Patent application number | Description | Published |
20080231733 | Amplification Type Solid State Imaging Device - An amplification type solid state imaging device in use includes at least a light-receiving portion | 09-25-2008 |
20090021620 | AMPLIFICATION TYPE SOLID-STATE IMAGING DEVICE - A plurality of pixels, each including a second conductivity-type photodiode portion | 01-22-2009 |
20090021625 | Solid-State Imaging Device - According to the present invention, as a structure of a pixel section ( | 01-22-2009 |
20090026571 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes first pixels and second pixels. Each of the first pixels and the second pixels includes a p-type diffusion layer formed in a semiconductor substrate and an n-type diffusion layer formed on the p-type diffusion layer. A first p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the first pixels. A second p-type implantation layer having a lower impurity concentration than the first p-type implantation layer or no p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the second pixels. | 01-29-2009 |
20100245642 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device which can, in response to the problem of black-crush occurring in an image when strong light is enters the device, positively detect black-crush in a state in which a variance margin has been secured. The solid-state imaging device outputs a luminance signal in accordance with an amount of received light, and includes: a pixel circuit having a light-receiving element; a signal output circuit having a sampling transistor which outputs, from a second signal output line, a luminance signal in accordance with the amount of light received by the light-receiving element, based on an output signal from the pixel circuit; and a high-intensity judgment circuit which is coupled by the pixel circuit and a judgment input coupling capacitor, judges whether or not light entering the light-receiving element is of high intensity based on the output signal from the pixel circuit, and in the case of judging the entering light to be of high intensity, outputs a luminance signal indicating high intensity. | 09-30-2010 |
20100309355 | AMPLIFICATION TYPE SOLID STATE IMAGING DEVICE - An amplification type solid state imaging device in use includes at least a light-receiving portion | 12-09-2010 |
20100309356 | SOLID STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME - A solid state imaging device according to an aspect of the present invention includes: a pixel array ( | 12-09-2010 |