Mardilovich
Anastasia Mardilovich, Minneapolis, MN US
Patent application number | Description | Published |
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20090280165 | COMPOUNDS THAT BIND ALPHA5BETA1 INTEGRIN AND METHODS OF USE - The present invention provides biologically active compounds that bind an αsβi integrin. Also included in the present invention are methods for using such biologically active compounds. | 11-12-2009 |
Ivan P. Mardilovich, Worcester, MA US
Patent application number | Description | Published |
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20100132546 | Composite Structures with Porous Anodic Oxide Layers and Methods of Fabrication - Composite structures are described that have a porous anodic oxide layer such as, for example, a porous anodic aluminum oxide layer. In one aspect, the present invention includes a composite gas separation module having a porous metal substrate; a porous anodic aluminum oxide layer, wherein the porous anodic aluminum oxide layer overlies the porous metal substrate; and a dense gas-selective membrane, wherein the dense gas-selective membrane overlies the porous anodic aluminum oxide layer. A composite filter is described having a porous non-aluminum metal substrate; and a porous anodic aluminum oxide layer, wherein the porous anodic aluminum oxide layer defines pores extending through the porous anodic aluminum oxide layer. Methods for fabricating composite gas separation modules and composite filters and methods for selectively separating hydrogen gas from a hydrogen gas-containing gaseous stream are also described. | 06-03-2010 |
Peter P. Mardilovich, Corvallis, OR US
Patent application number | Description | Published |
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20080254569 | Semiconductor Device - One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium. | 10-16-2008 |
20100078634 | SEMICONDUCTOR DEVICE - One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead. | 04-01-2010 |
20100219411 | SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL - A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc. | 09-02-2010 |
20120208318 | SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL - A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc. | 08-16-2012 |