Mawatari, JP
Fuyumi Mawatari, Naka-Shi JP
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20130214216 | CONDUCTIVE REFLECTIVE FILM AND METHOD OF MANUFACTURING THE SAME - A conductive reflective film has a silver nanoparticle-sintered film with a surface coating composition containing a hydrolysate of a metal alkoxide wet-coated thereto. The coated film is then fired. Also provided is a method of manufacturing the conductive reflective film comprising the steps of coating a surface coating composition containing a hydrolysate of a metal alkoxide on a silver nanoparticle-sintered film using a wet coating method, and firing the silver nanoparticle-sintered film having the coated film. The conductive reflective film provides improved adhesion properties with respect to a base material while maintaining a high reflectivity and a high conductivity of a silver nanoparticle-sintered film. | 08-22-2013 |
Fuyumi Mawatari, Naka-Gun JP
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20130234191 | COMPOSITION FOR REFLECTION FILM FOR LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, AND METHOD OF PRODUCING LIGHT EMITTING ELEMENT - A light emitting element having a light emitting layer, an electro-conductive reflection film that reflects light emitted from the light emitting layer and a substrate in this order, wherein the electro-conductive reflection film contains metal nanoparticles. | 09-12-2013 |
Hiroshi Mawatari, Yokohama JP
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20110222351 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises memory cells which includes a selection transistor and a memory transistor; selection gate lines coupled to a gate of the selection transistor; control gate lines coupled to the control gate of the memory transistor; source lines coupled to a source of the memory transistor; bit lines coupled to the selection transistor; a selection gate line driver circuit; a control gate line driver circuit; and a source line driver circuit, wherein the selection gate line driver circuit comprises a first transistor including a first gate insulation film and drives the selection gate line with a first driving voltage, and the control gate line driver circuit and the source line driver circuit comprises a second transistor including second gate insulation films and drives the control gate line and the source line with a boost voltage higher than the first driving voltage. | 09-15-2011 |
Hiroshi Mawatari, Kawasaki JP
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20090219762 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises memory cells which includes a selection transistor and a memory transistor; selection gate lines coupled to a gate of the selection transistor; control gate lines coupled to the control gate of the memory transistor; source lines coupled to a source of the memory transistor; bit lines coupled to the selection transistor; a selection gate line driver circuit; a control gate line driver circuit; and a source line driver circuit, wherein the selection gate line driver circuit comprises a first transistor including a first gate insulation film and drives the selection gate line with a first driving voltage, and the control gate line driver circuit and the source line driver circuit comprise a second transistor including second gate insulation films and drive the control gate line and the source line with a boost voltage higher than the first driving voltage. | 09-03-2009 |
20110280072 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device including a memory cell array of memory cells arranged in a matrix, each of which includes a selecting transistor and a memory cell transistor; a column decoder controlling the potential of bit lines; a voltage application circuit controlling the potential of the first word lines; a first row decoder controlling the potential of the second word lines; and a second row decoder controlling the potential of the source line. The column decoder is formed of a circuit whose withstand voltage is lower than the voltage application circuit and the second row decoder. | 11-17-2011 |
20120195121 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device including a memory cell array of memory cells arranged in a matrix, each of which includes a selecting transistor and a memory cell transistor; a column decoder controlling the potential of bit lines; a voltage application circuit controlling the potential of the first word lines; a first row decoder controlling the potential of the second word lines; and a second row decoder controlling the potential of the source line. The column decoder is formed of a circuit whose withstand voltage is lower than the voltage application circuit and the second row decoder. | 08-02-2012 |
Hiroyasu Mawatari, Kanagawa-Ken JP
