Patent application number | Description | Published |
20090241995 | SUBSTRATE CLEANING METHOD AND APPARATUS - In a method of removing a film residue from a wafer in a substrate processing system, a surface of the wafer is exposed to a processing liquid to thereby lift a first portion of the film residue off the surface of the wafer. In addition, a continuous or pulsed stream of pressurized gas is applied against the surface of the wafer to remove a second portion of the film residue from the wafer. The method may include rotating the wafer relative to the stream of pressurized gas. The stream of pressurized gas may be applied subsequent to exposing the surface of the wafer to the processing liquid and any residual processing liquid may be removed with the second portion of film residue by the stream of pressurized gas. Alternatively, the stream of pressurized gas may be applied concurrently with the processing liquid to remove the film residue and processing liquid in a single step. In an embodiment of an apparatus for removing film residue, a liquid dispensing device and a pressurized gas dispensing device cooperate to apply processing liquid and pressurized gas, concurrently or sequentially, to a substrate surface. | 10-01-2009 |
20090246718 | METHOD OF CREATING A GRADED ANTI-REFLECTIVE COATING - A method of creating a graded anti-reflective coating (ARC) layer on a thin film is described. The method includes forming the thin film on a substrate, forming an ARC layer on the thin film, and applying a solvent to the ARC layer causing it to swell. A photo-resist layer is formed on the swollen ARC layer. A mixing layer is formed by the diffusion of components from the swollen ARC layer to the photo-resist layer and vice versa. The mixing layer has optical qualities that are distinct from those of either of the ARC layer or the photo-resist layer. The mixing layer forms the graded ARC layer. | 10-01-2009 |
20110205505 | LINE PATTERN COLLAPSE MITIGATION THROUGH GAP-FILL MATERIAL APPLICATION - Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching. | 08-25-2011 |
20110244391 | COMPOSITION AND METHOD FOR REDUCING PATTERN COLLAPSE - A radiation-sensitive composition and method for using the composition to reduce the probability of pattern collapse is provided. The radiation-sensitive composition includes a bulk matrix of radiation-sensitive material with a base-reactive, surface-modifying agent dispersed throughout the matrix. The base-reactive, surface-modifying agent is reactive to hydroxide and increases the surface hydrophobicity of a pattern formed in a layer of the radiation-sensitive composition upon treatment with a basic developing solution during lithographic processing of a substrate. | 10-06-2011 |
20110244402 | METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS - A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines. | 10-06-2011 |
20110244403 | METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS - A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then developed to remove either a region having high radiation exposure or a region having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines. | 10-06-2011 |
20110269078 | SUBSTRATE TREATMENT TO REDUCE PATTERN ROUGHNESS - A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface | 11-03-2011 |
20130107237 | METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS | 05-02-2013 |
20130309457 | METHOD OF FORMING PATTERNS USING BLOCK COPOLYMERS AND ARTICLES THEREOF - A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures. | 11-21-2013 |
20140272723 | CHEMI-EPITAXY IN DIRECTED SELF-ASSEMBLY APPLICATIONS USING PHOTO-DECOMPOSABLE AGENTS - A method of forming a layered substrate comprising a self-assembled material is provided. The method includes forming a first layer of material on a substrate, forming a layer of a radiation sensitive material on the first layer of material, imaging the layer of the radiation sensitive material with patterned light, heating the layer of the radiation sensitive material to a temperature at or above the cross-linking reaction temperature, developing the imaged layer, and forming the block copolymer pattern. The radiation sensitive material comprises at least one photo-sensitive component selected from (a) a photo-decomposable cross-linking agent, (b) a photo-base generator, or (c) a photo-decomposable base; and a cross-linkable polymer, wherein imaging by the patterned light provides a pattern defined by a first region having substantial portions of a decomposed photo-sensitive component surrounded by regions having substantial portions of intact photo-sensitive component. | 09-18-2014 |
