Patent application number | Description | Published |
20110044004 | HEAT TRANSFER APPARATUS HAVING A THERMAL INTERFACE MATERIAL - A heat-transfer apparatus includes a heat-producing body, a heat sink adjacent to the heat-producing body, and a thermal interface material that includes a plurality of heat-transfer particles bridging the heat-producing body and the heat sink. | 02-24-2011 |
20110210416 | POLARIZATION ALIGNED AND POLARIZATION GRADED THERMOELECTRIC MATERIALS AND METHOD OF FORMING THEREOF - Exemplary embodiments of the invention include a thermoelectric material having an aligned polarization field along a central axis of the material. Along the axis are a first atomic plane and a second atomic plane of substantially similar area. The planes define a first volume and form a single anisotropic crystal. The first volume has a first outer surface and a second outer surface opposite the first outer surface, with the outer surfaces defining the central axis passing through a bulk. The bulk polarization field is formed from a first electrical sheet charge and a second opposing electrical sheet charge, one on each atomic plane. The opposing sheet charges define a bulk polarization field aligned with the central axis, and the bulk polarization field causes asymmetric thermal and electrical conductivity through the first volume along the central axis. | 09-01-2011 |
20110248210 | Bulk-Processed, Enhanced Figure-Of-Merit Thermoelectric Materials - The invention is a bulk-processed thermoelectric material and a method for fabrication. The material measures at least 30 microns in each dimension and has a figure of merit (ZT) greater than 1.0 at any temperature less than 200° C. The material comprises at least two constituents; a host phase and a dispersed second phase. The host phase is a semiconductor or semimetal and the dispersed phase of the bulk-processed material is comprised of a plurality of inclusions. The material has a substantially coherent interface between the host phase and the dispersed phase in at least one crystallographic direction. | 10-13-2011 |
20120263971 | BASE METAL ALLOYS WITH IMPROVED CONDUCTIVE PROPERTIES, METHODS OF MANUFACTURE, AND USES THEREOF - A composition comprises a binary alloy of iron and one of manganese, molybdenum, or vanadium, wherein the manganese, molybdenum, or vanadium is present in the binary alloy in an amount effective to form a conductive oxide on the binary alloy, the oxidation state of the manganese, the molybdenum, and the vanadium is greater than the oxidation state of iron in the conductive oxide, and the conductive oxide has a contact resistance of less than 5×10 | 10-18-2012 |
20130084179 | VARIABLE VANE ANGULAR POSITION SENSOR - A variable vane control system for use with a gas turbine engine includes an actuator, a mechanical linkage assembly, and a vane position sensor. The gas turbine engine has a plurality of variable vanes each having an airfoil disposed in a gas flow path of the gas turbine engine. The plurality of variable vanes includes a first variable vane. The mechanical linkage assembly operably connects the actuator to at least the first variable vane. The vane position sensor is connected to one of the first variable vane or a portion of the mechanical linkage assembly proximate the first variable vane for sensing angular position of the first variable vane. | 04-04-2013 |
20130168781 | TWO-WAFER MEMS IONIZATION DEVICE - A microelectromechanical system (MEMS) assembly includes at least one emission source; a top wafer having a plurality of side walls and a generally horizontal portion, the horizontal portion having a thickness between a first side and a directly opposed second side, at least one window in the horizontal portion extending between the first and second sides and a transmission membrane across the at least one window; and a bottom wafer having a first portion with a first substantially planar surface, an intermediate surface directly opposed to the first substantially planar surface, a second portion with a second substantially planar surface, the at least one emission source provided on the second substantially planar surface; where the top wafer bonds to the bottom wafer at the intermediate surface and encloses a cavity within the top wafer and the bottom wafer. | 07-04-2013 |
20130270446 | IONIZATION WINDOW - An exemplary ionization window assembly includes a support layer having a thickness between a first side and a second side. There is at least one opening in the support layer extending between the first and second sides. The opening has a first width dimension near the first side of the support layer and a second, larger width dimension near the second side of the support layer. A window layer is supported on the second side of the support layer. The window layer extends across the opening to allow ionizing radiation to pass through the opening in a direction from the first side toward the second side. | 10-17-2013 |
20130277567 | IONIZATION DEVICE - An exemplary ionization device includes a pyroelectric electron accelerator that causes electrons to move away from the accelerator. A silicon target is positioned in a path of the electrons. X-ray radiation results from the electrons colliding with the target. | 10-24-2013 |
20130293870 | DETECTOR HAVING A SINGLE SOURCE FOR IONIZATION AND PHOTO DETECTION - An exemplary detector includes a source of radiation. A detection chamber is configured to at least temporarily contain a fluid. At least some of the radiation ionizes at least some of the fluid. At least some of the radiation produces light in the detection chamber. An ionization sensor provides an output corresponding to an amount of fluid ionization in the detection chamber. A light sensor provides an output corresponding to an amount of the light detected by the light sensor. | 11-07-2013 |
20140034909 | THIN-FILM BALLISTIC SEMICONDUCTOR WITH ASYMMETRIC CONDUCTANCE - A thermoelectric structure comprises a thin thermoelectric film extending in a plane between parallel first and second shorting bars. A plurality of curved ballistic scattering guides are formed in a magnetic field region of the thin thermoelectric film subjected to a local, substantially uniform, nonzero magnetic field normal to the plane of the thin thermoelectric film. | 02-06-2014 |
20140077083 | METHOD AND METER FOR DETERMINING GAS QUALITY - An example method of detecting components of a gas includes detecting substantially all components of a gas using distinct infrared wavelengths within a portion of the infrared spectrum, the portion being less than the entire infrared spectrum. | 03-20-2014 |
20140216513 | HIGH ZT THERMOELECTRIC WITH REVERSIBLE JUNCTION - A composite structure with tailored anisotropic energy flow is described. The structure consists of an array of two-dimensional electrodes with anisotropic geometrical shapes on a semiconductor or semimetal layer that in turn is on a metal baselayer. An applied voltage between the two-dimensional electrode array and the baselayer renders the regions under the electrodes insulating such that the anisotropic regions interact with energy flow in the semiconductor or semimetal layer. Depending on the orientation of the anisotropic insulating regions with respect to the principal direction of energy flow, the energy flow in the semiconductor or semimetal layer is greater in a principal direction and is lower in an opposite direction. | 08-07-2014 |
20150027906 | SOLID POLYMER ELECTROLYTE AMMONIA SENSOR - An ammonia sensor that includes an ionic liquid impregnated sensing electrode (anode) and a cathode separated by a membrane. During operation, in the presence of ammonia, the anode and cathode generate current manifesting the electrochemical reaction of ammonia in the sensing electrode. Ionic liquids distributed in the ionomer film in the gas diffusion electrodes ensure the reactivity under wide range of environment conditions while maintaining the ability of the device to quantify ammonia concentration in the environment. The sensor can therefore sustain long time operation without internal humidification due to the non-volatility of the ionic liquids. | 01-29-2015 |