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20090022903 | METHOD FOR MANUFACTURING A PERIODICALLY-POLED STRUCTURE - The present invention provides a periodically-poled structure with high conversion efficiency and improved manufacturing yield. The method for manufacturing a periodically-poled structure in a second order nonlinear optical crystal having a single domain structure ( | 01-22-2009 |
20100053720 | LIGHT SOURCE APPARATUS WITH MODULATION FUNCTION AND ITS DRIVING METHOD - A light source apparatus with modulation function has a wavelength conversion module ( | 03-04-2010 |
Katsunori Mawatari, Fukuoka JP
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20080232261 | TRANSMISSION APPARATUS, TEST METHOD, AND TRANSMISSION APPARATUS CONTROL PROGRAM - A transmission apparatus transmits/receives test frames to test connectivity between the transmission apparatus and another transmission apparatus to/from the other transmission apparatus at regular intervals. The transmission apparatus includes a frame length changing unit that changes a frame length, which is capacity of each of the test frames, at every transmission when the test frames are transmitted to the other transmission apparatus at the regular intervals; a reception determining unit that determines whether the test frames having changed frame lengths transmitted from the other transmission apparatus at the regular intervals have been received at the regular intervals; and a frame length calculating unit that calculates the frame length of the test frame that has not been received if the reception determining unit determines that the test frame has not been received. | 09-25-2008 |
Kazuaki Mawatari, Hayam-Gun JP
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20140246481 | BONDING STRUCTURE MANUFACTURING METHOD, HEATING AND MELTING TREATMENT METHOD, AND SYSTEM THEREFOR - A soldering method capable of alleviating positional displacement between substrates even though a step of removing flux can be omitted is provided. | 09-04-2014 |
20150314385 | BONDING STRUCTURE MANUFACTURING METHOD, HEATING AND MELTING TREATMENT METHOD, AND SYSTEM THEREFOR - A soldering method capable of alleviating positional displacement between substrates even though a step of removing flux can be omitted is provided. | 11-05-2015 |
Kazuaki Mawatari, Hayami-Gun JP
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20130105558 | Bonding Structure Manufacturing Method, Heating And Melting Treatment Method, And System Therefor | 05-02-2013 |
Kazuaki Mawatari, Beppu-City Oita JP
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20130049189 | SEMICONDUCTOR FLIP-CHIP SYSTEM HAVING THREE-DIMENSIONAL SOLDER JOINTS - A solder joint between a trace ( | 02-28-2013 |
Kazuaki Mawatari, Beppu-City JP
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20110186990 | PROTRUDING TSV TIPS FOR ENHANCED HEAT DISSIPATION FOR IC DEVICES - An integrated circuit (IC) device includes a substrate having a top surface including substrate pads, and a through substrate via (TSV) die including a semiconductor substrate including a topside semiconductor surface having active circuitry and a bottomside surface. The topside semiconductor surface includes bonding connectors that are coupled to the substrate pads on the top surface of the substrate. A plurality of TSVs include an inner metal core that extends from the topside semiconductor surface to protruding TSV tips which extend out from the bottomside surface. At least one of the plurality of TSVs are dummy TSVs that have their protruding TSV tips exclusive of any electrically connection thereto that provide additional surface area that enhances heat dissipation from the bottomside of the TSV die. | 08-04-2011 |
20120193778 | INTEGRATED CIRCUIT HAVING PROTRUDING BONDING FEATURES WITH REINFORCING DIELECTRIC SUPPORTS - An integrated circuit (IC) die includes a substrate including a topside surface having active circuitry and a bottomside surface. A plurality of protruding bonding features are on the topside surface or bottomside surface and include at least one metal. The protruding bonding features including sidewalls having a neck region that includes an interface at or proximate to the topside surface or the bottomside surface. The protruding bonding features extend outward to a distal top edge. A dielectric support is positioned on the topside surface or bottomside surface between protruding bonding features. The dielectric support contacts and surrounds the sidewalls of the neck regions, does not extend beyond a height of the distal top edge, and is at least twenty percent taller where contacting the sidewalls as compared to a minimum non-zero height in a location between adjacent bonding features. | 08-02-2012 |
