Patent application number | Description | Published |
20090045394 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE THEREOF - A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organised islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands. | 02-19-2009 |
20090256165 | METHOD OF GROWING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING MOLECULAR BEAM EPITAXY - A method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region is provided. The method includes growing the active region using a combination of (i) plasma-assisted molecular beam epitaxy; and (ii) molecular beam epitaxy with a gas including nitrogen-containing molecules in which the nitrogen-containing molecules dissociate at a surface of the substrate at a temperature which the active region is grown. | 10-15-2009 |
20090321781 | QUANTUM DOT DEVICE AND METHOD OF MAKING THE SAME - A semiconductor device includes an Al | 12-31-2009 |
20100065811 | SINGLE PHOTON SOURCE WITH AllnN CURRENT INJECTION LAYER - A photon source includes a substrate, an active region formed above the substrate, and a pair of electrodes configured to provide an injection current which passes through the active region. The active region includes a quantum dot layer including one or more Al | 03-18-2010 |
20110079767 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device comprises: a layer structure including an active region ( | 04-07-2011 |
20120068196 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND A METHOD OF MANUFACTURE THEREOF - A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from an upper surface of the layer structure through at least the second layer and the active region. Removing material where a threading dislocation is present provides effective suppression of the tendency of the threading dislocations to act as non-radiative centres, thereby improving the light output efficiency of the device. The device may be manufactured by a first step of selectively etching the layer structure at the locations of one or more threading dislocation to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of each pilot cavity. | 03-22-2012 |
20130292637 | MULTI-QUANTUM WELL LED STRUCTURE WITH VARIED BARRIER LAYER COMPOSITION - A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminium, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly. | 11-07-2013 |