Patent application number | Description | Published |
20080250619 | Vertical type semiconductor device producing apparatus - A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped. | 10-16-2008 |
20080251014 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20080251015 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20090176017 | SUBSTRATE PROCESSING APPARATUS - A substrate processing device comprises a reaction vessel | 07-09-2009 |
20090178694 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 07-16-2009 |
20110025320 | MAGNETIC SENSOR - A magnetoresistive element includes magnetoresistive films each having an upper surface and a lower surface, and conductors combining the magnetoresistive films in series and including top electrodes and bottom electrodes. Each one of the top electrodes and corresponding one of the bottom electrodes oppose each other to sandwich corresponding one of the magnetoresistive films. Each electrode of the top electrodes and the bottom electrodes includes a stem section and a branch section, the stem section extending in a direction along a series alignment direction of the magnetoresistive films, and the branch section extending along the lamination plane in a direction intersecting a direction in which the stem section extends. The branch section in the top electrode is in contact with an upper surface of the corresponding magnetoresistive film, and the branch section in the bottom electrode is in contact with a lower surface of the corresponding magnetoresistive film. | 02-03-2011 |
20110068786 | MAGNETIC SENSOR AND MANUFACTURING METHOD THEREOF - A magnetic sensor includes: a first and a second magnetoresistive elements each including: a magnetization free layer; a nonmagnetic spacing layer; a magnetization pinned layer having one or more first layers of a first group of ferromagnetic layers and one or more second layers of a second group of ferromagnetic layers, in which the first layer and the second layer are stacked alternately with a nonmagnetic coupling layer in between, and so antiferromagnetically coupled to each other as to have opposite magnetizations to each other; and an antiferromagnetic layer pinning magnetization orientation in the one or more first and the second layers. The first layers in the first magnetoresistive element are one more in number than that of the one or more second layers. The number of the one or more first layers and that of the one or more second layers in the second magnetoresistive element are equal. | 03-24-2011 |
20110130001 | Substrate Processing Apparatus - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 06-02-2011 |
20110176967 | VERTICAL TYPE SEMICONDUCTOR DEVICE PRODUCING APPARATUS - A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas. | 07-21-2011 |
20110221433 | MAGNETIC SENSOR - A magnetic sensor includes a spin valve-type magneto-resistive element, a voltage detection part, a coil, and a current control part, the coil being configured to apply a measuring magnetic field to the spin valve-type magneto-resistive element upon application of a current, the voltage detection part being configured to output a detection signal to the current control part upon detecting an output voltage of the spin valve-type magneto-resistive element reaching a predetermined voltage value, the current control part being configured to control the current to unidirectionally increase or unidirectionally decrease a strength of the measuring magnetic field from an initial value, but upon input of the detection signal, control the current to return the strength of the measuring magnetic field to the initial value, the initial value being a magnetic field strength where the spin valve-type magneto-resistive element reaches saturation magnetization. | 09-15-2011 |
20120240348 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 09-27-2012 |
20130022860 | LEAD ACID STORAGE BATTERY - A flooded-type lead acid storage battery in which charging is intermittently carried out in a short period of time and high-efficiency discharge to a load is carried out in a partial state of charge, wherein the charge acceptance and service life characteristics are improved by using a positive plate in which the specific surface area of the active material is set to 6 m | 01-24-2013 |
20130029210 | LEAD ACID STORAGE BATTERY - In a liquid-type lead acid storage battery in which charging is performed for a short time intermittently and high-rate discharging to load is performed in a partially charged state, there are used a positive electrode plate in which the utilization rate of a positive electrode activation substance is set to a range of 50% to 65%, and a negative electrode plate in which a carbonaceous electroconductive material and a bisphenol/aminobenzenesulfonic acid/formaldehyde condensate are added to the negative electrode activation substance, thereby improving the charge acceptance and the lifespan performance; and a separator whose surface disposed opposite the negative electrode plate is formed from a nonwoven fabric made of a material selected from glass, pulp, and polyolefin, is used as a separator; whereby the charge acceptance and the lifespan performance under PSOC are improved. | 01-31-2013 |
20130133696 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 05-30-2013 |
20130157118 | LEAD-ACID BATTERY - In a valve-regulated lead-acid battery in which charging is performed intermittently on every short time and high rate discharging to a load is performed in a partial state of charge (PSOC), a valve-regulated lead-acid battery improved for the charge acceptance and the life characteristic under PSOC than usual is provided. A positive electrode plate having a specific surface area of an active material of 5.5 m | 06-20-2013 |
20150050540 | LEAD ACID BATTERY - On each negative plate ( | 02-19-2015 |