Patent application number | Description | Published |
20080203332 | Fluorometer - A fluorometer comprising an excitation system including an excitation source for producing excitation light capable of causing fluorescence in fluorescent material; and a detection system for detecting said fluorescence. The excitation source comprises one or more light emitting diodes (LEDs) associated with means for causing said excitation light to form a beam that projects, during use, from the fluorometer. In one embodiment, the excitation system and the detection system are located in respective separate housings, the angular disposition between the housings being adjustable. In other embodiments, the excitation system and the detection system are located in the same housing. The fluorometer is particularly suited for use in detecting leaks in aqueous environments, especially when mounted on an underwater vehicle. | 08-28-2008 |
20090078028 | INTELLIGENT UNDERWATER LEAK DETECTION SYSTEM - A subsea leak detection system is disclosed which includes a plurality of subsea leak detection sensors and a leak detection controller adapted to receive leak detection data from the plurality of subsea leak detection sensors and direct the sensing activities of the plurality of subsea leak detection sensors based upon the received leak detection data. | 03-26-2009 |
20090277644 | METHOD AND APPARATUS FOR CHRISTMAS TREE CONDITION MONITORING - A method for monitoring a Christmas tree assembly installed on a subsea hydrocarbon well includes receiving a plurality of parameters associated with the Christmas tree assembly. A health metric for the Christmas tree assembly is determined based on the parameters. A problem condition with the Christmas tree assembly is identified based on the determined health metric. | 11-12-2009 |
20100051286 | OPTICAL SENSING SYSTEM FOR WELLHEAD EQUIPMENT - A system includes a Christmas tree assembly mounted to a hydrocarbon well, an optical feedthrough module, and a plurality of optical sensors. The optical feedthrough module is operable to communicate through a pressure boundary of the Christmas tree assembly. The plurality of optical sensors is disposed within the Christmas tree assembly for measuring parameters associated with the Christmas tree assembly and is operable to communicate through the optical feedthrough module. | 03-04-2010 |
20120098674 | WIRELESS SUBSEA MONITORING AND CONTROL SYSTEM - A subsea system for producing or processing a hydrocarbon production fluid comprises a plurality of sensors, each of which generates a sensor signal that is representative of a condition of a component of the system or a property of a fluid. A base unit mounted on or adjacent the system is in wireless communication with each of the sensors, and a subsea control module is in communication with the base unit. In operation, the sensor signals are transmitted wirelessly from the sensors to the base unit and are then transmitted from the base unit to the subsea control module. | 04-26-2012 |
20130088360 | SUBSEA OPTICAL SWITCH - An optical monitoring system includes a sensor network including a plurality of optical sensors. The optical switch module is disposed on a first side of a pressure barrier, coupled to the sensor network, and operable to select various subsets of the optical sensors responsive to a control signal. The sensor interrogation unit is disposed on a second side of the pressure barrier and operable to generate the control signal and receive an optical signal from a particular subset of the sensor elements selected by the optical switch module. The optical penetrator is coupled to the interrogation unit and the optical switch module and operable to communicate the optical signal through the pressure barrier. The inductive control unit is operable to inductively communicate the control signal and a power signal to the optical switch module through the pressure barrier. | 04-11-2013 |
20140265613 | Method for Modifying a Barrier in an Induction Power and/or Data Transfer System to Improve Power Transfer Efficiency - A method for increasing the power transfer efficiency of a wireless induction power and/or data transfer system comprising a magnetic field transmitter which is positioned on a first side of a barrier and a magnetic field receiver which is positioned on a second side of the barrier opposite the first side comprises the steps of disposing at least one flux flow member in or adjacent the barrier at least partially between the transmitter and the receiver. The flux flow member comprises a magnetic permeability different from the magnetic permeability of the barrier. As a result, the flux flow member increases the amount of magnetic flux generated by the transmitter which is coupled through the barrier and into the receiver. | 09-18-2014 |
Patent application number | Description | Published |
20090096461 | TEST STRUCTURE AND METHOD FOR RESISTIVE OPEN DETECTION USING VOLTAGE CONTRAST INSPECTION - A test structure for resistive open detection using voltage contrast (VC) inspection and method for using such structure are disclosed. The test structure may include a comparator within the IC chip for comparing a resistance value of a resistive element under test to a reference resistance and outputting a result of the comparing that indicates whether the resistive open exists in the resistive element under test, wherein the result is detectable by the voltage contrast inspection. | 04-16-2009 |
20110183486 | TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR - A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a monocrystalline semiconductor region and forming first spacers on exposed walls of the gate conductor. Using the gate conductor and the first spacers as a mask, at least extension regions are implanted in the semiconductor region and dummy spacers are formed extending outward from the first spacers. Using the dummy spacers as a mask, the semiconductor region is etched to form recesses having at least substantially straight walls extending downward from the major surface to a bottom surface, such that a substantial angle is defined between the bottom surface and the walls. Subsequently, the process is continued by epitaxially growing regions of stressed monocrystalline semiconductor material within the recesses. Then the dummy spacers are removed and the transistor can be completed by forming source/drain regions of the transistor that are at least partially disposed in the stressed semiconductor material regions. | 07-28-2011 |
20110316061 | STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI DEVICE - Semiconductor structures and methods to control bottom corner threshold in a silicon-on-insulator (SOI) device. A method includes doping a corner region of a semiconductor-on-insulator (SOI) island. The doping includes tailoring a localized doping of the corner region to reduce capacitive coupling of the SOI island with an adjacent structure. | 12-29-2011 |
20120086077 | FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE - An FET structure on a semiconductor substrate which includes forming recesses for a source and a drain of the gate structure on a semiconductor substrate, halo implanting regions through the bottom of the source and drain recesses, the halo implanted regions being underneath the gate stack, implanting junction butting at the bottom of the source and drain recesses, and filling the source and drain recesses with a doped epitaxial material. In exemplary embodiments, the semiconductor substrate is a semiconductor on insulator substrate including a semiconductor layer on a buried oxide layer. In exemplary embodiments, the junction butting and halo implanted regions are in contact with the buried oxide layer. In other exemplary embodiments, there is no junction butting. In exemplary embodiments, halo implants implanted to a lower part of the FET body underneath the gate structure provide higher doping level in lower part of the FET body to reduce body resistance, without interfering with FET threshold voltage. | 04-12-2012 |
20120187490 | FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE - A field effect transistor (FET) structure on a semiconductor substrate which includes a gate structure having a spacer on a semiconductor substrate; an extension implant underneath the gate structure; a recessed source and a recessed drain filled with a doped epitaxial material; halo implanted regions adjacent a bottom of the recessed source and drain and being underneath the gate stack. In an exemplary embodiment, there is implanted junction butting underneath the bottom of each of the recessed source and drain, the junction butting being separate and distinct from the halo implanted regions. In another exemplary embodiment, the doped epitaxial material is graded from a lower dopant concentration at a side of the recessed source and drain to a higher dopant concentration at a center of the recessed source and drain. In a further exemplary embodiment, the semiconductor substrate is a semiconductor on insulator substrate. | 07-26-2012 |