Patent application number | Description | Published |
20080230807 | Semiconductor Device - A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device | 09-25-2008 |
20090102563 | Transimpedance amplifier - The present invention solves characteristic deterioration caused by peaking and a ground inductance, and provides a transimpedance amplifier capable of achieving a higher gain and a wider band. For this purpose, the transimpedance amplifier is configured to include a feedback circuit having two or more extreme frequencies and having a filter characteristic which is flat with respect to frequencies in a frequency region not more than a smallest extreme frequency among the extreme frequencies, which is flat with respect to frequencies in a frequency region not less than a largest extreme frequency among the extreme frequencies, and which has at least one negative inclination portion with respect to frequencies in a frequency region between the smallest and largest extreme frequencies. | 04-23-2009 |
20100007013 | Semiconductor device - A semiconductor device, comprising: a semiconductor element | 01-14-2010 |
20100225399 | POWER AMPLIFIER, AND METHOD OF CONTROLLING POWER AMPLIFIER - A power amplifier of the present invention comprises MOS transistor ( | 09-09-2010 |
20110224964 | SIMULATION DEVICE, SIMULATION METHOD, AND RECORDING MEDIUM STORING PROGRAM - Provided are a device model, a recording medium storing a program, a simulation circuit, device, and method that calculate a local temperature increase in an element. The device model according to the present invention is used for a semiconductor circuit simulation and has at least two model parameters. The model parameters include an electrical model describing temperature characteristics and a thermal model describing thermal characteristics and corresponding to the electrical model. | 09-15-2011 |
20120012995 | Semiconductor device - A semiconductor device includes a semiconductor element having a rectangular two-dimensional geometry and serving as a heat source, a first heat sink section including the semiconductor element mounted thereon, and a second heat sink section joined to an opposite side of the first heat sink section that includes the semiconductor element. A relation among directional components of thermal conductivity is K | 01-19-2012 |
20120241759 | NITRIDE SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A nitride semiconductor device having a high withstand voltage and being capable of reducing a leakage current, is provided. The nitride semiconductor device | 09-27-2012 |
20140339913 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - A wireless power feeding system capable of long distance and highly efficient space transmission of power is provided. A wireless power feeding system includes a power transmitter, a power receiver, and a power receiving body. The power transmitter generates electromagnetic waves. The power receiver is supplied with power by means of the electromagnetic waves received from the power transmitter using a magnetic field resonance phenomenon. The power receiving body is inserted into an electromagnetic field created by the power transmitter and the power receiver, and receives power by means of the electromagnetic field. | 11-20-2014 |