Patent application number | Description | Published |
20100233598 | PATTERN CORRECTING APPARATUS, MASK-PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A mask-pattern correcting apparatus according to an embodiment of the present invention includes: a pattern-shape variable mask, transmittance or reflectance of which can be changed; a light-receiving element unit that detects an optical image of a mask pattern formed by light irradiated on the pattern-shape variable mask; and a control unit that controls the pattern-shape variable mask to form a mask pattern according to a shape of a design layout and determines a correction amount of the mask pattern such that a difference between an optical image obtained by the light-receiving element unit and the design layout is within a predetermined range. | 09-16-2010 |
20110201138 | MASK VERIFYING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT - According to a mask verifying method of the embodiment, a difference between an actual dimension of a mask pattern and a simulation dimension is calculated as a computational estimated value. Moreover, a difference between an actual dimension of the mask pattern that is actually measured and a dimension on pattern data is calculated as an actually-measured difference. Then, it is verified whether a mask pattern dimension passes or fails based on the calculated value. When calculating the computational estimated value, a model function, which is set based on each correspondence relationship between an actual dimension and a mask simulation dimension of a test pattern, which includes a plurality of types of pattern ambient environments, to the mask pattern. | 08-18-2011 |
20120076424 | PATTERN SHAPE DETERMINING METHOD, PATTERN SHAPE VERIFYING METHOD, AND PATTERN CORRECTING METHOD - According to the pattern shape determining method of the embodiment, a first reference position of a pattern shape is set on a first pattern and a second reference position of a pattern shape is set on a second pattern. Moreover, an allowable dimensional difference between the first pattern and the second pattern is set to a value corresponding to a distance from the first reference position. Then, it is determined whether the second pattern has a pattern shape identical with the first pattern, based on whether a dimensional difference between the first pattern and the second pattern is within a range of an allowable dimensional difference set at a position at which the dimensional difference is calculated. | 03-29-2012 |
20120244717 | RESIN REMOVAL METHOD, RESIN REMOVAL APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a resin removal method is provided. In the resin removal method, near-field light is generated in a local area of a pattern concave-convex portion on a pattern master used for imprinting by irradiating the pattern master with ultraviolet light in an ashing gas atmosphere which removes resin attached to the pattern master. Then, the resin is removed from the pattern master by using the ashing gas and the near-field light. | 09-27-2012 |
20120324407 | SIMULATION MODEL CREATING METHOD, COMPUTER PROGRAM PRODUCT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - According to a simulation model creating method of an embodiment, a resist pattern is formed by transferring a mask pattern on a first substrate with an exposing amount and a focus value being changed, and a line width of the resist pattern is measured. Next, measurement results which are not within an allowable change range due to an irregularity of the exposing amount, an irregularity of the focus value or pattern feature amount are removed. In addition, measurement results which are not with in an allowable change range due to an irregularity of the line width of the mask pattern are removed. Next, a simulation model is created by using measurement results which are not removed. | 12-20-2012 |
20140059502 | PATTERN DATA GENERATION METHOD, PATTERN VERIFICATION METHOD, AND OPTICAL IMAGE CALCULATION METHOD - According to an embodiment, a pattern data generation method is provided. In the pattern data generation method, when a resist on a substrate is exposed using a mask, an optical image at a designated resist film thickness position is calculated using a mask pattern. Feature quantity related to a shape of a resist pattern at the resist film thickness position is extracted, based on the optical image. Also, whether the resist pattern is failed is determined, based on the feature quantity, and pattern data of a mask pattern determined as failed is corrected. | 02-27-2014 |