Patent application number | Description | Published |
20090050961 | Semiconductor Device - A semiconductor device is disclosed which has a shorter turn-on time. The semiconductor device includes an epitaxial layer, two base regions embedded in a surface portion of the epitaxial layer, source regions respectively embedded in the base regions, a drain region including at least a portion of the epitaxial layer excluding the base regions, and a gate electrode provided on the epitaxial layer with the intervention of an insulation film with ends thereof respectively opposed to surfaces of the two base regions. The drain region is arranged so that depletion layers respectively extending from boundaries between the drain region and the two base regions are connected to each other in an OFF state in a portion of the drain region located between the two base regions. | 02-26-2009 |
20090302379 | Semiconductor Device - A trench semiconductor device is provided which ensures a reduced turn-on time. The semiconductor device ( | 12-10-2009 |
20100072546 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which on-resistance is largely reduced. The semiconductor device includes an n type epitaxial layer ( | 03-25-2010 |
20100090258 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which can reduce on-resistance by improving hole mobility of a channel region. A trench gate type MOSFET (semiconductor device) is provided with a p | 04-15-2010 |
20100176443 | Semiconductor Device - Provided is a semiconductor device in which on-resistance is largely reduced. In a region ( | 07-15-2010 |
20100176447 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which on-resistance is largely reduced. The semiconductor device includes an n type epitaxial layer ( | 07-15-2010 |
20100181606 | Semiconductor Device - Provided is a semiconductor device having a high switching speed. A semiconductor device ( | 07-22-2010 |
20100193837 | Semiconductor Device - Provided is a semiconductor device in which on-resistance is largely reduced based on a new principle of operation. In the semiconductor device ( | 08-05-2010 |
20120267710 | Semiconductor Device - Provided is a semiconductor device in which on-resistance is largely reduced. In a region ( | 10-25-2012 |
20130009240 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a drain region of a first conductivity type formed on a semiconductor substrate; an element forming region that is provided on the drain region and that has a concave portion reaching the drain region; a gate electrode disposed in the concave portion; a superjunction structure portion that is disposed in the element forming region and that is formed by alternately arranging a drift layer of the first conductivity type penetrated by the concave portion and a resurf layer of a second conductivity type being in contact with the drift layer on the semiconductor substrate; and a base region of the second conductivity type that is disposed on the superjunction structure portion so as to be in contact with the drift layer in the element forming region, that is penetrated by the concave portion, and that faces the gate electrode with the gate insulating film therebetween. | 01-10-2013 |
20140231906 | Semiconductor Device - Provided is a semiconductor device in which on-resistance is largely reduced. In a region ( | 08-21-2014 |