Patent application number | Description | Published |
20080296609 | Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same - A substrate | 12-04-2008 |
20080303043 | SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers. | 12-11-2008 |
20090042328 | SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers. | 02-12-2009 |
20100264445 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100264446 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100264447 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100266815 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100267181 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100320479 | LIGHT EMITTING APPARATUS AND METHOD FOR PRODUCING THE SAME - A light emitting apparatus and a production method of the apparatus are provided that can emit light with less color unevenness at high luminance. The apparatus includes a light emitting device, a transparent member receiving incident light emitted from the device, and a covering member. The transparent member is formed of an inorganic material light conversion member including an externally exposed emission surface, and a side surface contiguous to the emission surface. The covering member contains a reflective material, and covers at least the side surfaces of the transparent member. Substantially only the emission surface serves as the emission area of the apparatus. It is possible to provide emitted light having excellent directivity and luminance. Emitted light can be easily optically controlled. In the case where each light emitting apparatus is used as a unit light source, the apparatus has high secondary usability. | 12-23-2010 |
20110233596 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers. | 09-29-2011 |
20120181572 | SEMICONDUCTOR LIGHT EMITTING DEVICE - An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. | 07-19-2012 |
20120256221 | LIFE-IMPROVED SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer | 10-11-2012 |
20130122620 | METHOD OF FORMING LIGHT CONVERTING LAYER, METHOD OF MANUFACTURING LIGHT CONVERTING MEMBER, AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided Is a method of forming a light converting layer capable of uniformly distributing fluorescent material particles, a method of manufacturing a light converting member capable of distributing fluorescent material particles, and a method of manufacturing a light emitting device capable of controlling color irregularities. The method of forming a light converting member comprising steps of, preparing fluorescent material particles, forming a bonding layer made of a resin on a base body; incorporating the fluorescent material particles in the bonding layer; and hardening the bonding layer. | 05-16-2013 |
20130183496 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 07-18-2013 |
20140299974 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-09-2014 |
20140322844 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - Provided is a method for manufacturing a light emitting device comprising a light emitting element and an optical part, the method comprising the steps of (i) forming a hydroxyl film on a bonding surface of each of the light emitting element and the optical part by an atomic layer deposition, and (ii) bonding the bonding surfaces of the light emitting element and the optical part with each other, each of the bonding surfaces having the hydroxyl film formed thereon, wherein a substep is repeated at least one time in the step (i), in which substep a first raw material gas and a second raw material gas are sequentially supplied onto the bonding surfaces of the light emitting element and the optical part, and wherein the bonding of the bonding surfaces in the step (ii) is performed without a heating treatment. | 10-30-2014 |