Masayuki Kitamura
Masayuki Kitamura, Komatsu-Shi JP
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20090242548 | TAPE HEATER AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a tape heater including: at least one flexible fabric base formed from a heat-resistant thread, the at least one flexible fabric base including a first fabric base part and a second fabric base part; and a heater member, in which the heater member is interposed between the first fabric base part and the second fabric base pan. Since the heater member is interposed between the fabric base(s), the tape heater of the present invention exhibits superior flexibility and stretchability and is superior in easily being wrapped around a pipe, as well as reliably protecting the heater member. Further, tape heaters can be continually manufactured, so long as weaving or knitting of the fabric base(s) is caused to proceed while the heater member is interposed between the fabric base(s), to thus join the fabric base(s). Hence, enhancement of production efficiency and prevention of an increase in production cost can be attained. | 10-01-2009 |
Masayuki Kitamura, Mie JP
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20120111103 | DETECTING APPARATUS - The objective of the present invention is to provide an unexpected detecting apparatus enabled to evaluate an evenness of a compound coated on an electrode of a battery. The detecting apparatus ( | 05-10-2012 |
Masayuki Kitamura, Odawara JP
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20120191671 | COMPUTER SYSTEM AND DATA DE-DUPLICATION METHOD - A computer system and data de-duplication method capable of performing efficient data de-duplication are suggested. | 07-26-2012 |
Masayuki Kitamura, Mie-Ken JP
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20140284801 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor device, includes a substrate, an inter-layer insulating layer provided above the substrate, a first interconnect provided in a first trench, and a second interconnect provided in a second trench. The first interconnect is made of a first metal, and the first trench is provided in the inter-layer insulating layer on a side opposite to the substrate. The second interconnect is made of a second metal, and the second trench is provided in the inter-layer insulating layer toward the substrate. A width of the second trench is wider than a width of the first trench. A mean free path of electrons in the first metal is shorter than a mean free path of electrons in the second metal, and the first metal is a metal, an alloy or a metal compound, including at least one nonmagnetic element as a constituent element. | 09-25-2014 |
Masayuki Kitamura, Yokkaichi-Shi JP
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20140284802 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a metal interconnect and a graphene interconnect which are stacked to one another. | 09-25-2014 |
20150262940 | Semiconductor Device and Method of Manufacturing the Same - According to one embodiment, a semiconductor device includes a graphene interconnect, an insulation film formed on the graphene interconnect, and a via conducting portion formed in a via hole provided in the graphene interconnect and the insulation film. | 09-17-2015 |
Masayuki Kitamura, Yokkaichi Mie JP
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20160056256 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device is disclosed. The device includes a foundation layer including first and second layers being different from each other in material, and the foundation layer including a surface on which a boundary of the first and second layers is presented, a catalyst layer on the surface of the foundation layer, and the catalyst layer including a protruding area. The device further includes a graphene layer being in contact with the protruding area. | 02-25-2016 |
20160071803 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device is disclosed. The device includes a first interconnect, and an insulating film provided on the first interconnect, and being with a through hole communicating with the first interconnect. A catalyst layer is provided on the first interconnect of a bottom portion of the through hole. The catalyst layer has a form of a continuous film, and includes catalyst material and impurity. A first plug is provided in the through hole and is in contact with the catalyst layer, and includes a carbon nanotube layer. A second interconnect is disposed above the first interconnect and connected to the first interconnect via the first plug. | 03-10-2016 |
20160079176 | SEMICONDUCTOR DEVICE - According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a first film having a first melting point, forming a pattern of a second film on an upper surface of the first film, the second film having a second melting point lower than the first melting point, and forming a graphene film on the upper surface of the first film, the graphene film being formed from a side surface of the pattern of the second film. | 03-17-2016 |
Masayuki Kitamura, Yokkaichi JP
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20160064405 | METHOD FOR FORMING INSULATOR FILM ON METAL FILM - According to one embodiment, forming a metal film on an underlying layer, and depositing an oxide film on the metal film using plasma of a mixed gas induced above the metal film. The mixed gas includes a gaseous material source, a gaseous oxidant, and a gaseous reductant. | 03-03-2016 |
20160093538 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first metal containing a first conductivity-type impurity above a substrate provided with a first conductivity-type impurity region containing a first conductivity-type impurity and a second conductivity-type impurity region containing a second conductivity-type impurity; and forming a metal silicide containing the first metal by selectively causing, by thermal treatment, a reaction between the first metal and silicon contained in the substrate in the first conductivity-type impurity region. | 03-31-2016 |
20160093542 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - A method of manufacturing a semiconductor device includes forming a film along a surface of a semiconductor substrate in a first state having a first surface area by supplying a reaction gas at a first flow rate. The method further includes detecting a transition from the first state to a second state having a second surface area different from the first surface area. The method still further includes forming a film by changing the flow rate of the reaction gas from the first flow rate to a second flow rate different form the first flow rate after detecting the transition from the first state to the second state. | 03-31-2016 |
Masayuki Kitamura, Nirasaki City JP
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20160126106 | SELECTIVE GROWTH METHOD AND SUBSTRATE PROCESSING APPARATUS - There is provided a selective growth method of selectively growing a thin film on exposed surfaces of an underlying insulation film and an underlying metal film, which includes: selectively growing a film whose thickness is decreased by combustion on the underlying metal film using metal of the underlying metal film as a catalyst; and selectively growing a silicon oxide film on the underlying insulation film while combusting the film whose thickness is decreased by combustion. | 05-05-2016 |