Patent application number | Description | Published |
20080258264 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen. | 10-23-2008 |
20090267134 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film. | 10-29-2009 |
20100052035 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film. | 03-04-2010 |
20100244157 | SEMICONDUCTOR DEVICE - A semiconductor device includes a MISFET comprising: a semiconductor layer including a semiconductor region formed therein; a gate insulating film formed above the semiconductor region, and including a metal oxide layer containing a metal and oxygen, the metal contained in the metal oxide layer being at least one selected from Hf and Zr, the metal oxide layer further including at least one element selected from the group consisting of Ru, Cr, Os, V, Tc, and Nb, the metal oxide layer having sites that capture or release charges formed by inclusion of the element, density of the element in the metal oxide layer being in the range of 1×10 | 09-30-2010 |
Patent application number | Description | Published |
20090102473 | EDDY CURRENT TESTING METHOD AND EDDY CURRENT TESTING APPARATUS - The present invention provides an eddy current testing method and an eddy current testing apparatus that can reduce detection noise to increase the SN ratio thus improving the defect detection accuracy. | 04-23-2009 |
20090120192 | ULTRASONIC TESTING APPARATUS FOR TURBINE FORKS AND METHOD THEREOF - An ultrasonic testing apparatus for a turbine fork of a turbine blade joined to a turbine disc, comprising:
| 05-14-2009 |
20100085042 | EDDY CURRENT TESTING APPARATUS AND EDDY CURRENT TESTING METHOD - The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm. | 04-08-2010 |
20100085043 | EDDY CURRENT TESTING APPARATUS AND EDDY CURRENT TESTING METHOD - The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm. | 04-08-2010 |
20110148404 | METHOD AND APPARATUS FOR EVALUATING LENGTH OF DEFECT IN EDDY CURRENT TESTING - The surface length of a metal subject to be inspected is evaluated by detecting an eddy current without using a combination of a scale and visual or liquid penetrant inspection. An exciting coil and a detecting coil are scanned above the subject in a length direction. An eddy current detector measures an output voltage corresponding to scanning positions based on an output from the detecting coil. Based on an output voltage distribution curve indicating a distribution of output voltages corresponding to the scanning positions, position information is extracted corresponding to values which are within a differential voltage range and lower by 12 dB than a maximum value of the output voltages on the left and right sides of the distribution. A distance between the positions included in the extracted information is calculated to evaluate the length of a slit which is a defect present on the subject surface. | 06-23-2011 |
20110197679 | ULTRASONIC INSPECTION SYSTEM AND ULTRASONIC INSPECTION METHOD - In an ultrasonic inspection method or ultrasonic inspection system in which an ultrasonic wave is propagated to an test object via a medium such as a liquid or a gas, an incident position of the ultrasonic wave is accurately and reliably identified. In an ultrasonic inspection method based on an immersion technique, an optical irradiator is mounted on an ultrasonic wave transmitting/receiving unit, an optical marker is irradiated from the optical irradiator to the test object, and an irradiated position of the optical marker is imaged using imaging equipment in order to perform inspection. | 08-18-2011 |
20120216382 | METHOD OF INSTALLING JET PUMP BEAM - A method of installing a jet pump beam includes, disposing an inlet mixer having one end portion inserted to a diffuser provided in a reactor pressure vessel and an other end portion communicated with a riser pipe disposed in the reactor pressure vessel between a pair of projecting portions of a transition piece provided to the riser pipe, separately inserting both end portions of a jet pump beam disposed above the inlet mixer into a groove formed in each of the pair of projecting portions, arching the jet pump beam by moving a center portion of the jet pump beam upward, pushing a screw member engaged with the arched jet pump beam against the inlet mixer, and measuring deflection amount of the arched jet pump beam when the screw member is being pushed against the inlet mixer. | 08-30-2012 |
20120281800 | Method of Checking Installed State of Jet Pump Beam - A jet pump beam (hereinafter, referred to as a beam) is fitted into a pair of projecting portions installed to a transition piece, and after the beam is arched, a beam bolt engaged with the beam is tightened. An end of the beam bolt comes in contact with a top surface of an insert member fitted into an elbow disposed between the pair of projecting portions. An ultrasonic sensor head is fixed to the beam bolt, and ultrasonic waves are sent to the beam bolt from the ultrasonic sensor in the ultrasonic sensor head. An ultrasonic measuring apparatus obtains echo intensity of each of reflected waves generated at the end of the beam bolt and a bottom surface of the insert member, and based on the echo intensities, an echo intensity ratio R is calculated. The installed state of the beam is checked using the echo intensity ratio R. | 11-08-2012 |
20120291554 | Heat-Resistant Ultrasonic Sensor and Installation Method Thereof - A heat-resistant ultrasonic sensor forms a piezo-electric ceramics film with a thickness of 0.5 mm or smaller and a Curie point of 200° C. or higher on a flexible metal plate. A thin metal film that is an electrode is attached to a top surface of the piezo-electric ceramics film and a metal wire mesh covers the thin metal film and is attached to a top surface of the thin metal film. A core of a heat-resistant coaxial cable is connected to the metal wire mesh at a connection point. The heat-resistant coaxial cable is fixed to the thin metal plate with a metal fixing member that is a ground portion. An electric insulating cover is attached to the thin metal plate and covers the piezo-electric ceramics film, the thin metal film, the metal wire mesh, the connection point, the fixing member, and the core of the coaxial cable. | 11-22-2012 |