments of apparatus for providing plasma to a process chamber are provided. In some embodiments, an apparatus may include a first ground plate; an electrode disposed beneath and spaced apart from the first ground plate by a first electrical insulator to define a first gap between the first ground plate and the electrode; a second ground plate disposed beneath and spaced apart from the electrode by a second electrical insulator to define a second gap between the electrode and the second ground plate; a gas inlet to provide a process gas to the first gap; a plurality of through holes disposed through the electrode coupling the first gap to the second gap; and a plurality of first gas outlet holes disposed through the second ground plate to fluidly couple the second gap to an area beneath the second plate. | 06-19-2014 |
20140174362 | Apparatus And Methods For Symmetrical Gas Distribution With High Purge Efficiency - Provided are apparatus and methods for depositing materials by vapor deposition and plasma enhanced vapor deposition techniques, and more particularly a gas distribution assembly and vapor deposition chamber to deposit a material. The gas distribution assembly comprises a plurality of sections with each section containing a flow channel with passages extending from the flow channel to the processing region of a processing chamber. | 06-26-2014 |
20140193979 | DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION - Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to a plasma comprising ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products. | 07-10-2014 |
20140248772 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS - Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA). | 09-04-2014 |
20140252015 | High Temperature Process Chamber Lid - Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring. | 09-11-2014 |
20140283872 | PLASMA CLEANING APPARATUS AND METHOD - Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. Periodically, a PVD chamber may need to be cleaned to remove material that has built up in undesired locations within the chamber. Additionally, the sputtering target may need to be replaced. By removing the sputtering target and placing a grounded chamber lid in its place, the chamber may be plasma cleaned. The susceptor within the chamber may be electrically biased with an RF current. A stationary magnet assembly may be substantially centered behind the grounded lid to focus the cleaning plasma on the susceptor. Following the plasma cleaning, the magnet and lid may be removed and the sputtering target may be coupled to the chamber to continue processing. | 09-25-2014 |
20140342555 | DEPOSITION CHAMBERS WITH UV TREATMENT AND METHODS OF USE - Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas. | 11-20-2014 |
20140363979 | DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT - Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH | 12-11-2014 |
20150072508 | DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION - Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products. | 03-12-2015 |