20130032270 | THERMAL COMPRESSION BONDING WITH SEPARATE BOND HEADS - A method of thermocompression (TC) bonding includes heating a semiconductor die and a substrate with at least one TC bondable material at an interface between the semiconductor die and the substrate with a bond head apparatus including a first portion and a second portion. The semiconductor die and TC bondable material or product therefrom are then cooled by removing the first portion from contacting the semiconductor die while maintaining the second portion of the bond head apparatus on the semiconductor die. | 02-07-2013 |
20130228916 | TWO-SOLDER METHOD FOR SELF-ALIGNING SOLDER BUMPS IN SEMICONDUCTOR ASSEMBLY - A semiconductor device ( | 09-05-2013 |
Kazuma Mawatari, Tokyo JP
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20150290641 | FUNCTIONAL DEVICE AND METHOD OF MANUFACTURING THE SAME - A functional device (and a functional device manufacturing method) includes a first substrate in which a groove is formed in one surface, a second substrate which is integrally disposed by bonding one surface of the second substrate to the one surface of the first substrate, and forms a flow path together with the groove of the first substrate, at least one modification object of a capture body which captures a target substance supplied into the flow path, an electrode which imparts an electrical or a chemical action to the target substance, and a catalyst, in which the modification object is disposed by being modified on a part of an inner surface of the flow path, a bonding portion between the one surface of the first substrate and the one surface of the second substrate is formed by bonding fluorine to silica. | 10-15-2015 |
Kazuma Mawatari, Kanagawa JP
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20100060981 | Circular Dichroic Thermal Lens Microscope - An objective of the present invention is to provide a circular dichroism thermal lens microscope apparatus capable of identifying and quantifying optically active samples in ultra-trace amounts, and which has a higher sensitivity than conventional apparatuses. | 03-11-2010 |
20100247429 | MICROCHIP, MICROCHIP DEVICE AND EVAPORATION METHOD USING MICROCHIP - Provided is a microchip capable of integrating liquid evaporation as an operation on the microchip. In the microchip | 09-30-2010 |
Kazuma Mawatari, Kawasaki-Shi JP
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20120164743 | MICROCHANNEL CHIP AND METHOD FOR GAS-LIQUID PHASE SEPARATION USING SAME - A microchannel chip having a microchannel formed in a substrate and a gas-liquid phase separation microchannel whose upper part is covered with a porous film, the gas-liquid phase separation microchannel being connected to the downstream end of the microchannel and having a depth of 10 μm to 100 μm. Also, a gas-liquid phase separation method which is a method for separating a liquid-phase flow from a two-phase flow flowing through a microchannel by removing a gas phase, the two-phase flow composed of the gas phase and the liquid phase, which liquid phase flows in the periphery of the above-described microchannel and which gas phase flows interiorly of the liquid-phase flow. | 06-28-2012 |
Kenji Mawatari, Chiyoda-Ku, Tokyo JP
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20160082723 | Inkjet Head, Method For Driving Same, And Inkjet Printer - A drive signal applied to a thin-film piezoelectric element includes the following: at least one discharge pulse that causes a drop of ink to be discharged from a pressure chamber; and a cancellation pulse. Said cancellation pulse has the same polarity as the discharge pulse(s) and serves to suppress reverberations of a pressure wave applied to the pressure chamber when the thin-film piezoelectric element is driven by the application of the discharge pulse(s). Letting Tc represent half of the natural vibration period of the pressure chamber, within the period within which a single pixel is placed, the cancellation pulse is applied once an amount of time equal to Tc times an even integer greater than or equal to 4 has passed since the end of the application of the first discharge pulse. | 03-24-2016 |
Kenji Mawatari, Ibaraki-Shi JP
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20130228454 | Ferroelectric Thin Film, Method for Producing Ferroelectric Thin Film, Method for Producing Piezoelectric Element - In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film. | 09-05-2013 |
Kenji Mawatari, Chiyoda-Ku JP
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20150077474 | Piezoelectric Thin Film, Piezoelectric Element, Ink-Jet Head, And Ink-Jet Printer - A piezoelectric thin film which is of a perovskite type having a tetragonal crystal structure, the tetragonal crystal having a degree of (100) orientation of 80% or higher. The piezoelectric thin film is constituted of a lead lanthanum zirconate titanate (PLZT) which is a lead zirconate titanate (PZT) in which some of the lead has been replaced with lanthanum. | 03-19-2015 |
