Patent application number | Description | Published |
20120247391 | VERTICAL BATCH-TYPE FILM FORMING APPARATUS - A vertical batch-type film forming apparatus includes: a processing chamber collectively performing a film forming process to a plurality of processing targets; a heating device heating the plurality of processing targets; an exhauster evacuating an inside of the processing chamber; an accommodating container accommodating the processing chamber; a gas supply mechanism supplying a gas used in a process into the accommodating container; and a plurality of gas introducing holes provided in a sidewall of the processing chamber. The gas used in a process is supplied into the processing chamber via the gas introducing holes in a parallel flow to processing surfaces of the plurality of processing targets, and a film forming process is collectively performed to the plurality of processing targets without setting the furnace temperature gradient in the processing chamber. | 10-04-2012 |
20120252224 | METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM, FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron. | 10-04-2012 |
20140004715 | SILICON OXIDE FILM FORMING METHOD AND APPARATUS | 01-02-2014 |
20140080315 | METHOD OF FORMING LAMINATED FILM AND FORMING APPARATUS THEREOF - A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film. | 03-20-2014 |
20140251209 | SUPPORT MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS - A support member includes: a mounting unit having a first main surface and a second main surface, the first main surface being configured to mount a first object to be processed thereon and the second main surface being configured to mount a second object to be processed thereon; and a wall installed in a part of the outer peripheral portion along the outer periphery of the mounting unit, the wall having a first portion protruding in a vertical direction than the first object to be processed mounted on the first main surface of the mounting unit. The inner peripheral surface of the first portion of the wall is formed in a first shape that allows the first object to be processed to be held by the first portion of the wall. | 09-11-2014 |
20140284808 | STACKED SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS OF MANUFACTURING THE SAME - Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching. | 09-25-2014 |
20140308820 | METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron. | 10-16-2014 |