Patent application number | Description | Published |
20080299415 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 12-04-2008 |
20090064861 | Hydrogen Separation Membrane, Sputtering Target for forming said Hydrogen Separation Membrane, and Manufacturing Method Thereof - Provided is a hydrogen separation membrane characterized by comprising a structure obtained by sintering atomized powder having a composition of Ni | 03-12-2009 |
20090085014 | Zinc Oxide-Based Transparent Conductor and Sputtering Target for forming the Transparent Conductor - Proposed is a zinc oxide-based transparent conductor characterized in having zinc oxide as its primary component, containing an element at 1 to 10 atomic % which has a smaller ion radius than zinc in the zinc oxide and serves as an n-type dopant for the zinc oxide, and containing nitrogen in which the atomicity ratio of nitrogen in relation to the n-type dopant (nitrogen/n-type dopant) is 0.3 to 0.6. In the development of a transparent conductor that does not contain In, which is an expensive raw material with concern of resource depletion, the limit of the conventional development technique known as the single-dopant method is exceeded, a guide to dopant selection as a specific means for realizing the co-doping theory is indicated, and a transparent conductor having low resistivity is provided. | 04-02-2009 |
20090139858 | Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof - A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 μm or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane. | 06-04-2009 |
20090139859 | Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder - Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks. | 06-04-2009 |
20090200525 | Zinc Oxide Based Transparent Electric Conductor, Sputtering Target for Forming of the Conductor and Process for Producing the Target - Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range. | 08-13-2009 |
20090301872 | Sb-Te Base Alloy Sinter Sputtering Target - Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process. | 12-10-2009 |
20100140570 | Sintered Compact of Composite Oxide, Amorphous Film of Composite Oxide, Process for Producing said Film, Crystalline Film of Composite Oxide and Process for Producing said Film - Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film. | 06-10-2010 |
20100167000 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 07-01-2010 |
20100189636 | Amorphous Film of Composite Oxide, Crystalline Film of Composite Oxide, Method of Producing said Films and Sintered Compact of Composite Oxide - Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of | 07-29-2010 |
20100240521 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 09-23-2010 |
20100276276 | Thin Film Mainly Comprising Titanium Oxide, Sintered Sputtering Target Suitable for Producing Thin Film Mainly Comprising Titanium Oxide, and Method of Producing Thin Film Mainly Comprising Titanium Oxide - Provided is a thin film mainly comprising titanium oxide, wherein the thin film comprises components of Ti, Ag and O and contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and O/(2Ti+0.5Ag) as a ratio of oxygen to metals is 0.97 or more. This invention aims to provide a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide. This invention also aims to provide a thin film that has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. It is also possible to apply this film to a glass substrate; that is, which can be used as a heat reflective film, an antireflective film, and an interference filter. | 11-04-2010 |
20100320085 | Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof - A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 μm or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane. | 12-23-2010 |
20110017590 | Sintered Compact Target and Method of Producing Sintered Compact - Disclosed is a sintered compact target containing an element (A) and an element (B) below, wherein the sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm | 01-27-2011 |
20110163277 | OXIDE SINTERED COMPACT FOR PREPARING TRANSPARENT CONDUCTIVE FILM - The present invention provides an ITO amorphous transparent conductive film used in a display electrode for a flat panel display or the like, which can be produced without heating a substrate and without feeding water during the sputtering, while achieving both high etchability and lower resistivity at high levels. An oxide sintered compact containing indium oxide as a main component, while containing one or more elements selected from nickel, manganese, aluminum and germanium as a first additive element, with the total content of the first additive element being 2-12 atom % relative to the total content of indium and the first additive element. | 07-07-2011 |
20110163279 | OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM - The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element. | 07-07-2011 |
20110278511 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputternig Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component, wherein the thin film includes titanium, oxygen and copper, content of Ti is 29.0 at % or higher and 34.0 at % or less and content of Cu is 0.003 at % or higher and 7.7 at % or less with remainder being oxygen and unavoidable impurities, and ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. This invention aims to obtain a thin film comprising titanium oxide as its main component with a high refractive index and low extinction coefficient and a sintered compact sputtering target comprising titanium oxide as its main component which is suitable for producing the foregoing thin film, to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 11-17-2011 |
20120024192 | Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing the Thin Film - Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter. | 02-02-2012 |
20120103804 | Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact - An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering. | 05-03-2012 |
20120192763 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 08-02-2012 |
20120196076 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2 Ti+0.5 Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 08-02-2012 |
20120319057 | Sintered Compact, Amorphous Film and Crystalline Film of Composite Oxide, and Process for Producing the Films - An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided. | 12-20-2012 |
20140023868 | Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing The Thin Film - A sputtering target of sintered Ti—Nb based oxide is provided. The sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference or protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting or antireflection film, or an interference filter. | 01-23-2014 |