Patent application number | Description | Published |
20090104760 | VERTICAL CVD APPPARATUS FOR FORMING SILICON-GERMANIUM FILM - A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights. | 04-23-2009 |
20110057114 | Electron beam lithography apparatus and electron beam lithography method - An electron beam lithography apparatus includes an electron gun emitting an electron beam, a deflector deflecting the electron beam, a focus corrector correcting a focus of the electron beam, a storage unit storing exposure data, and a controller correcting the exposure data based on a constant correction coefficient independent of time passage and a fluctuating correction coefficient changing with time, calculates a deflection efficiency indicating a relation between an input signal to the deflector and an amount of beam deflection, and a correction intensity indicating a relation between an input signal to the focus corrector and a beam focus, and writes the electron beam on a sample according to the deflection efficiency and the correction intensity. | 03-10-2011 |
20120256106 | ELECTRON BEAM EXPOSURE APPARATUS AND ELECTRON BEAM EXPOSURE METHOD - In a multi-column electron beam exposure apparatus for performing exposure treatment in parallel by arranging a plurality of column cells on a wafer, a relationship between exposure intensity and a line width for each column cell is obtained (Steps S | 10-11-2012 |
20140061465 | ELECTRON BEAM DETECTOR, ELECTRON BEAM PROCESSING APPARATUS, AND METHOD OF MANUFACTURING ELECTRON BEAM DETECTOR - There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening. | 03-06-2014 |
20140120475 | ELECTRON BEAM EXPOSURE METHOD - An electron beam exposure method includes the steps of: preparing an exposure mask having a plurality of opening patterns formed by dividing a drawing object pattern into exposable regions; and drawing the drawing object pattern by performing exposure with an electron beam passing through the opening patterns of the exposure mask. Each end portion serving as a joint in each opening pattern of the exposure mask is provided with a joining portion tapered in a width of the opening pattern. The exposure is performed in such a way that portions drawn through adjacent joining portions overlap each other. | 05-01-2014 |
20150200074 | CHARGED PARTICLE BEAM EXPOSURE APPARATUS - Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate. | 07-16-2015 |
20150243482 | ELECTRON BEAM EXPOSURE METHOD - An electron beam exposure method includes the steps of: preparing an exposure mask having a plurality of opening patterns formed by dividing a drawing object pattern into exposable regions; and drawing the drawing object pattern by performing exposure with an electron beam passing through the opening patterns of the exposure mask. Each end portion serving as a joint in each opening pattern of the exposure mask is provided with a joining portion tapered in a width of the opening pattern. The exposure is performed in such a way that portions drawn through adjacent joining portions overlap each other. | 08-27-2015 |
20160133438 | CHARGED PARTICLE BEAM EXPOSURE APPARATUS SUITABLE FOR DRAWING ON LINE PATTERNS, AND EXPOSURE METHOD USING THE SAME - There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region. | 05-12-2016 |