Kenji Mawatari, Tokyo JP
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20150214465 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE, INK-JET HEAD, AND INK-JET PRINTER - A piezoelectric element having an electrode, a seed layer for controlling the crystal orientation of a piezoelectric layer, and the piezoelectric layer stacked in this order from the substrate side. The seed layer is composed of two or more layers stacked together each comprising crystals of spherical particles. | 07-30-2015 |
Kouzou Mawatari, Kanagawa JP
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20100078724 | TRANSISTOR-TYPE PROTECTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF THE SAME - A transistor-type protection device includes: a semiconductor substrate; a well including a first-conductivity-type semiconductor formed in the semiconductor substrate; a source region including a second-conductivity-type semiconductor formed in the well; a gate electrode formed above the well via a gate insulating film at one side of the source region; a drain region including the second-conductivity-type semiconductor formed within the well apart at one side of the gate electrode; and a resistive breakdown region including a second-conductivity-type semiconductor region in contact with the drain region at a predetermined distance apart from the well part immediately below the gate electrode, wherein a metallurgical junction form and a impurity concentration profile of the resistive breakdown region are determined so that a region not depleted at application of a drain bias when junction breakdown occurs in the drain region or the resistive breakdown region may remain in the resistive breakdown region. | 04-01-2010 |
20100133583 | Semiconductor integrated circuit - Disclosed herein is a semiconductor integrated circuit including a protected circuit; and a protection element formed on the same semiconductor substrate as the protected circuit and adapted to protect the protected circuit, wherein the protection element includes two diodes having their anodes connected together to form a floating node and two cathodes connected to the protected circuit, the two diodes are formed in a well-in-well structure on the semiconductor substrate, and the well-in-well structure includes a P-type well forming the floating gate, an N-type well which surrounds the surfaces of the P-type well other than that on the front side of the substrate with the deep portion side of the substrate so as to form the cathode of one of the diodes, and a first N-type region formed in the P-type well so as to form the cathode of the other diode. | 06-03-2010 |
20140332846 | TRANSISTOR-TYPE PROTECTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF THE SAME - A transistor-type protection device includes: a semiconductor substrate; a well including a first-conductivity-type semiconductor formed in the semiconductor substrate; a source region including a second-conductivity-type semiconductor formed in the well; a gate electrode formed above the well via a gate insulating film at one side of the source region; a drain region including the second-conductivity-type semiconductor formed within the well apart at one side of the gate electrode; and a resistive breakdown region including a second-conductivity-type semiconductor region in contact with the drain region at a predetermined distance apart from the well part immediately below the gate electrode, wherein a metallurgical junction form and a impurity concentration profile of the resistive breakdown region are determined so that a region not depleted at application of a drain bias when junction breakdown occurs in the drain region or the resistive breakdown region may remain in the resistive breakdown region. | 11-13-2014 |
Masaaki Mawatari, Tokyo JP
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20090171023 | THERMOPLASTIC POLYMER COMPOSITION AND MOLDED PRODUCT - The present invention provides a thermoplastic polymer composition capable of exhibiting excellent impact resistance, durability and destaticizing property. The present invention relates to a thermoplastic polymer composition comprising (A) 50 to 95% by mass of an aliphatic polyester-based resin and (B) 5 to 50% by mass of a block copolymer comprising (B) a hard segment block comprising at least one polymer selected from the group consisting of a polyamide, a polyester, a polyolefin and a polyurethane, and (B2) a soft segment block having an ether bond, with the proviso that a total amount of the components (A) and (B) is 100% by mass. In the preferred embodiment of the present invention, the thermoplastic polymer composition further comprises a specific amount of at least one polymer selected from the group consisting of (C1) a polyester-based resin, (C2) a polyamide-based resin, (C3) an acrylic resin, (C4) a polycarbonate-based resin, (C5) a polyacetal-based resin, (C6) a polyphenylene ether-based resin, (C7) a polyolefin-based resin and (C8) a styrene-based resin. | 07-02-2009 |