20140273290 | SOLVENT ANNEAL PROCESSING FOR DIRECTED-SELF ASSEMBLY APPLICATIONS - A method and apparatus for solvent annealing a layered substrate including a layer of a block copolymer are provided. The method includes (a) introducing an annealing gas into a processing chamber; (b) maintaining the annealing gas in the processing chamber for a first time period; (c) removing the annealing gas from the processing chamber; and (d) repeating steps (a)-(c) a plurality of times in order induce the block copolymer to undergo cyclic self-assembly. The apparatus includes a processing chamber comprising a process space; a substrate support in the process space; an annealing gas supply and a purge gas supply, both in fluid communication with the process space; a heating element positioned within the processing chamber; an exhaust port in the processing chamber; and a sequencing device programmed to control the annealing gas supply, the heating element, the isolation valve of the exhaust port, and the purge gas supply. | 09-18-2014 |
20140273472 | TRACK PROCESSING TO REMOVE ORGANIC FILMS IN DIRECTED SELF-ASSEMBLY CHEMO-EPITAXY APPLICATIONS - A method is provided for preparing a prepatterned substrate for use in DSA integration. In one example, the method includes removing a radiation-sensitive material pattern overlying a patterned cross-linked polystyrene copolymer layer by a) exposure to a solvent vapor, b) exposure to a liquid solvent, and c) repeating steps a)-b) until the radiation-sensitive material pattern is completely removed. In another example, the method includes removing a neutral layer by affecting removal of an underlying patterned radiation-sensitive material layer, which includes swelling the neutral layer; and removing the radiation-sensitive material pattern and the swollen neutral layer in portions by exposing the swollen layer and pattern to a developer solution. Swelling the neutral layer includes a) exposure to a solvent vapor; b) exposure to a liquid solvent; and c) repeating steps a)-b) until the neutral layer is sufficiently swollen to allow penetration of the developing solution through the swollen neutral layer. | 09-18-2014 |
20140273514 | TOPOGRAPHY MINIMIZATION OF NEUTRAL LAYER OVERCOATS IN DIRECTED SELF-ASSEMBLY APPLICATIONS - A method is provided for patterning a layered substrate that includes loading a substrate into a coater-developer processing system; coating the substrate with a photoresist material layer; patterning the photoresist material layer to form a photoresist pattern; transferring the substrate to a deposition processing system; and depositing a neutral layer over the photoresist pattern and exposed portions of the substrate. The neutral layer can deposited using a gas cluster ion beam (GCIB) process, or an atomic layer deposition (ALD) process, which has minimal topography. The method may further include lifting off a portion of the neutral layer deposited over the photoresist pattern to expose a neutral layer template for subsequent directed self-assembly (DSA) patterning; depositing a DSA material layer over the neutral layer template; baking the DSA material layer to form a DSA pattern; and developing the DSA material layer to expose the final DSA pattern for subsequent feature etching. | 09-18-2014 |
20140273534 | INTEGRATION OF ABSORPTION BASED HEATING BAKE METHODS INTO A PHOTOLITHOGRAPHY TRACK SYSTEM - A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate; and annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed by application of an absorption based heating method. Exemplary absorption based heating methods include electromagnetic radiation sources such as broadband flash lamps, light emitting diodes, lasers, or DUV flash lamps. The method may also include a metrology review and an application of the absorption based heating to at least a portion of the layered substrate to refine or modify the microphase segregation. | 09-18-2014 |
20140291878 | METHODS FOR CONTROLLING ACROSS-WAFER DIRECTED SELF-ASSEMBLY - A method for treating a layered substrate including a layer of a block copolymer is provided. The method includes identifying a non-uniformity in the layer of the block copolymer; controlling a process variable correlated to the non-uniformity in the layer of the block copolymer; and annealing the layer of the block copolymer under a process condition affected by the process variable to compensate for at least a portion of the non-uniformity in the layer of the block copolymer to form a pattern comprising a plurality of domains having improved uniformity therein. The method further provides a way for reducing a non-uniformity in a layered substrate comprising a layer of a block copolymer on a pre-patterned substrate. | 10-02-2014 |