Patent application number | Description | Published |
20090041270 | Mems Microphone And Method For Producing Said Microphone - An MEMS microphone is bonded onto the surface of an IC component containing at least one integrated circuit suitable for the conditioning and processing of the electrical signal supplied by the MEMS microphone. The entire component is simple to produce and has a compact and space-saving construction. Production is accomplished in a simple and reliable manner. | 02-12-2009 |
20090098718 | Multiple mask and method for producing differently doped regions - In order to produce doping regions (DG) in a substrate (S) having different dopings with the aid of a single mask (DM) different mask regions are provided which have elongated mask openings (MO) having different orientations relative to the spatial direction of an oblique implantation. The substrate is rotated between the first and second oblique implantations, wherein during the first oblique implantation maximum and minimum shadings in the different mask regions are opposite one another and the conditions are precisely reversed during the second oblique implantation after the rotation of the substrate. | 04-16-2009 |
20090273030 | Semiconductor Device with a Trench Isolation and Method of Manufacturing Trenches in a Semiconductor Body - A low cost integration method for a plurality of deep isolation trenches on the same chip is provided. The trenches have an additional n-type or p-type doped region surrounding the trench—silicon interface. Providing such variations of doping the trench interface is achieved by using implantation masking layers or doped glass films structured by a simple resist mask. By simple layout variation of the top dimension of the trench various trench depths at the same time can be ensured. Using this method, wider trenches will be deeper and smaller trenches will be shallower. | 11-05-2009 |
20100144114 | Method for Producing a Semiconductor Component with Two Trenches - A method, in which a first isolating trench, filled with a dielectric material, and a second conducting trench, filled with an electrically conductive material, can be produced. To this end, the first and second trenches are etched with different trench widths, so that the first trench is filled completely with the dielectric material after a deposition of a dielectric layer over the entire surface with the edges covered, whereas the wider second trench is covered by the dielectric layer only on the inside walls. By anisotropic back-etching of the dielectric layer, the semiconductor substrate is exposed at the bottom of the second trench. Subsequently, the second trench is filled with an electrically conductive material and then represents a low-ohmic connection from the substrate surface to the buried structure located below the second trench. | 06-10-2010 |
20100314762 | Semiconductor Substrate with Through-Contact and Method for Production Thereof - The interlayer connection of the substrate is formed by a contact-hole filling ( | 12-16-2010 |
20110050210 | Vertical Hall Sensor and Method for Manufacturing a Vertical Hall Sensor | 03-03-2011 |
20140038410 | METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING AN INTERCONNECT THROUGH THE SUBSTRATE - A semiconductor substrate ( | 02-06-2014 |
20140191413 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE COMPRISING A CONDUCTOR LAYER IN THE SEMICONDUCTOR BODY AND SEMICONDUCTOR BODY | 07-10-2014 |
20140339698 | SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL AND RELATED METHOD OF PRODUCTION - The semiconductor device comprises a semiconductor substrate ( | 11-20-2014 |