20100105836 | THERMOPLASTIC RESIN COMPOSITION AND RESIN MOLDED PRODUCT - The present invention provides a thermoplastic resin composition excellent in impact resistance, delamination resistance and surface appearance | 04-29-2010 |
20100152384 | THERMOPLASTIC RESIN COMPOSITION AND RESIN MOLDED PRODUCT - The object of the present invention is to provide a thermoplastic polymer composition which is excellent in the impact resistance, a fracture morphology and rigidity, as well as has a possibility of the effect for reducing environmental load. | 06-17-2010 |
20120065332 | THERMOPLASTIC POLYMER COMPOSITION AND MOLDED PRODUCT - A thermoplastic polymer composition capable of exhibiting excellent impact resistance, durability and destaticizing property containing (A) 50 to 95% by mass of an aliphatic polyester-based resin and (B) 5 to 50% by mass of a block copolymer of (B1) a hard segment block with at least one of a polyamide, polyester, polyolefin or polyurethane, and (B2) a soft segment block having an ether bond. | 03-15-2012 |
Masaaki Mawatari, Saga-Shi JP
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20130138223 | BIOIMPLANT - Provided is a bioimplant superior in antimicrobial action and safety in the body. The bioimplant according to the present invention comprises a base material of metal, ceramic, or plastic and a thermal spraying film of a calcium phosphate-based material formed at least partially thereon and the silver concentration in the thermal spraying film is 0.02 wt % to 3.00 wt %. | 05-30-2013 |
20150018965 | BIOIMPLANT - Provided is a bioimplant which is capable to inhibit the biofilm formation over a long period of time after an operation. The bioimplant of the present invention comprises a base material of metal, ceramic, or plastic and a thermal spraying film of a calcium phosphate-based material formed at least partially thereon and the silver concentration in the thermal-spray film is 0.05 wt % to 3.00 wt %. | 01-15-2015 |
Masayuki Mawatari, Takasago-Shi JP
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20100170260 | GAS TURBINE COMBUSTOR - A gas turbine combustor includes a fuel supplying section and a combustion tube. The fuel supplying section supplies fuel to a combustion zone inside the combustion tube. The combustion tube passes combustion gas to the turbine. The combustion tube is provided with a first region where an air passage for cooling air is formed and a second region where a steam passage for cooling steam is formed. The second region is located downstream of the first region in a direction of a mainstream flow of the combustion gas. | 07-08-2010 |
Michiaki Mawatari, Yamanashi JP
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20110184548 | ELECTRONIC COMPONENT MOUNTING MACHINE AND OPERATING INSTRUCTION METHOD FOR THE SAME - A challenge to be met by the invention is to provide an electronic component mounting machine that makes up an electronic component mounting line and that standardizes an operation input method, to thus enable lessening of work load on an operator during performance of operation input action, and an operation instruction method for use with the electronic component mounting machine. In electronic component mounting machines that make it possible for a single machine to perform a plurality of types of works by replacement of a work head to be built into a common platform according to a type of work, a production start button ( | 07-28-2011 |
20130086804 | COMPONENT-MOUNTING DEVICE, AND COMPONENT-MOUNTING METHOD - A tray feeder includes tray supply mechanisms and arranged in parallel. Each of the tray supply mechanisms has a function of retrieving a tray from a tray housing portion by a tray retrieving unit, and transferring the pallet up to a component pickup position set in the vicinity of a height at the upper end of the tray housing portion. A lock state of a door by a door lock mechanism is released only in a state where the tray retrieving unit is located at the component pickup position and blocks an interior of the tray feeder from a head transfer space in which the mounting head transfers. | 04-11-2013 |
20130160282 | ELECTRONIC PARTS MOUNTING APPARATUS AND ELECTRONIC PARTS MOUNTING METHOD - It is an objective to provide an electronic parts mounting apparatus and an electronic parts mounting method for making it possible to mount various types of electronic parts having equivalent electric characteristics on a single substrate. Before a mount head | 06-27-2013 |
