Patent application number | Description | Published |
20080280030 | SOLAR CELL ABSORBER LAYER FORMED FROM METAL ION PRECURSORS - Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one polar solvent, at least one binder, and at least one Group IB and/or IIIA hydroxide. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. | 11-13-2008 |
20090107550 | HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE NANOFLAKE PARTICLES - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase. | 04-30-2009 |
20090246906 | High-Throughput Printing of Semiconductor Precursor Layer From Microflake Particles - Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices. | 10-01-2009 |
20100003781 | ROLL-TO-ROLL NON-VACUUM DEPOSITION OF TRANSPARENT CONDUCTIVE ELECTRODES - Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer. | 01-07-2010 |
20100089453 | High-Throughput Printing of Semiconductor Precursor Layer From Microflake Particles - Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices. | 04-15-2010 |
20100096015 | Metallic Dispersion - A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device. | 04-22-2010 |
20100248419 | SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) - Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one equilibrium and/or near equilibrium material. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. | 09-30-2010 |
20100267222 | High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. | 10-21-2010 |
20100291758 | Thin-Film Devices Formed From Solid Particles - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form. | 11-18-2010 |
20110139251 | BANDGAP GRADING IN THIN-FILM DEVICES VIA SOLID GROUP IIIA PARTICLES - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first. | 06-16-2011 |
20120171847 | THIN-FILM DEVICES FORMED FROM SOLID PARTICLES - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. | 07-05-2012 |
20130210191 | High-Throughput Printing of Semiconductor Precursor Layer by Use of Chalcogen-Rich Chalcogenides - A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film. | 08-15-2013 |
20140106500 | ROLL-TO-ROLL NON-VACUUM DEPOSITION OF TRANSPARENT CONDUCTIVE ELECTRODES - Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer. | 04-17-2014 |