20130167361 | ELECTRONIC COMPONENT MOUNTING DEVICE AND ELECTRONIC COMPONENT MOUNTING METHOD - When a connected position detecting unit detects that a connected position of a tape reaches a predetermined position in the tape passage, head-feeding of an electronic component provided in a head of the connected new tape is provided. In the head-feeding, a tape feeder feeds the tape such that the electronic component in the head of the new tape is located in a component pickup port. When the connected position detecting unit detects that the connected position of the tape reaches the predetermined position in the tape passage, a mounting head picks up the electronic component from the new tape fed by the head feeding control unit and is mounted on a new board positioned by a board conveying path. | 07-04-2013 |
20160081242 | COMPONENT MOUNTING APPARATUS AND COMPONENT MOUNTING METHOD - A component mounting apparatus includes transport mechanisms that transport boards, component supply sections, mounting heads, and a control unit that controls them based on mounting data. Each transport mechanism includes an upstream side operation area and a downstream side operation area. When the mounting data corresponds to an independent mounting mode in which each of the mounting heads is used to mount a component only onto a board on a corresponding mechanism, the control unit performs a control so that the upstream side operation area is used as a mounting area. When the mounting data corresponds to an alternating mounting mode in which both mounting heads are used to mount the components sequentially onto a board that is first carried into the downstream side operation area, the control unit performs a control so that the upstream side operation area is used as a standby area. | 03-17-2016 |
Rina Mawatari, Sagamihara JP
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20110031435 | (METH)ACRYLIC PRESSURE-SENSITIVE ADHESIVE FOAM AND METHOD FOR PRODUCING THE SAME - A (meth)acrylic pressure-sensitive adhesive foam reduced in the amount of a foaming adjuvant compared with the conventional foam and having a high air bubble content, and a method for producing the same are provided. The foam includes a partial polymer having (a) one or more alkyl (meth)acrylate monomers having one reactive unsaturated group, the alkyl group having 12 or less carbon atoms, (b) a monomer for crosslinking, which is copolymerizable with the component (a), and (c) a copolymer of the component (a) and the component (b); a thermally conductive filler; and a foaming adjuvant containing surface modified nanoparticles having a particle diameter of 20 nm or less, wherein a crosslinked structure containing the component (c) is formed in the curable composition. | 02-10-2011 |
Rina Mawatari, Kanagawa-Ken JP
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20080214079 | Double-Coated Pressure-Sensitive Adhesive Tape - A double-coated pressure-sensitive adhesive tape comprising a core material composed of a nonwoven fabric with a thickness of no greater than 20 μm, and a pressure-sensitive adhesive layer comprising an acrylic-based polymer with a glass transition temperature (Tg) of between −20° C. and 20° C. and with a weight-average molecular weight of 1 million or greater, on both sides of the core material, the double-coated pressure-sensitive adhesive tape having a total thickness of no greater than 60 μm. | 09-04-2008 |
20110045638 | HEAT RESISTANT MASKING TAPE AND USAGE THEREOF - The present invention provides a masking tape which can be easily released without leaving an adhesive residue. A heat resistant masking tape, comprising (1) a heat resistant backing film layer, and (2) a pressure-sensitive adhesive layer disposed on the heat resistant backing film layer, wherein the adhesive layer comprises a polymer having a solubility parameter (SP) value at 25° C. of 20 MPa | 02-24-2011 |
Shiro Mawatari, Fukuoka JP
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20100029966 | PROCESS FOR PRODUCING SPHINGOMYELIN AND PLASMALOGEN-FORM GLYCEROPHOSPHOLIPID - Disclosed is a process for producing sphingomyelin and plasmalogen-form glycerophospholipid, which comprises the step (A) of extracting a total lipids from a chicken skin powder and drying the extract, the step (B) of subjecting the dried total lipids obtained in said step (A), to extraction treatment with a solvent mixture of an aliphatic hydrocarbon solvent and a water-soluble ketone solvent to separate an insoluble portion composed mainly of sphingomyelin and a soluble portion, the step (C) subjecting the insoluble portion composed mainly of sphingomyelin, obtained in said step (B), to extraction treatment with a solvent mixture of water and a water-soluble ketone solvent to remove a non-lipid component contained in the soluble portion, and the step (D) of drying the soluble portion obtained in said step (B), and subjecting the thus-obtained dried product to extraction treatment with a water-soluble ketone solvent to separate and recover an insoluble portion composed mainly of plasmalogen-form giycerophospholiuld. | 02-04-2010 |
Shirou Mawatari, Kasuya-Gun JP
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20120283223 | CEREBRAL NERVE CELL NEOGENESIS AGENT - An objective of the present invention is to provide a new substance having a cerebral nerve cell neogenesis effect. Another objective is to provide a cerebral nerve cell neogenesis agent that is effective in treating and/or preventing neurological disorders utilizing the substance. With the present invention, a cerebral nerve cell neogenesis agent containing a plasmalogen as an active ingredient is provided. In particular, a preferable cerebral nerve cell neogenesis agent contains, as an active ingredient, a biological tissue (preferably, an avian tissue) extracted plasmalogen mainly including an ethanolamine plasmalogen and a choline plasmalogen. | 11-08-2012 |
20130172293 | DRUG AGAINST CENTRAL NERVOUS SYSTEM INFLAMMATION - An objective of the present invention is to provide a novel method with an effect of alleviating central nervous system inflammation. The present invention provides a drug against central nervous system inflammation containing a plasmalogen. More preferably, the present invention provides a drug against central nervous system inflammation containing a plasmalogen extracted from a biological tissue (preferably an avian tissue) that mainly contains an ethanolamine plasmalogen and a choline plasmalogen. | 07-04-2013 |
Siro Mawatari, Fukuoka JP
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20110160471 | METHOD FOR PRODUCTION OF HIGHLY PURE PHOSPHOLIPID, AND HIGHLY PURE SPHINGOMYELIN AND PLASMALOGEN-TYPE GLYCEROPHOSPHOLIPID PRODUCED BY THE METHOD - This invention provides a process for producing a high-purity sphingomyelin and a high-purity plasmalogen-form glycerophospholipid from a biological material by simple procedures at high yields. The process comprises the steps of: (A) subjecting dried total lipids extracted from a biological material to extraction treatment with a specific mixture solution to separate an insoluble portion composed mainly of sphingomyelin and a soluble portion; (B) subjecting the insoluble portion, obtained in said Step (A), to washing treatment with a specific mixture solution to obtain crude sphingomyelin; (C) subjecting the soluble portion, obtained in said Step (A), to washing treatment with a water-soluble ketone solvent to obtain crude plasmalogen-form glycerophospholipid; (D) causing an enzyme to act on the crude sphingomyelin, obtained in said Step (B), to obtain sphingomyelin having a purity of 90% or more; and (E) causing an enzyme to act on the crude plasmalogen-form glycerophospholipid, obtained in said Step (C), to obtain plasmalogen-form glycerophospholipid having a purity of 40% or more. | 06-30-2011 |
Toyoki Mawatari, Amagasaki-Shi JP
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20100029969 | COPPER COMPOUND AND METHOD FOR PRODUCING COPPER THIN FILM USING THE SAME - The present invention provides a copper compound having a decomposition temperature in a range of 100° C. to 300° C. and including one unit or a plurality of connected units represented by the following Formula (1): | 02-04-2010 |
Yasuteru Mawatari, Muroran-Shi JP
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20120172570 | AROMATIC POLYESTER - The present invention provides an aromatic polyester which is substantially free from the occurrence of coloration and retains significantly high transparency even after being thermally processed at high temperature and which has high flowability. The aromatic polyester contains a polyhydric phenol residue and a residue of any one of aromatic polycarboxylic acid, halide thereof, and anhydride thereof, and terminals of the aromatic polyester have a structure represented by the formula —C(O)—R. The aromatic polyester has an end-capping rate of 90% or higher and a weight average molecular weight (Mw) ranging from 3,000 to 1,000,000. | 07-05-2012 |
Yoshio Mawatari, Yamaguchi JP
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20150187454 | ELECTROCONDUCTIVE PARTICLES - An electroconductive particle is composed of a core particle and tin oxide containing at least one element whose valence is equal to or smaller than four and located on the surface of the core particle. The tin oxide containing at least one element whose valence is equal to or smaller than four has a crystallite size of 5 to 20 nm. The element whose valence is equal to or smaller than four is preferably an element of the group 1 of the Periodic Table, an element of the group 2 of the Periodic Table, an element of the group 4 of the Periodic Table, an element of the group 12 of the Periodic Table, or an element of the group 13 of the Periodic Table. The content of the element whose valence is equal to or smaller than four is preferably 0.045 mol % to 20 mol % relative to tin. | 07-02-2015 |